AO3400MI-MS

www.msksemi.com AO3400MI-MS Semiconductor Compiance SOT-23 FEATURE  High dense cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability 1. GATE 2. SOURCE APPLICATION  Load/Power Switching  Interfacing Switching 3. DRAIN Equivalent Circuit V(BR)DSS ID RDS(on)MAX 35mΩ@ 10V 40mΩ@4.5V 30 V 5.8A 52mΩ@2.5V Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5.8 A Drain Current-Pulsed (note 1) IDM 30 A Power Dissipation PD 350 mW RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (note 2) www.msksemi.com AO3400MI-MS Semiconductor Compiance MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V,VGS = 0V Gate-source leakage current IGSS VGS =±12V, VDS = 0V 30 V 1 µA ±100 nA VGS =10V, ID =5.8A 35 mΩ VGS =4.5V, ID =5A 40 mΩ VGS =2.5V,ID=4A 52 mΩ On characteristics Drain-source on-resistance (note 3) Forward tranconductance Gate threshold voltage RDS(on) gFS VGS(th) VDS =5V, ID =5A VDS =VGS, ID =250µA 8 S 0.7 1.4 V 1050 pF Dynamic Characteristics (note 4,5) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg VDS =15V,VGS =0V,f =1MHz VDS =0V,VGS =0V,f =1MHz 99 pF 77 pF 3.6 Ω 5 ns Switching Characteristics (note 4,5) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr VGS=10V,VDS=15V, 7 ns td(off) RL=2.7Ω,RGEN=3Ω 40 ns 6 ns 1 V tf Drain-source diode characteristics and maximum ratings Diode forward voltage (note 3) VSD IS=1A,VGS=0V Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.msksemi.com AO3400MI-MS Semiconductor Compiance Typical Characteristics Output Characteristics 25 Transfer Characteristics 5 Pulsed VDS =5.0V VGS =10.0V、4.5V、3.0V Pulsed 20 4 (A) ID 15 3 10 DRAIN CURRENT DRAIN CURRENT ID (A) VGS =2.5V VGS =2.0V 5 2 Ta=100℃ 1 Ta=25℃ 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE R DS(ON) —— VDS 0 0.0 5 ID (mΩ) 300 RDS(ON) 250 ON-RESISTANCE (mΩ) RDS(ON) ON-RESISTANCE VGS=2.5V 35 VGS=4.5V 30 4 8 12 DRAIN CURRENT ID 16 VGS Pulsed 200 150 100 0 20 ID=5A 0 2 4 6 GATE TO SOURCE VOLTAGE (A) IS —— VSD 10 —— 2.5 (V) 50 VGS=10V 1 2.0 VGS 350 Pulsed 25 1.5 Ta=25℃ Ta=25℃ 40 20 R DS(ON) 400 55 45 1.0 GATE TO SOURCE VOLTAGE 60 50 0.5 (V) 8 VGS 10 (V) Threshold Voltage 1.0 Ta=25℃ Pulsed V S I 0.1 THRESHOLD VOLTAGE SOURCE CURRENT 0.9 TH (A) (V) 1 0.01 1E-3 1E-4 0 200 400 600 800 SOURCE TO DRAIN VOLTAGE 1000 V SD (mV) 1200 ID=250uA 0.8 0.7 0.6 0.5 25 50 75 100 125 JUNCTION TEMPERATURE TJ (℃) www.msksemi.com AO3400MI-MS Semiconductor Compiance PACKAGE MECHANICAL DATA Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° REEL SPECIFICATION P/N AO3400MI-MS PKG SOT-23-3 QTY 3000 www.msksemi.com AO3400MI-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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