ESD Protection Diode
PDL0501P1
Description
Features
The PDL0501P1 is an uni-directional TVS diode, utilizing
leading monolithic silicon technology to provide fast
response time and low ESD clamping voltage, making this
device an ideal solution for protecting voltage sensitive highspeed data lines. The PDL0501P1 has an ultra- low
capacitance with a typical value at 0.8pF, and complies with
the IEC 61000-4-2 (ESD) standard with ±25kV air and
±20kV contact discharge. It is assembled into an ultra-small
1.0 x0.6 x 0.5mm lead-free DFN package. The small size,
ultra-low capacitance and high ESD surge protection make
PDL0501P1 an ideal choice to protect cell phone, digital
visual interfaces, HDMI, DVI, USB2.0, USB3.0, and other
high speed ports.
Ultra small package: 1.0 x0.6 x0.5mm
Ultra low capacitance: 0.8pF typical
Ultra low leakage:nA level
Operating voltage:5V
Low clamping voltage
2-pin leadless package
Complies with following standards:
Mechanical Characteristics
Applications
Package: DFN1006-2 (1.0 x0.6 x0.5mm)
Case Material: “Green” Molding Compound.
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Below
Dimensions and Pin Configuration
Marking Information
– IEC 61000-4-2 (ESD) immunity test Air
discharge: ±25kV
Contact discharge: ±20kV
– IEC61000-4-5 (Lightning) 5A (8/20µs)
RoHS Compliant
Cellular Handsets and Accessories
Display Ports
MDDI Ports
USB Ports
Digital Visual Interface(DVI)
PCI Express and Serial SATA Ports
1.0
0.6
1
-
5U
0.5
5U = Device Marking Code
Bar denotes cathode
2
Ordering Information
Part Number
Marking
Packaging
Reel Size
PDL0501P1
5U
10000/Tape & Reel
7 inch
www.pdwsemi.com
1 -4
© 2022 PDW, Inc.
Specifications are subject to change without notice.
Revised: 2022/04/08
ESD Protection Diode
PDL0501P1
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Peak Pulse Power(8/20µs)
Ppk
80
W
Peak Pulse Current(8/20µs)
IPP
5
A
ESD per IEC 61000−4−2 (Air)
±25
VESD
ESD per IEC 61000−4−2 (Contact)
Operating Temperature Range
Storage Temperature Range
kV
±20
TJ
−55 to +125
°C
Tstg
−55 to +150
°C
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
Min
Typ
VRWM
VBR
Max
Unit
5
V
Pin 1 to Pin 2
V
IT = 1mA, Pin 1 to Pin 2
6
Test Condition
Reverse Leakage Current
IR
0.5
µA
VRWM = 5V, Pin 1 to Pin 2
Clamping Voltage
VC
10
V
IPP = 1A (8 x 20µs pulse), Pin 1 to
Pin 2
Clamping Voltage
VC
16
V
IPP = 5A (8 x 20µs pulse), Pin
1 to Pin 2
Junction Capacitance
CJ
pF
VR = 0V, f = 1MHz
www.pdwsemi.com
0.8
2 -4
© 2022 PDW, Inc.
Specifications are subject to change without notice.
Revised: 2022/04/08
ESD Protection Diode
PDL0501P1
Typical Performance Characteristics (TA=25℃ unless otherwise Specified)
Junction Capacitance vs. Reverse Voltage
Peak Pulse Power vs. Pulse Time
Clamping Voltage vs. Peak Pulse Current
Power Derating Curve
Note:Data is taken with a 10x attenuator
ESD Clamping Voltage
8 X 20μs Pulse Waveform
www.pdwsemi.com
8 kV Contact per IEC61000−4−2
3 -4
© 2022 PDW, Inc.
Specifications are subject to change without notice.
Revised: 2022/04/08
ESD Protection Diode
PDL0501P1
DFN1006-2 Package Outline Drawing
A
DIMENSIONS
MILLIMETERS
INCHES
MIN
NOM
MAX
MIN
NOM
MAX
0.450
0.500
0.550
0.018
0.020
0.022
A1
0.000
0.020
0.050
0.000
0.001
0.002
b
0.450
0.50
0.550
0.018
0.020
0.022
c
0.120
0.150
0.180
0.005
0.006
0.007
D
0.950
1.000
1.050
0.037
0.039
0.041
SYM
e
0.65 BSC
0.026 BSC
E
0.55
0.60
0.65
0.022
0.024
0.026
L
0.20
0.25
0.30
0.008
0.010
0.012
L1
0.05REF
h
0.07
0.12
0.002REF
0.17
0.003
0.005
0.007
Suggested Land Pattern
SYM
www.pdwsemi.com
DIMENSIONS
MILLIMETERS
INCHES
X
0.60
0.024
Y1
0.50
0.020
Y2
0.30
0.012
Y3
0.80
0.032
Z
1.30
0.052
4 -4
© 2022 PDW, Inc.
Specifications are subject to change without notice.
Revised: 2022/04/08
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