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S3A

S3A

  • 厂商:

    LGE(鲁光)

  • 封装:

    SMB(DO-214AA)

  • 描述:

    3.0安培。表面安装整流器

  • 数据手册
  • 价格&库存
S3A 数据手册
S3A - S3M 3.0 AMPS. Surface Mount Rectifiers SMB/DO-214AA 0.180(4.57) 0.160(4.06) Features          For surface mounted application Glass passivated junction chip. Low forward voltage drop High current capability Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-0 High temperature soldering: o 260 C / 10 seconds at terminals 0.086(2.20) 0.077(1.95) 0.155(3.94) 0.130(3.30) 0.209(5.30) 0.201(5.10) 0.012(0.30) 0.006(0.15) 0.096(2.44) 0.084(2.13) 0.059(1.50) 0.035(0.90) 0.008(0.20) 0.002(0.05) Mechanical Data     Dimensions in inches and(millimeters) Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Weight: 0.093 gram Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol S3A VRRM VRMS VDC Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TL =75 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 3.0A 400 280 400 S3J 600 420 600 1000 700 1000 Units V V V 80 A VF 1.15 V 10 250 1.5 40 10 -55 to +150 -55 to +150 uA uA uS pF o C/W o C o C IR RθJL TJ Storage Temperature Range TSTG 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Notes: 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. Measured on P.C. Board with 0.4” x 0.4” (10mm x 10mm) Copper Pad Areas. ht t p : // 800 560 800 S3M IFSM Typical Thermal Resistance (Note 3) Revision:20170701-P1 S3K A Trr Cj Operating Temperature Range 200 140 200 S3G 3.0 Typical Junction Capacitance ( Note 2 ) Typical Reverse Recovery Time ( Note 1 ) 100 70 100 S3D I(AV) o Maximum DC Reverse Current @ TA =25 C at Rated DC Blocking Voltage @ TA=125 oC 50 35 50 S3B www.lgesemi .c o m mail:lge@lgesemi.com S3A - S3M 3.0 AMPS. Surface Mount Rectifiers RATINGS AND CHARACTERISTIC CURVES (S3AB THRU S3MB) FIG.2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 100 3.0 INSTANTANEOUS REVERSE CURRENT. ( A) AVERAGE FORWARD CURRENT. (A) 3.5 2.5 2.0 1.5 1.0 RESISTIVE OR INDUCTIVE LOAD P. C. BOARD MOUNTED ON 10mm2 PAD AREAS 0.5 0 50 60 70 80 90 100 110 120 130 o LEAD TEMPERATURE. ( C) 140 165 150 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT Tj=125 0C 10 1 Tj=25 0C 0.1 0 100 40 60 80 100 120 140 50 FIG.5- TYPICAL FORWARD CHARACTERISTICS 100 8.3ms Single Half Sine Wave JEDEC Method Tj=Tj max 10 5 10 NUMBER OF CYCLES AT 60Hz 1 100 JUNCTION CAPACITANCE.(pF) 20 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 30 100 50 INSTANTANEOUS FORWARD CURRENT. (A) PEAK FORWARD SURGE CURRENT. (A) 200 FIG.4- TYPICAL JUNCTION CAPACITANCE 50 Tj=25 0C f=1.0MHz Vsig=50mVp-p 10 3 1 0.3 0.1 10 Tj=25 0C PULSE WIDTH-300 S 2% DUTY CYCLE 0.03 5 5 1 0.01 0.6 100 10 50 REVERSE VOLTAGE. (V) 0.7 .8 .9 1.0 1.2 1.4 1.6 FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE trr +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm PACKAGE SPQ/PCS CARTON SPQ/PCS CARTON SIZE/CM CARTON GW/KG CARTON NW/KG SMB 3000/REEL 48000 36X35.8X36.5 12.00 11.00 ht t p : // Revision:20170701-P1 0 -0.25A www.lgesemi .c o m mail:lge@lgesemi.com

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S3A
    •  国内价格
    • 10+0.21455
    • 100+0.17258
    • 600+0.15169
    • 1200+0.14941

    库存:693