1N4007 A7

www.msksemi.com 1N4001 THRU 1N4007 Semiconductor FEATURES Compiance MECHANICAL DATA Glass passivated device Ideal for surface mouted applications Low reverse leakage Metallurgically bonded construction High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension Case: JEDEC SOD-123FL molded plastic body over passivated chip Terminals: Solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0007 ounce, 0.02 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. CaDtD M aloCgatalog Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TA=65 C (NOTE 1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) TL=25 C Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range SYMBOLS VRRM VRMS VDC 1N4001 1N4002 A1 A2 50 35 50 100 70 100 1N4003 1N4004 A3 A4 200 140 200 400 280 400 1N4005 A5 600 420 600 1N4006 A6 800 560 800 1N4007 A7 1000 700 1000 UNITS VOLTS VOLTS VOLTS I(AV) 1.0 Amp IFSM 25.0 Amps VF 1.0 Volts IR 10.0 50.0 A CJ RJA TJ,TSTG 4 180 -55 to +150 pF K/W C Note: 1.Averaged over any 20ms period. 2. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3. Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted www.msksemi.com 1N4001 THRU 1N4007 Semiconductor FIG.2 -- TYPICALJUNCTIONCAPACITANCE 1000 10 TJ = 25°C TJ = 100°C 8 7 6 5 4 3 2 1 100 600 700 800 900 1000 0 1100 INSTANTANEOUSFORWARDVOLTAGE,mV 100 TJ = 150C 10 TJ = 125C TJ = 100C 1 TJ = 75C TJ = 50C 0.1 TJ = 25C 0.01 0 100 200 300 400 500 600 700 800 900 INSTANTANEOUSREVERSEVOLTAGE,V 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE,VOLTS FIG.4 -- FORWARDDERATINGCURVE AVERAGE FORWARD CURRENT, AMPERES FIG.3 --TYPICAL INSTANTANEOUS REVERSE CHARACTERISTICS  AMPERES 9 CAPACITANCE, pF TJ = 150°C m AMPERES INSTANTANEOUS FORWARD CURRENT FIG.1 --TYPICALFORWARDCHARACTERISTIC INSTANTANEOUS REVERSE CURRENT Compiance 1.2 Resistive or Inductive Load 1.0 0.8 0.6 0.4 0.2 0 3.0 x 3.0mm 40 µm Thick Copper Pad Areas 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATUR E, www.msksemi.com 1N4001 THRU 1N4007 Semiconductor Compiance 1.8± 0.3 0.95 ±0.25 PACKAGE MECHANICAL DATA 1.15±0.25 0.05-0.30 2.75 ±0.25 0.6±0.3 3.7 ±0.30 Dimensions in millimeters 1.4 2.85 1.2 REEL SPECIFICATION P/N 1N4001 THRU 1N4007 PKG SOD-123FL QTY 3000 www.msksemi.com 1N4001 THRU 1N4007 Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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