KBP307

KBP301 THRU KBP307 SINGLE PHASE 3.0AMP GLASS PASSIVATED BRIDGE RECTIFIER KBP Features 14.5± 0.5 11.2± 0.5 3.2 45° Mechanical Data · Case: KBP, molded plastic · Terminals: plated leads solderable per AC - 1.0 TYP. + 15.2 MIN MIL-STD-202, Method 208 · Polarity: as marked on case · Mounting position: Any · Marking: type number 4.8± 0.2 1.5 TYP. Glass passivated die construction Low forward voltage drop High current capability High surge current capability Plastic material-UL flammability 94V-0 12.7 MIN · · · · · 1.8 TYP. 1.8 TYP. φ 0.8± 0.1 3.7± 0.25 + ~ ~ 3.7± 0.25 - · Lead Free: For RoHS / Lead Free Version Dimensions in millimeters Maximum Ratings and Electrical Characteristics Rating at 25℃ ambient temperature unless otherwise specified. Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. TYPE NUMBER SYMBOL KBP 301 KBP 302 KBP 303 KBP 304 KBP 305 KBP 306 KBP 307 UNITS 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V VRRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRWM RMS Reverse Voltage VRMS Average Rectified Output Current (Note 1) @TC=10 00℃ IF(AV) 3.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 60 A VDC I2t Rating for Fusing (t < 8.3ms) Forward Voltage per element @IF=3.0A Peak Reverse Current At Rated DC Blocking Voltage @TA=25℃ @TA=125℃ Typical Thermal Resistance per leg (Note 2) Operating and Storage Temperature Range I2t 14.94 VFM 1.1 V IR 5.0 500 uA RθJA 30 RθJL 11 TJ,TSTG -55to+150 A2s ℃/W ℃ Note:1. Mounted on glass epoxy PC board with 1.3mm2 solder pad. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.. Revision:20170701-P1 ht t p : // www.lgesemi .c o m mail:lge@lgesemi.com KBP301 THRU KBP307 SINGLE PHASE 3.0AMP GLASS PASSIVATED BRIDGE RECTIFIER Fig. 2 Typical Fwd Characteristics IF, INSTANTANEOUS FWD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) Fig. 1 Forward Current Derating Curve 3.0 2.0 1.0 10 TA= 25°C 0.1 Pulse Width = 300 µs 0 0 0 50 100 0 150 T,TEMPERATURE (°C) 0.6 0.8 1.0 1.2 1.4 Fig. 4 Typical Junction Capacitance 100 100 Single Half Sine-Wave Pulse Width =8.3ms (JEDEC Method) f = 1MHz Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FWD SURGE CURRENT (A) 0.4 VF, INSTANTANEOUS FWD VOLTAGE (V) Fig. 3 Max Non-Repetitive Peak Fwd Surge Current 50 40 30 10 0 0 0.2 0 100 10 0 10 100 VR, REVERSE VOLTAGE (V) NUMBER OF CYCLES AT 60 Hz IR, INSTANTANEOUS REVERSE CURRENT (A) Fig. 5 T ypical Reverse Characteristics (per element) 100 TJ = 125C 10 1.0 TJ = 25C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Revision:20170701-P1 ht t p : // www.lgesemi .c o m mail:lge@lgesemi.com