ESD Protection Diode
PDCSD12C
Description
Features
The PDCSD12C is a 12V bi-directional TVS diode, utilizing
leading monolithic silicon technology to provide fast response
time and low ESD clamping voltage, making this device an
ideal solution for protecting voltage sensitive data and power
line. The PDCSD12C-T complies with the IEC 61000-4-2
(ESD) standard with ±30 kV air and ±30 kV contact discharge.
It is assembled into an ultra-small lead-free SOD-323
package.The small size and high ESD surge protection make
PDCSD12C-T an ideal choice to protect cell phone, digital
cameras, audio players and many other portable applications.
375W peak pulse power(8 /20μs)
Protects one data or power line
Ultra low leakage:nA level
Operating voltage:12V
Low clamping voltage
2-pin leadless package
Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test Air
discharge: ±30kV
Contact discharge: ±30kV
– IEC61000-4-5 (Lightning) 15A (8/20µs)
RoHS Compliant
Mechanical Characteristics
Applications
Package: SOD-323
Case Material: “Green” Molding Compound.
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Below
Dimensions and Pin Configuration
Marking Information
Cellular Handsets and Accessories
Personal Digital Assistants
Notebooks and Handhelds
Portable Instrumentation
Digital Cameras
Peripherals
Audio Players
12
12 = Device Marking Code
Circuit and Pin Schematic
Ordering Information
Part Number
Marking
Packaging
Reel Size
PDCSD12C
12
10000/Tape & Reel
7 inch
www.pdwsemi.com
1 -4
© 2022 PDW, Inc.
Specifications are subject to change without notice.
Revised: 2022/04/08
ESD Protection Diode
PDCSD12C
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Peak Pulse Power (8/20µs)
Ppk
375
W
Peak Pulse Current (8/20µs)
Ipp
15
A
ESD per IEC 61000−4−2 (Air)
±30
VESD
ESD per IEC 61000−4−2 (Contact)
Operating Temperature Range
Storage Temperature Range
kV
±30
TJ
−55 to +125
°C
Tstg
−55 to +150
°C
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
Min
Typ
VRWM
VBR
Max
Unit
12
V
13.3
Test Condition
V
IT = 1mA
Reverse Leakage Current
IR
0.5
μA
VRWM = 12V
Clamping Voltage
VC
16
V
IPP = 1A (8 x 20µs pulse)
Clamping Voltage
VC
25
V
IPP = 15A (8 x 20µs pulse)
Junction Capacitance
CJ
pF
VR = 0V, f = 1MHz
www.pdwsemi.com
35
2 -4
© 2022 PDW, Inc.
Specifications are subject to change without notice.
Revised: 2022/04/08
ESD Protection Diode
PDCSD12C
Typical Performance Characteristics (TA=25℃ unless otherwise Specified)
Junction Capacitance vs. Reverse Voltage
Peak Pulse Power vs. Pulse Time
Clamping Voltage vs. Peak Pulse Current
Power Derating Curve
ESD Clamping Voltage
8 X 20μs Pulse Waveform
www.pdwsemi.com
8 kV Contact per IEC61000−4−2
3 -4
© 2022 PDW, Inc.
Specifications are subject to change without notice.
Revised: 2022/04/08
ESD Protection Diode
PDCSD12C
SOD-323 Package Outline Drawing
A
DIMENSIO
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
1.50
1.80
0.060
0.071
SYM
B
1.20
1.40
0.045
0.054
C
2.30
2.70
0.090
0.107
D
-
1.10
-
0.043
E
0.30
0.40
0.012
0.016
F
0.10
0.25
0.004
0.010
H
-
0.10
-
0.004
Suggested Land Pattern
SYM
www.pdwsemi.com
4 -4
DIMENSIONS
MILLIMETERS
INCHES
A
3.15
0.120
B
0.80
0.031
C
0.80
0.031
© 2022 PDW, Inc.
Specifications are subject to change without notice.
Revised: 2022/04/08
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