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M7

M7

  • 厂商:

    MSKSEMI(美森科)

  • 封装:

    SMA(DO-214AC)

  • 描述:

    SMA I(o):1A IR:5µA

  • 数据手册
  • 价格&库存
M7 数据手册
www.msksemi.com M1 THRU M7 Semiconductor Compiance MECHANICAL DATA FEATURES Case: JEDEC DO-214AC molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.002 ounce, 0.07 grams The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds at terminals MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SYMBOLS Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction and storage temperature range VRRM VRMS VDC M1 50 35 50 M2 M3 M4 M5 M6 M7 UNITS 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 VOLTS VOLTS VOLTS I(AV) 1.0 Amp IFSM 30.0 Amps VF 1.1 Volts IR 5.0 50.0 A CJ RJA TJ,TSTG 15.0 75.0 -65 to +150 pF C/W C Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas www.msksemi.com M1 THRU M7 FIG. 1- FORWARD CURRENT DERATING CURVE 1.0 0.8 0.6 Single Phase Half Wave 60Hz Resistive or inductive Load 0.4 0.2 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES Semiconductor FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 25 20 15 10 175 5.0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C 10 1 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE 0.01 0.8 1.0 1.2 1.4 1.5 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES 20 0.6 1,000 100 TJ=100 C 1 0.1 TJ=25 C 0.01 0 20 40 60 80 100 200 TJ=25 C 10 TRANSIENT THERMAL IMPEDANCE, C/W PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF TJ=150 C 10 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 100 100 NUMBER OF CYCLES AT 60 Hz FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0.1 Compiance FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 100 1 0.1 1.0 10 REVERSE VOLTAGE,VOLTS 100 t,PULSE DURATION,sec. www.msksemi.com M1 THRU M7 Semiconductor Compiance PACKAGE MECHANICAL DATA A Dimensions B Ref. Min. Max. A 4.25 B Inches Min. Max. 4.65 0.167 0.183 2.50 2.90 0.098 0.114 C 1.35 1.65 0.053 0.065 D 0.76 1.52 0.030 0.060 E E 4.93 5.28 0.194 0.208 F 0.051 0.203 0.002 0.008 J K G 0.15 0.31 0.006 0.012 H 1.98 2.41 0.078 0.095 J 6.50 H F G L D Millimeters 2.30 K DO-214AC (SMA) L 0.256 1.70 0.090 0.067 REEL SPECIFICATION P/N PKG QTY M1 THRU M7 SMA 2000 www.msksemi.com M1 THRU M7 Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. www.msksemi.com

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