PDCSM12

ESD Protection Diode PDCSM12 Description Features The PDCSM12 is an uni-directional TVS diode array,utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting sensitive semiconductor components from damage. The PDCSM12 complies with the IEC 61000-4-2 (ESD) standard with ±30kV air and ±30kV contact discharge. It is assembled into a lead-free SOT-23 package. It is designed to protect components which are connected to data and transmission lines fron voltage surges.  270W peak pulse power(8/20µs)  Protects two uni-directional lines  Ultra low leakage: nA level  Operating voltage: 12V  Low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lighting) 13A (8/20µs)  RoHS Compliant Mechanical Characteristics Applications  Package: SOT-23  Lead Finish: Matte Tin  Case Material: “Green” Molding Compound.  Moisture Sensitivity: Level 3 per J-STD-020  Terminal Connections: See Diagram Below  Marking Information: See Below       Dimensions and Pin Configuration Marking Information Cellular Handsets and Accessories Notebook and Handhelds Portable Instrumentation Set Top Box Industrial Controls Server and Desktop PC S12 Marking Code - Circuit and Pin Schematic Ordering Information Part Number Marking Packaging Reel Size PDCSM12 S12 3000/Tape & Reel 7 inch www.pdwsemi.com 1 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSM12 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 350 W Peak Pulse Current (8/20µs) IPP 13 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range ±30 kV TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 12 V 13.3 Test Condition V IT = 1mA Reverse Leakage Current IR 0.2 μA VRWM = 12V Clamping Voltage VC 16 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 23.5 27 V IPP = 13A (8 x 20µs pulse) Junction Capacitance CJ 40 pF VR = 0V, f = 1MHz, Pin 1 to Pin 3 or Pin 2 to Pin 3 www.pdwsemi.com 2 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSM12 Typical Performance Characteristics (TA=25℃ unless otherwise Specified) Peak Pulse Power vs. Pulse Time Junction Capacitance vs. Reverse Voltage Power Derating Curve Clamping Voltage vs. Peak Pulse Current 100 % of Peak Pulse Current 90 80 70 60 50 40 30 20 10 0 0 www.pdwsemi.com 40 60 Time_t(uS) 8 X 20uS Pulse Waveform 20 Note：Data is taken with a 10x attenuator 80 ESD Clamping Voltage 8 kV Contact per IEC61000−4−2 3 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSM12 SOT-23 Package Outline Drawing DIMENSIONS A INCHES MIN NOM MAX 0.035 0.044 MILLIMETERS MIN NOM MAX 0.89 1.12 A1 0.000 - 0.004 0.01 - 0.10 A2 0.035 0.037 0.040 0.88 0.95 1.02 b 0.012 - 0.020 0.30 - 0.51 c 0.003 - 0.007 0.08 - 0.18 D 0.110 0.114 0.120 2.80 2.90 3.04 E 0.082 0.093 0.104 2.10 2.37 2.64 E1 0.047 0.051 0.055 1.20 1.30 1.40 SYM e 0.075 e1 0.037 L 0.015 L1 Suggested Land Pattern 0.95BSC 0.024 0.40 0.022 N ꝋ 0.020 1.90BSC 3 0° 0.50 0.60 0.55 3 8° - 0° - aaa 0.004 0.10 bbb 0.008 0.20 8° DIMENSIONS www.pdwsemi.com 4 -4 SYM INCHES MILLIMETERS C 0.087 2.20 E 0.037 0.95 E1 0.075 1.90 G 0.031 0.80 X 0.039 1.00 Y 0.055 1.40 Z 0.141 3.60 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08