PDCSM24C

ESD Protection Diode PDCSM24C Description Features The PDCSM24C is a bi-directional TVS diode array, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting sensitive semiconductor components from damage. The PDCSM24C complies with the IEC 61000-4-2 (ESD) standard with ±30kV air and ±30kV contact discharge. It is assembled into a leadfree SOT-23 package. It is designed to protect components which are connected to data and transmission lines from voltage surges.  Protects two uni-directional lines  Ultra low leakage: nA level  Operating voltage: 24V  Low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lighting) 5A (8/20µs)  RoHS Compliant Mechanical Characteristics Applications  Package: SOT-23  Lead Finish: Matte Tin  Case Material: “Green” Molding Compound.  Moisture Sensitivity: Level 3 per J-STD-020  Terminal Connections: See Diagram Below  Marking Information: See Below       Dimensions and Pin Configuration Marking Information Cellular Handsets and Accessories Notebook and Handhelds Portable Instrumentation Set Top Box Industrial Controls Server and Desktop PC 24M 24M = Device Marking Code Circuit and Pin Schematic Ordering Information Part Number Marking Packaging Reel Size PDCSM24C 24M 3000/Tape & Reel 7 inch www.pdwsemi.com 1 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSM24C Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol ESD per IEC 61000−4−2 (Air) Value ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range ±30 Unit kV TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR 26.7 Max Unit Test Condition 24 V 32 V IT = 1mA Reverse Leakage Current IR 500 nA VRWM = 24V Clamping Voltage VC 36 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 60 V IPP = 5A (8 x 20µs pulse) Junction Capacitance CJ 30 pF VR = 0V, f = 1MHz, Pin 1 to Pin 3 or Pin 2 to Pin 3 www.pdwsemi.com 2 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSM24C Typical Performance Characteristics (TA=25℃ unless otherwise Specified) Peak Pulse Power vs. Pulse Time Junction Capacitance vs. Reverse Voltage Power Derating Curve Clamping Voltage vs. Peak Pulse Current Note：Data is taken with a 10x attenuator ESD Clamping Voltage 8 kV Contact per IEC61000−4−2 8 X 20μs Pulse Waveform www.pdwsemi.com 3 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSM24C SOT-23 Package Outline Drawing DIMENSIONS A INCHES MIN NOM MAX 0.035 0.044 MILLIMETERS MIN NOM MAX 0.89 1.12 A1 0.000 - 0.004 0.01 - 0.10 A2 0.035 0.037 0.040 0.88 0.95 1.02 b 0.012 - 0.020 0.30 - 0.51 c 0.003 - 0.007 0.08 - 0.18 D 0.110 0.114 0.120 2.80 2.90 3.04 E 0.082 0.093 0.104 2.10 2.37 2.64 E1 0.047 0.051 0.055 1.20 1.30 1.40 SYM e 0.075 e1 L 0.037 0.015 L1 0.020 0.95BSC 0.024 0.40 0.022 N ꝋ 1.90BSC 3 0° 0.50 0.60 0.55 3 8° - 0° - aaa 0.004 0.10 bbb 0.008 0.20 8° Suggested Land Pattern DIMENSIONS www.pdwsemi.com 4 -4 SYM INCHES MILLIMETERS C 0.087 2.20 E 0.037 0.95 E1 0.075 1.90 G 0.031 0.80 X 0.039 1.00 Y 0.055 1.40 Z 0.141 3.60 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08