MMBT5551
NPN General Purpose Transistor
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
SOT-23
A
z
Epitaxial planar die construction.
z
Complementary PNP type available
E
K
B
Min
Max
A
2.70
3.10
B
1.10
1.50
C
1.0 Typical
D
(MMBT5401).
z
Dim
J
D
Also available in lead free version.
G
0.4 Typical
E
0.35
0.48
G
1.80
2.00
H
0.02
0.1
J
APPLICATIONS
z
H
C
0.1 Typical
K
2.20
2.60
All Dimensions in mm
Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
Package Code
MMBT5551
G1
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
UNIT
VCBO
collector-base voltage
180
V
VCEO
collector-emitter voltage
160
V
VEBO
emitter-base voltage
6
V
IC
collector current (DC)
0.6
A
PC
Collector dissipation
0.35
W
RθJA
Thermal resistance,Junction to ambient
357
°C/W
Tj ,Tstg
junction and storage temperature
-55 to +150
°C
ht t p : //
Revision:20170701-P1
www.lgesemi .c o m
mail:lge@lgesemi.com
MMBT5551
NPN General Purpose Transistor
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Test
conditions
MIN.
MAX.
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=100μA,IE=0
180
V(BR)CEO
Collector-emitter breakdown voltage
IC=0.1mA,IB=0
160
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA,IC=0
6
ICBO
collector cut-off current
IE = 0; VCB = 120V
-
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 4V
-
50
nA
hFE
DC current gain
VCE = 5V; IC= 1mA
VCE = 5V;IC = 10mA
VCE = 5V;IC = 50mA
80
100
30
300
-
VCE(sat)
collector-emitter saturation voltage
IC = 10mA; IB=1mA
IC = 50mA; IB = 5mA
-
0.15
0.2
V
VBE(sat)
base-emitter saturation voltage
IC=10mA; IB=1mA
IC=50mA; IB=5mA
-
1
1
V
fT
transition frequency
IC=10mA; VCB=10V;
f=100MHz
100
300
MHz
Cobo
Output capacitance
IE=10mA; VCE =10V;
f=1.0MHz
6.0
pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
ht t p : //
Revision:20170701-P1
www.lgesemi .c o m
mail:lge@lgesemi.com
MMBT5551
NPN General Purpose Transistor
Device
Package
Shipping
MMBT5551
SOT-23
3000/Tape&Reel
ht t p : //
Revision:20170701-P1
www.lgesemi .c o m
mail:lge@lgesemi.com
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