PDLLC03CI

ESD Protection Diode PDLLC03CI Description Features PDLLC03CI a 3V bidirectional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive high-speed data lines. The PDLLC03CI has a low capacitance, and complies with the IEC 61000-4-2 (ESD) standard with ±30kV air and ±30kV contact discharge. It is assembled into a SOD-323 lead-free package. The small size, low capacitance and high ESD surge protection make PDLLC03CI an ideal choice to protect cell phone, wireless systems,and communication equipment.  340W peak pulse power ( 8/20μs)  Ultra low capacitance ：1.0pF typical  Ultra low leakage：nA level  Low Operating：3.3V  Low clamping voltage  Protects one power line or data line  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lightning) 21A (8/20μs)  RoHS Compliant Mechanical Characteristics Applications  Package: SOD-323  Lead Finish: Matte Tin  Case Material: “Green” Molding Compound.  Moisture Sensitivity: Level 3 per J-STD-020  Terminal Connections: See Diagram Below  Marking Information: See Below     Dimensions and Pin Configuration Marking Information USB Ports Smart Phones Wireless Systems Ethernet 10/100/1000 Base T CC CC = Device Marking Code Circuit and Pin Schematic Ordering Information Part Number Marking Packaging Reel Size PDLLC03CI CC 3000/Tape & Reel 7 inch www.pdwsemi.com 1 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDLLC03CI Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 340 W Peak Pulse Current (8/20µs) IPP 21 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±30 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Symbol Min Typ VRWM Max Unit 3.3 V Test Condition Punch-Through Voltage VPT 3.5 V IT = 2µA Snap-Back Voltage VBR 4 V IT = 1mA Reverse Leakage Current IR 100 nA VRWM = 3.3V Clamping Voltage VC 6 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 16 V IPP = 21A (8 x 20µs pulse) Junction Capacitance CJ pF VR = 0V, f = 1MHz www.pdwsemi.com 1 2 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDLLC03CI Typical Performance Characteristics (TA=25℃ unless otherwise Specified) Junction Capacitance vs. Reverse Voltage Peak Pulse Power vs. Pulse Time Power Derating Curve Clamping Voltage vs. Peak Pulse Current 100 % of Peak Pulse Current 90 80 70 60 50 40 30 20 10 Note：Data is taken with a 10x attenuator 0 0 20 40 Time_t(uS) 60 80 ESD Clamping Voltage 8 kV Contact per IEC61000−4−2 8 X 20μs Pulse Waveform www.pdwsemi.com 3 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDLLC03CI SOD-323 Package Outline Drawing A DIMENSIONS MILLIMETERS INCHES MIN MAX MIN MAX 1.50 1.80 0.060 0.071 SYM B 1.20 1.40 0.045 0.054 C 2.30 2.70 0.090 0.107 D - 1.10 - 0.043 E 0.30 0.40 0.012 0.016 F 0.10 0.25 0.004 0.010 H - 0.10 - 0.004 Suggested Land Pattern SYM www.pdwsemi.com 4 -4 DIMENSIONS MILLIMETERS INCHES A 3.15 0.120 B 0.80 0.031 C 0.80 0.031 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08