SS14-MS

www.msksemi.com SS12-MS/SS110-MS Semiconductor Compiance FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds at terminals MECHANICAL DATA Case: JEDEC DO-214AC molded plastic body Terminals: leads solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.003 ounce, 0.093 grams 0.004 ounce, 0.111 grams SMA(H) SMA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL(see fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction temperature range Storage temperature range SYMBOLS SS12 SS13 SS14 SS15 SS16 VRRM VRMS VDC 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 SS18 SS110 80 56 80 100 70 100 UNITS VOLTS VOLTS VOLTS I(AV) 1.0 Amp IFSM 40.0 Amps VF IR CJ RqJA TJ, TSTG 0.45 0.55 0.85 0.70 0.5 6.0 110 -65 to +125 5.0 90 88.0 -65 to +150 -65 to +150 Volts mA pF C/W C C Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas www.msksemi.com SS12-MS/SS110-MS Semiconductor Fig.1 Forward Current Derating Curve Fig.2 Typical Reverse Characteristics 10 4 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) 1.5 Average Forward Current (A) Compiance T J=100°C 10 3 T J=75°C 10 2 10 SS12/SS14 SS16-SS120 1 T J=25°C 100 Case Temperature (°C) 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Fig.4 Typical Junction Capacitance T J=25°C 1.0 0.1 Junction Capacitance (pF) 10 SS12/SS14 SS16/SS18 SS110/SS112 SS115/SS120 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 SS12/SS14 20 10 SS16-SS120 0.1 1 10 100 Fig.6- Typical Transient Thermal Impedance 24 18 12 8.3 ms Single Half Sine Wave (JEDEC Method) 1 50 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 30 00 100 Reverse Voltage (V) 36 06 200 Instaneous Forward Voltage (V) 10 Number of Cycles at 60Hz 100 Transient Thermal Impedance（°C/W） Peak Forward Surage Current (A) Instaneous Forward Current (A) 500 20 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.msksemi.com SS12-MS/SS110-MS Semiconductor PACKAGE MECHANICAL DATA A Dimensions B Ref. Min. Max. A 4.25 B Inches Min. Max. 4.65 0.167 0.183 2.50 2.90 0.098 0.114 C 1.35 1.65 0.053 0.065 D 0.76 1.52 0.030 0.060 E E 4.93 5.28 0.194 0.208 F 0.051 0.203 0.002 0.008 J K G 0.15 0.31 0.006 0.012 H 1.98 2.41 0.078 0.095 J 6.50 H F G L D Millimeters 2.30 K DO-214AC (SMA) L 0.256 1.70 0.090 0.067 REEL SPECIFICATION P/N SS12-MS/SS110-MS PKG QTY SMA 2000 Compiance SS12-MS/SS110-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. www.msksemi.com