AO4882-MS

www.msksemi.com AO4882-MS Semiconductor Application Compiance D1 D1 D2 Battery protection D2 S1 G1 S2 G2 Load switch Uninterruptible power supply SOP-8 General Features VDS = 40V ID = 6A D1 D1 7 6 D2 D2 1 2 3 4 8 5 RDS(ON) < 30mΩ @ VGS=10V S1 G1 S2 G2 N-Channel MOSFET Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current1 6 A ID@TA=70℃ Continuous Drain Current1 4 A IDM Pulsed Drain Current2 36 A 31 mJ 25 A 1.9 W EAS IAS PD@TA=25℃ Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range RθJA Thermal Resistance -55 to 150 ℃ Junction-ambient1(t≤10s) 40 ℃/W Junction-ambient1 65 ℃/W Thermal Resistance www.msksemi.com AO4882-MS Semiconductor Compiance Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.032 --- V/℃ VGS=10V , ID=6A --- 25 30 RDS(ON) VGS(th) Static Drain-Source Gate Threshold Voltage VGS=4.5V , ID=4A --1.2 35 1.6 45 2.5 mΩ V △VGS(th) VGS(th) Temperature Coefficient ----- -4.8 --- --1 mV/℃ IDSS Drain-Source Leakage Current VGS=VDS , ID =250uA VDS=32V , VGS=0V , TJ=25℃ VDS=32V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=6A --- 32 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.1 --- Qg Total Gate Charge (4.5V) --- 9.8 --- Qgs Gate-Source Charge --- 2.8 --- Qgd Gate-Drain Charge --- 3.9 --- Td(on) Turn-On Delay Time --- 2.8 --- --- 40.4 --- --- 22.8 --- Fall Time --- 6.4 --- Ciss Input Capacitance --- 1013 --- Coss Output Capacitance --- 107 --- Crss Reverse Transfer Capacitance --- 76 --- IS Continuous Source Current1,5 --- --- 8 A --- --- 36 A Tr Td(off) Tf On-Resistance2 Rise Time VDS=32V , VGS=4.5V , ID=6A VDD=20V , VGS=10V , RG=3.3 Turn-Off Delay Time Current2,5 ID=6A VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current uA nC ns pF ISM Pulsed Source VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time IF=7A , dI/dt=100A/µs , --- 10 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 3.3 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=25A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.msksemi.com AO4882-MS Semiconductor Compiance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage IS Source Current(A) 12 8 TJ=150℃ TJ=25℃ 4 0 0.00 0.25 0.50 0.75 VSD , Source-to-Drain Voltage (V) 1.00 Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 1. 8 Re 1.8 1. 4 N o rm a l i z e d O n Normalized VGS(th) 1.4 1. 0 1 0. 6 0.6 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ 150 0.2 -50 0 50 100 150 TJ , J u n c t i o n T e m p℃ e )r Fig.6 Normalized RDSON vs. TJ www.msksemi.com AO4882-MS Semiconductor 10000 Compiance F=1.0MHz Capacitance (pF) Ciss 1000 Coss 100 Crss 10 1 5 9 13 17 21 VDS , Drain to Source Voltage (V) 25 Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 PDM 0.01 T ON T D = TON /T SINGLE TJpeak = TA+PDM XRθJA 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= V DS 90% 10% VGS Td(on) Tr Ton Td(off) BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS Tf Toff Fig.10 Switching Time Waveform VGS Fig.11 Unclamped Inductive Switching Waveform www.msksemi.com AO4882-MS Semiconductor Compiance PACKAGE MECHANICAL DATA Symbol A A1 A2 b c D e E E1 L θ Dimensions In Millimeters Min 1.350 Max 1.750 Dimensions In Inches Min 0.053 Max 0.069 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.800 5.000 1.270（BSC） 0.004 0.010 0.053 0.061 0.013 0.020 0.007 0.010 0.189 0.197 0.050（BSC） 5.800 3.800 0.400 6.200 4.000 1.270 0.228 0.150 0.016 0.244 0.157 0.050 0° 8° 0° 8° REEL SPECIFICATION P/N PKG QTY AO4882-MS SOP-8 3000 www.msksemi.com AO4882-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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