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MMBTA06

MMBTA06

  • 厂商:

    LGE(鲁光)

  • 封装:

    SOT-23

  • 描述:

    NPN通用晶体管 VCEO=80V VEBO=4V IC=0.5A SOT23

  • 数据手册
  • 价格&库存
MMBTA06 数据手册
MMBTA05/MMBTA06 NPN General Purpose Transistor 1. BASE 2. EMITTER SOT-23 A 3. COLLECTOR FEATURES E K z High breakdown voltage. z Complementary PNP type available B Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D D (MMBTA55/MMBTA56). z G 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J Low collector-emitter saturation voltage. C APPLICATIONS z J H 0.1 Typical K 2.20 2.60 All Dimensions in mm Ideal for medium power amplification and switching. MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO Parameter Value UNIT collector-base voltage MMBTA05 MMBTA06 60 80 V collector-emitter voltage MMBTA05 MMBTA06 60 80 V VEBO emitter-base voltage 4 V IC collector current (DC) 0.5 A PC Collector dissipation 350 mW RθJA Thermal Resistance, Junction to Ambient 357 °C/W Tj ,Tstg junction and storage temperature ht t p : // Revision:20170701-P1 www.lgesemi .c o m -55 to +150 °C mail:lge@lgesemi.com MMBTA05/MMBTA06 NPN General Purpose Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Parameter Test V(BR)CBO Collector-base breakdown voltage MMBTA05 MMBTA06 IC=100μA,IE=0 60 80 V V(BR)CEO Collector-emitter breakdown voltage MMBTA05 MMBTA06 IC=1.0mA,IB=0 60 80 V V(BR)EBO Emitter-base breakdown voltage IE=10μA,IC=0 4 V Collector cut-off current MMBTA05 MMBTA06 IE = 0; VCB = 60V IE = 0; VCB = 80V - 0.1 μA Collector cut-off current MMBTA05 MMBTA06 IB = 0; VCE = 60V IB= 0; VCE = 60V - 0.1 μA 100 100 - ICBO ICEO conditions MIN. MAX. UNIT hFE DC current gain VCE = 1V; IC= 10mA VCE = 1V;IC = 100mA VCE(sat) Collector-emitter saturation voltage IC = 100mA; IB = 10mA - 0.25 V VBE(ON) Base-emitter voltage IC=100mA,VCE=1.0V - 1.2 V fT Transition frequency IC = 20mA; VCE = 5V; f = 20MHz 100 - MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com MMBTA05/MMBTA06 NPN General Purpose Transistor ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com MMBTA05/MMBTA06 NPN General Purpose Transistor Device Package Shipping MMBTA05/MMBTA06 SOT-23 3000/Tape&Reel ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com
MMBTA06 价格&库存

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MMBTA06
  •  国内价格
  • 1+0.08700
  • 100+0.08120
  • 300+0.07540
  • 500+0.06960
  • 2000+0.06670
  • 5000+0.06496

库存:0