AO3415AI-MS

www.msksemi.com AO3415AI-MS Semiconductor Compiance D VDS -20V ID (at VGS=-4.5V) -4A RDS(ON) (at VGS= -4.5V) < 41m RDS(ON) (at VGS= -2.5V) < 53m RDS(ON) (at VGS= -1.8V) < 65m G S ESD protected Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current ±8 V -4 -3.5 IDM Pulsed Drain Current C TA=25°C Power Dissipation Units V ID TA=70°C B Maximum -20 Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1.5 PD TA=70°C Symbol Steady-State Steady-State W 1 TJ, TSTG t ≤ 10s A -30 RJA RJL -55 to 150 Typ 65 85 43 °C Max 80 100 52 Units °C/W °C/W °C/W Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Conditions Min ID=-250A, VGS=0V -20 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±8V Gate Threshold Voltage VDS=VGS, ID=-250 -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -30 -0.57 -0.9 V 34 41 49 59 VGS=-2.5V, ID=-4A 42 53 m VGS=-1.8V, ID=-2A 52 65 m VGS=-1.5V, ID=-1A 61 gFS Forward Transconductance VDS=-5V, ID=-4A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-4A A 20 -0.64 S -1 V -2 A 600 751 905 pF 80 115 150 pF 48 80 115 pF 6 13 20  7.4 9.3 11 nC 0.8 1 1.2 nC 1.3 2.2 3.1 nC Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) Turn-On Rise Time tf trr Turn-Off Fall Time IF=-4A, dI/dt=500A/s 20 26 32 Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=500A/s 40 51 62 Body Diode Reverse Recovery Time m m Qgd Turn-Off DelayTime A A TJ=125°C Coss Units ±10 VGS=-4.5V, ID=-4A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V VGS(th) RDS(ON) Typ VGS=-4.5V, VDS=-10V, RL=2.5, RGEN=3 13 ns 9 ns 19 ns 29 ns ns nC www.msksemi.com AO3415AI-MS Semiconductor Compiance PACKAGE MECHANICAL DATA Symbol A A1 A2 b c D E1 E e e1 L 0 Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° REEL SPECIFICATION P/N AO3415AI-MS PKG SOT-23 QTY 3000 www.msksemi.com AO3415AI-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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