PDCSM33

ESD Protection Diode PDCSM33 Description Features The PDCSM33 is an uni-directional TVS diode array, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting sensitive semiconductor components from damage. The PDCSM33 complies with the IEC 61000-4-2 (ESD) standard with ±30kV air and ±30kV contact discharge. It is assembled into a lead- free SOT-23 package. It is designed to protect components which are connected to data and transmission lines from voltage surges.  300W peak pulse power(8/20µs)  Protects one two uni-directional lines  Ultra low leakage：nA level  Operating voltage：3.3V  Low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lightning) 25A (8/20µs)  RoHS Compliant Mechanical Characteristics Applications  Package: SOT-23  Lead Finish: Matte Tin  Case Material: “Green” Molding Compound.  Moisture Sensitivity: Level 3 per J-STD-020  Terminal Connections: See Diagram Below  Marking Information: See Below        Dimensions and Pin Configuration Marking Information Peripherals Industrial Equipment Notebook Computers Portable Instrumentation Microprocessor Based Equipment Cell Phone Handsets and Accessories Personal Digital Assistants (PDAs) and Pagers S33 S33= Device Marking Code Circuit and Pin Schematic Ordering Information Part Number Marking Packaging Reel Size PDCSM33 S33 3000/Tape & Reel 7 inch www.pdwsemi.com 1 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSM33 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 300 W Peak Pulse Current (8/20µs) IPP 25 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±30 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Reverse Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 3.3 V 3.5 V Test Condition IT = 1mA VRWM = 3.3V, any I/O pin to ground IPP = 1A (8 x 20µs pulse), any I/O pin to ground Reverse Leakage Current IR 0.5 µA Clamping Voltage VC 5 V Clamping Voltage VC 12 V IPP = 25A (8 x 20µs pulse), any I/ O pin to ground Junction Capacitance CJ 200 pF VR = 0V, f = 1MHz, any I/O pin to ground www.pdwsemi.com 2 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSM33 Typical Performance Characteristics (TA=25℃ unless otherwise Specified) Junction Capacitance vs. Reverse Voltage Peak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current Power Derating Curve Note：Data is taken with a 10x attenuator ESD Clamping Voltage 8 X 20μs Pulse Waveform www.pdwsemi.com 8 kV Contact per IEC61000−4−2 3 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSM33 SOT-23 Package Outline Drawing DIMENSIONS A INCHES MIN NOM MAX 0.035 0.044 MILLIMETERS MIN NOM MAX 0.89 1.12 A1 0.000 - 0.004 0.01 - 0.10 A2 0.035 0.037 0.040 0.88 0.95 1.02 b 0.012 - 0.020 0.30 - 0.51 c 0.003 - 0.007 0.08 - 0.18 D 0.110 0.114 0.120 2.80 2.90 3.04 E 0.082 0.093 0.104 2.10 2.37 2.64 E1 0.047 0.051 0.055 1.20 1.30 1.40 SYM e 0.075 e1 0.037 L 0.015 L1 Suggested Land Pattern 0.95BSC 0.024 0.40 0.022 N ꝋ 0.020 1.90BSC 3 0° 0.50 0.60 0.55 3 8° - 0° - aaa 0.004 0.10 bbb 0.008 0.20 8° DIMENSIONS www.pdwsemi.com 4 -4 SYM INCHES MILLIMETERS C 0.087 2.20 E 0.037 0.95 E1 0.075 1.90 G 0.031 0.80 X 0.039 1.00 Y 0.055 1.40 Z 0.141 3.60 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08