PESD15VL1BA

www.msksemi.com PESDXXXL1BA Semiconductor Compiance Mechanical Characteristics  Package: SOD-323   Lead Finish: Matte Tin Case Material: “Green” Molding Compound.   UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J-STD-020   Terminal Connections: See Diagram Below Marking Information: See Below Applications SOT-23   Cellular Handsets and Accessories Personal Digital Assistants   Notebooks and Handhelds Portable Instrumentation  Peripherals   Pagers Peripherals Desktop and Servers Features  500W peak pulse power (8/20µs) Protects one data or power line  Ultra low leakage: nA level   Operating voltage:3.3V, 5V, 12V,15, 24V Ultra low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns)  RoHS Compliant  Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Peak Pulse Power (8/20µs) ESD per IEC 61000−4−2 (Air) ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range Symbol Value Unit Ppk 500 W VESD ±30 ±30 kV TJ −55 to +125 °C Tstg −55 to +150 °C www.msksemi.com PESDXXXL1BA Semiconductor Compiance Electrical Characteristics (TA=25°C unless otherwise specified) PESD3V3L1BA Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ 3.3 VRWM VBR Max 4 Unit Test Condition V V IT = 1mA Reverse Leakage Current IR Clamping Voltage VC 5 V IPP = 5A (8 x 20µs pulse) Clamping Voltage VC 10 V IPP = 36A (8 x 20µs pulse) Peak Pulse Current Ipp 18 A tp = 8/20µs Junction Capacitance CJ 200 pF VR = 0V, f = 1MHz Max Unit Test Condition 5 V 0.5 µA VRWM = 5V PESD5V0L1BA Parameter Reverse Working Voltage Breakdown Voltage Symbol Min VRWM VBR Typ 8.5 V IT = 1mA Reverse Leakage Current IR 1 µA VRWM = 8V Clamping Voltage VC 11 V IPP = 5A (8 x 20µs pulse) Clamping Voltage VC 15 V IPP = 34A (8 x 20µs pulse) Peak Pulse Current Ipp 15 A tp = 8/20µs Junction Capacitance CJ 180 pF VR = 0V, f = 1MHz www.msksemi.com PESDXXXL1BA Semiconductor Compiance PESD12VL1BA Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 12 V 13.3 Test Condition V IT = 1mA Reverse Leakage Current IR 0.5 µA VRWM = 12V Clamping Voltage VC 19 V IPP = 5A (8 x 20µs pulse) Clamping Voltage VC 28 V IPP = 18A (8 x 20µs pulse) Peak Pulse Current Ipp 10 A tp = 8/20µs Junction Capacitance CJ 100 pF VR = 0V, f = 1MHz Max Unit 15 V PESD15VL1BA Parameter Reverse Working Voltage Breakdown Voltage Symbol Min VRWM VBR Typ 16.7 Test Condition V IT = 1mA Reverse Leakage Current IR 0.5 µA VRWM = 12V Clamping Voltage VC 19 V IPP = 5A (8 x 20µs pulse) Clamping Voltage VC 28 V IPP = 18A (8 x 20µs pulse) Peak Pulse Current Ipp 10 A tp = 8/20µs Junction Capacitance CJ 100 pF VR = 0V, f = 1MHz www.msksemi.com PESDXXXL1BA Semiconductor Compiance PESD24VL1BA Parameter Symbol Reverse Working Voltage Breakdown Voltage Min Typ VRWM VBR Max Unit 24 V 27 Test Condition V IT = 1mA Reverse Leakage Current IR 0.2 µA VRWM = 24V Clamping Voltage VC 40 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 62 V IPP = 8A (8 x 20µs pulse) Peak Pulse Current Ipp 5 A tp = 8/20µs Junction Capacitance CJ 50 pF VR = 0V, f = 1MHz Typical Performance Characteristics (TA=25°C unless otherwise Specified) 120 10 % of Rated Power Peak Power_Ppp(W) 100 1 0.1 80 60 40 20 0 0.01 0.1 1 10 100 1000 Pulse Duration_tp(uS) 0 25 50 75 100 125 Ambient Temperature_Ta(℃) 150 Power Derating Curve Peak Pulse Power vs. Pulse Time 100 % of Peak Pulse Current 90 80 70 60 50 40 30 20 10 0 0 20 40 Time_t(uS) 60 80 8 X 20uS Pulse Waveform www.msksemi.com PESDXXXL1BA Semiconductor Compiance PACKAGE MECHANICAL DATA REEL SPECIFICATION P/N PESDXXXL1BA PKG SOD-323 QTY 3000 www.msksemi.com PESDXXXL1BA Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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