PDCSD12

ESD Protection Diode PDCSD12 Description Features The PDCSD12 is designed to replacemultilayervaristors(MLVs) in portable applications such as cell phones, notebook computers and PDA’s, using monolithic silicon technology to provide fast response time and ultra low ESD clamping voltage, making this device an ideal solution for protecting sensitive semiconductorcomponents from damage. The PDCSD12complies with the IEC 61000-4-2 (ESD) standard with ±30kV air and ±30kV contact discharge. It is assembled into a lead-free SOD-323 package and will protect one unidirectional line. These devices will fit on the same PCB pad area as an 0805 MLV device.  350W peak pulse power (8/20μs)  Protects one data or power line  Ultra low leakage：nA level  Operating voltage：12V  Ultra low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 13A (8/20μs)  RoHS Compliant Mechanical Characteristics Applications  Package: SOD-323  Lead Finish: Matte Tin  Case Material: “Green” Molding Compound.  UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 3 per J-STD-020  Terminal Connections: See Diagram Below  Marking Information: See Below        Dimensions and Pin Configuration Marking Information Cellular Handsets and Accessories Personal Digital Assistants Notebooks and Handhelds Portable Instrumentation Peripherals Pagers Peripherals Desktop and Servers 312 312= Device Marking Code Circuit and Pin Schematic Bar denotes Cathode Ordering Information Part Number Marking Packaging Reel Size PDCSD12 312 3000/Tape & Reel 7 inch www.pdwsemi.com 1 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSD12 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 350 W Peak Pulse Current (8/20µs) Ipp 13 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range ±30 kV TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 12 V Pin 1 to Pin 2 V IT = 1mA, Pin 1 to Pin 2 13.3 Test Condition Reverse Leakage Current IR 0.5 μA VRWM = 12V, Pin 1 to Pin 2 Forward Voltage VF 1.2 V IF = 10mA, Pin 2 to Pin 1 Clamping Voltage VC 16 V Clamping Voltage VC 24 V Junction Capacitance CJ www.pdwsemi.com 55 2 -4 pF IPP = 1A (8 x 20µs pulse), Pin 1 to Pin 2 IPP = 13A (8 x 20µs pulse), Pin 1 to Pin 2 VR = 0V, f = 1MHz © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSD12 Typical Performance Characteristics (TA=25℃ unless otherwise Specified) Junction Capacitance vs. Reverse Voltage Peak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current Power Derating Curve ESD Clamping Voltage 8 X 20μs Pulse Waveform www.pdwsemi.com 8 kV Contact per IEC61000−4−2 3 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSD12 SOD-323 Package Outline Drawing A DIMENS MILLIMETERS INCHES MIN MAX MIN MAX 1.50 1.80 0.060 0.071 SYM B 1.20 1.40 0.045 0.054 C 2.30 2.70 0.090 0.107 D - 1.10 - 0.043 E 0.30 0.40 0.012 0.016 F 0.10 0.25 0.004 0.010 H - 0.10 - 0.004 Suggested Land Pattern SYM www.pdwsemi.com 4 -4 DIMENSIONS MILLIMETERS INCHES A 3.15 0.120 B 0.80 0.031 C 0.80 0.031 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08