ESDA6V1L

www.msksemi.com ESDA6V1L Semiconductor Compiance Features SOT-23 ■ 150 Watts peak pulse power (tp =8/20μs) ■ Bidirectional and unidirectionalconfigurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ Low capacitance (Cj=100 pF typ.) ■ Protection two data lines ■ IEC 61000-4-2 ±20kV contact ±15kV air ■ IEC 61000-4-4 (EFT) 40A(5/50ns) ■ IEC 61000-4-5 (Lightning) 10A(8/20μs) 3 Mechanical Data 1 2 3 1 ■ SOT-23 package ■ Molding compound flammability rating: UL 94V-0 ■ Packaging: Tape and Reel ■ RoHS/WEEE Compliant Applications 2 ■ Dataline ■ Automatic Teller Machines ■ Net works ■ Power line www.msksemi.com ESDA6V1L Semiconductor Compiance Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 150 Watts Peak Pulse Current ( tp =8/20μs )(note1) Ipp 10 A VESD 20 15 kV Lead SolderingTemperature TL 260(10seconds) ℃ JunctionTemperature TJ -55 to + 125 ℃ StorageTemperature Tstg -55 to + 125 ℃ ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2 (Contact) Electrical Characteristics Parameter Symbol Reverse Stand-OffVoltage Conditions Min Typical VRWM Max Units 5 V VBR IT=1mA Reverse LeakageCurrent IR VRWM=5V,T=25℃ 1 μA Peak Pulse Current IPP tp =8/20μs 10 A IPP=1A,tp=8/20μs 10 VC V Clamping Voltage IPP=10A,tp=8/20μs 15 V Reverse BreakdownVoltage Cj JunctionCapacitance 6.0 VR = 0V, f =1MHz (pin1、pin2 to pin3) V 100 pF Electrical Parameters (TA = 25°C unless otherwisenoted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRW M IR VBR IT I IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRW M Breakdown Voltage @ IT VC VBR VRWM IR V F IT V Test Current IPP Note:. 8/20μs pulsewaveform. www.msksemi.com ESDA6V1L Semiconductor Compiance Figure 1: Peak Pulse Power vs. Pulse Time Figure 2: Power Derating Curve 10 110 100 Percent of Rated Power for Ipp P pp – Peak Pulse Power - Ppp(KW) TypicalCharacteristics 150w 8/20μs waveform 1 0.1 0.01 0.1 1 10 100 90 80 70 60 50 40 30 20 10 0 1,000 td – Pulse Duration - µs 90 Ipp 80 e-1 Percent 50 40 30 td=Ipp/ 2 10 8 6 4 Time (µs) 20 25 30 Test Waveform Paramters tr=8µs td=20µs 12 2 15 150 14 0 10 125 16 10 5 100 18 Clamping Voltage–VC (V) 100 0 75 20 Waveform Paramters tr=8µs td=20µs 20 50 Figure 4: Clamping Voltage vs.Ipp 110 60 25 Ambient Temperature - TA (℃) Figure3: Pulse Waveform 70 0 0 1 2 3 4 5 6 Peak Pulse Current–IPP (A) www.msksemi.com ESDA6V1L Semiconductor Compiance PACKAGE MECHANICAL DATA Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° REEL SPECIFICATION P/N ESDA6V1L PKG QTY SOT-23 3000 www.msksemi.com ESDA6V1L Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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