MMBTA42

MMBTA42 NPN High Voltage Amplifier 1. BASE 2. EMITTER 3. COLLECTOR FEATURES SOT-23 A z Epitaxial planar die construction. z Complementary PNP type available E K B Min Max A 2.70 3.10 B 1.10 1.50 C D (MMBTA92). z Dim J D Ideal for medium power amplification and switching. G z H C 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J APPLICATIONS 1.0 Typical K 0.1 Typical 2.20 2.60 All Dimensions in mm NPN High voltage amplifier. ORDERING INFORMATION Type No. Marking MMBTA42 Package Code 1D SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value UNIT VCBO Collector-base voltage 300 V VCEO Collector-emitter voltage 300 V VEBO Emitter-base voltage 6 V IC Collector current (DC) 0.2 A PD Total device dissipation 0.35 W RθJA Thermal resistance,junction to ambient 357 °C/W Tj ,Tstg Junction and storage temperature -55 to +150 °C ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com MMBTA42 NPN High Voltage Amplifier ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Parameter Test V(BR)CBO Collector-base breakdown voltage V(BR)CEO conditions MIN. MAX. IC=100μA,IE=0 300 - V Collector-emitter breakdown voltage IC=1.0mA,IB=0 300 - V V(BR)EBO Emitter-base breakdown voltage IE=100μA,IC=0 6 - V ICBO collector cut-off current IE = 0; VCB = 200V - 0.1 μA IEBO emitter cut-off current IC = 0; VEB = 6V - 0.1 μA hFE DC current gain VCE =10V; IC=1mA VCE =10V;IC =10mA VCE =10V;IC =30mA 25 40 40 - VCE(sat) collector-emitter saturation voltage IC =20mA; IB =2mA - 0.5 V VBE(sat) base-emitter saturation voltage IC =20mA; IB=2mA - 0.9 V Cob Collector output capacitance VCB=20V,IE=0;f=1.0MHz 3.0 pF fT transition frequency IC=10mA; VCE =20V f=100MHz 50 - UNIT MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com MMBTA42 NPN High Voltage Amplifier Device Package Shipping MMBTA42 SOT-23 3000/Tape&Reel ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com