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ESD3V3U4ULC-MS

ESD3V3U4ULC-MS

  • 厂商:

    MSKSEMI(美森科)

  • 封装:

    DFN10_2.5X1MM

  • 描述:

    DFN10 3.3V 150W IPP:5A

  • 数据手册
  • 价格&库存
ESD3V3U4ULC-MS 数据手册
www.msksemi.com ESD3V3U4ULC-MS Semiconductor  Solid-state silicon-avalanche technology  Low operating and clamping voltage  Up to four I/O Lines of Protection  Ultra low capacitance: 0.5pF typical(I/O to I/O)  Low Leakage  Low operating voltage:3.3V  Flow-Through design Compiance DFN10 10 9 8 7 6 1 2 3 4 5 IEC COMPATIBILITY (EN61000-4)  IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)  IEC 61000-4-4 (EFT) 40A (5/50ns)  IEC 61000-4-5 (Lightning) 5A (8/20μs) Schematic & PIN Configuration Mechanical Characteristics   Molding compound flammability rating: UL 94V-0  Marking: Marking Code  Packaging: Tape and Reel  RoHS/WEEE Compliant Pin Identificaion 1,2,4,5 Input Lines 6,7,9,10 Output Lines (No Internal Connection) 3,8 Ground Circuit Diagram Applications  Digital Visual Interface(DVI)  MDDI Ports  DisplayPortTM Interface  PCI Express  High Definition Multi-Media Interface(HDMI)  eSATA Interfaces Pin1 Pin 2 Pin 4 Pin 5 3 ,8 4-Line Protection www.msksemi.com ESD3V3U4ULC-MS Semiconductor Rating Compiance Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 150 Watts Peak Pulse Current ( tp =8/20μs ) Ipp 5 A ESD per IEC 61000-4-2(Air) +/-17 VESD ESD per IEC 61000-4-2(contact) Operating Temperature Storage Temperature kV +/-12 TJ -55 to + 125 °C TSTG -55 to +150 °C Electrical Parameters (T=25°C ) Symbol I Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VCVBRVRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF V IR V F IT IPP Electrical Characteristics Parameter Symbol Conditions Minimum Typical Maximum Units 3.3 V VRWM Any I/O pin to ground VBR It = 1mA Any I/O pin to ground Reverse Leakage Current IR VRWM = 5V, T=25°C Any I/O pin to ground 1 µA Clamping Voltage Vc Ipp=5A, tp=8/20µs Any I/O pin to ground 15 V VR = 0V, f = 1MHz I/O pin to GND 0.8 pF Reverse Stand-Off Voltage Reverse Breakdown Voltage Junction Capacitance Cj VR = 0V, f = 1MHz Between I/O pins 6.0 V 0.3 pF www.msksemi.com ESD3V3U4ULC-MS Semiconductor Compiance Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating curve 110 100 1 % of Rated Power or IPP Peak Pulse Power - Ppp (KW) 10 150W 8/20µs Waveform 0.1 90 80 70 60 50 40 30 20 10 0.01 0 0.1 1 100 10 25 0 1000 110 40 Waveform Parameters: tr=8us td=20us 90 80 35 Clamping Voltage - Vc(V) 100 Percent of Ipp 150 Clamping Voltage vs.Peak Pulse Current Pulse Waveform 70 e-t 60 50 40 30 Td=IPP/2 20 10 0 5 125 100 Ambient Temperature - TA( ℃ ) Pulse Duration - tp (us) 0 75 50 10 25 20 15 30 Line to Line 25 Line to Gnd 20 15 Waveform parameters: tr=8us td=20us 10 5 30 0 0 1 2 Time (us) 3 4 5 6 Peak Pulse Current - Ipp (A) Normalized Capacitance vs. Reverse Voltage Insertion Loss S21 - I/O to GND C ( VR) / CJ ( VR = 0 ) CH1S21 LOG 6dB / REF 0 dB 1: -0.086 dB 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 900 MHz 3 0 - 6dB - 12dB - 18dB - 1 2 2: -0.0336dB 1.8 GHz 3: -0.126dB 2.5GHz 24dB F=1MHz 0 1 2 3 Reverse voltage - VR (V) 4 5 - 30dB - 36dB - 42dB - 48dB 1 MHz STAR .030MHz 10 MHz 100 MHz 1 3 GHz GHz STOP 3000.000000MHz www.msksemi.com ESD3V3U4ULC-MS Semiconductor Compiance PACKAGE MECHANICAL DATA A A b1xN bbb 1 E/2 C A1 R0.125 E C A B 2 DIMENSI LxN DIM 2X R0.075 PLACES 7 N bxN e B SEATING PLANE aaa C A2 D bbb D/2 C A B Dimensions in millimeters A A1 A2 b b1 D E e L N aaa bbb ONS INCHES MIN MILLIMETERS NOM MAX .020 .023 0.00 .001 (.005) .006 .008 .014 .016 .094 .098 .035 .039 .020 BSC .012 .015 8 .003 .004 .026 .002 .010 .018 .102 .043 .017 MIN NOM MAX 0.50 0.58 0.00 0.03 (0.13) 0.15 0.20 0.35 0.40 2.40 2.50 0.90 1.00 0.50 BSC 0.30 0.38 8 0.08 0.10 0.65 0.05 0.25 0.45 2.60 1.10 0.425 DIMENSIONS P1 P Y Z (C) (Y1) G X X1 DIM INCHES MILLIMETERS C (.034) (0.875) G .008 0.20 P .020 0.50 P1 .039 1.00 X .008 0.20 X1 .016 0.40 Y .027 0.675 Y1 (.061) (1.55) Z .061 1.55 NOTES: CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. REEL SPECIFICATION P/N PKG QTY ESD3V3U4ULC-MS TSLP-9-1 3000 www.msksemi.com ESD3V3U4ULC-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. www.msksemi.com
ESD3V3U4ULC-MS 价格&库存

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ESD3V3U4ULC-MS
  •  国内价格
  • 1+0.23090

库存:3009