AO3401MI-MS

www.msksemi.com AO3401MI-MS Semiconductor FEATURE  High dense cell design for extremely low RDS(ON).  Exceptional on-resistance and maximum DC current capability SOT-23-3L 1. GATE APPLICATION  Load/Power Switching  Interfacing Switching 2. SOURCE 1 Compiance 3 2 3. DRAIN Equivalent Circuit V(BR)DSS ID RDS(on)MAX 65mΩ@-10V 75mΩ@-4.5V -30 V -4.2A 90mΩ@-2.5V Maximum ratings ( Ta=25℃ unless otherwise noted) Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V ID -4.2 A Parameter Continuous Drain Current PD 350 mW RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Power Dissipation Thermal Resistance from Junction to Ambient (t