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MMBT5551

MMBT5551

  • 厂商:

    LGE(鲁光)

  • 封装:

    SOT-23

  • 描述:

    NPN通用晶体管 VCBO=180V VCEO=160V VEBO=6V IC=0.6A SOT23

  • 数据手册
  • 价格&库存
MMBT5551 数据手册
MMBT5551 NPN General Purpose Transistor 1. BASE 2. EMITTER 3. COLLECTOR FEATURES SOT-23 A z Epitaxial planar die construction. z Complementary PNP type available E K B Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D (MMBT5401). z Dim J D Also available in lead free version. G 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J APPLICATIONS z H C 0.1 Typical K 2.20 2.60 All Dimensions in mm Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking Package Code MMBT5551 G1 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collector-emitter voltage 160 V VEBO emitter-base voltage 6 V IC collector current (DC) 0.6 A PC Collector dissipation 0.35 W RθJA Thermal resistance,Junction to ambient 357 °C/W Tj ,Tstg junction and storage temperature -55 to +150 °C ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com MMBT5551 NPN General Purpose Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Parameter Test conditions MIN. MAX. UNIT V(BR)CBO Collector-base breakdown voltage IC=100μA,IE=0 180 V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA,IB=0 160 V(BR)EBO Emitter-base breakdown voltage IE=10μA,IC=0 6 ICBO collector cut-off current IE = 0; VCB = 120V - 50 nA IEBO emitter cut-off current IC = 0; VEB = 4V - 50 nA hFE DC current gain VCE = 5V; IC= 1mA VCE = 5V;IC = 10mA VCE = 5V;IC = 50mA 80 100 30 300 - VCE(sat) collector-emitter saturation voltage IC = 10mA; IB=1mA IC = 50mA; IB = 5mA - 0.15 0.2 V VBE(sat) base-emitter saturation voltage IC=10mA; IB=1mA IC=50mA; IB=5mA - 1 1 V fT transition frequency IC=10mA; VCB=10V; f=100MHz 100 300 MHz Cobo Output capacitance IE=10mA; VCE =10V; f=1.0MHz 6.0 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com MMBT5551 NPN General Purpose Transistor Device Package Shipping MMBT5551 SOT-23 3000/Tape&Reel ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com
MMBT5551 价格&库存

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MMBT5551
  •  国内价格
  • 1+0.07211
  • 30+0.06949
  • 100+0.06427
  • 500+0.05904
  • 1000+0.05643

库存:3399

MMBT5551
    •  国内价格
    • 20+0.12811
    • 200+0.10411
    • 600+0.09069
    • 3000+0.07397
    • 9000+0.06707
    • 21000+0.06328

    库存:560