BY25Q64ASSIG(R)

Boya Microelectronics Memory Series BY25Q64AS 64M BIT SPI NOR FLASH Features ● Serial Peripheral Interface (SPI) - Standard SPI: SCLK, /CS, SI, SO, /WP, /HOLD - Dual SPI: SCLK, /CS, IO0, IO1, /WP, /HOLD - Quad SPI: SCLK, /CS, IO0, IO1, IO2, IO3 ● Read - Normal Read (Serial): 55MHz clock rate - Fast Read (Serial): 108MHz clock rate with 30PF load - Dual I/O data transfer up to 216Mbits/S - Quad I/O data transfer up to 432Mbits/S -Continuous Read with 8/16/32/64-byte Wrap ● Program - Serial-input Page Program up to 256bytes - Program Suspend and Resume ● Erase - Block erase (64/32 KB) - Sector erase (4 KB) - Chip erase - Erase Suspend and Resume ● Program/Erase Speed - Page Program time: 0.6ms typical - Sector Erase time: 50ms typical - Block Erase time: 0.15/0.25s typical - Chip Erase time: 25s typical ● Flexible Architecture - Sector of 4K-byte - Block of 32/64K-byte ● Low Power Consumption - 20mA maximum active current - 5uA maximum power down current ● Software/Hardware Write Protection - 3x256-Byte Security Registers with OTP Locks - Discoverable Parameters (SFDP) register - Enable/Disable protection with WP Pin - Write protect all/portion of memory via software - Top or Bottom, Sector or Block selection ● Single Supply Voltage - Full voltage range: 2.7~3.6V ● Temperature Range - Commercial (0℃ to +70℃) - Industrial (-40℃ to +85℃) - Industrial (-40℃ to +105℃) ● Cycling Endurance/Data Retention - Typical 100k Program-Erase cycles on any sector - Typical 20-year data retention Apr 2022 Rev 1.9 1 / 76 Contents BY25Q64AS Contents 1. Description ................................................................................. 4 2. Signal Description ...................................................................... 6 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 Input/Output Summary ................................................................................. 6 Chip Select (/CS) .......................................................................................... 6 Serial Clock (SCLK) ..................................................................................... 6 Serial Input (SI)/IO0 ..................................................................................... 6 Serial Data Output (SO)/IO1......................................................................... 7 Write Protect (/WP)/IO2 ............................................................................... 7 HOLD (/HOLD)/IO3 .................................................................................... 7 VCC Power Supply ....................................................................................... 8 VSS Ground .................................................................................................. 8 3. Block/Sector Addresses ............................................................. 9 4. SPI Operation .......................................................................... 10 4.1 4.2 4.3 Standard SPI Instructions ............................................................................ 10 Dual SPI Instructions .................................................................................. 10 Quad SPI Instructions ................................................................................. 10 5. Operation Features ................................................................... 11 5.1 Supply Voltage .............................................................................................11 5.1.1 Operating Supply Voltage .........................................................11 5.1.2 Power-up Conditions ................................................................11 5.1.3 Device Reset ............................................................................11 5.1.4 Power-down .............................................................................11 5.2 Active Power and Standby Power Modes ....................................................11 5.3 Hold Condition............................................................................................ 12 5.4 Status Register............................................................................................. 13 5.4.1 Status Register Table .............................................................. 13 5.4.2 The Status and Control Bits..................................................... 13 5.4.3 Status Register Protect Table .................................................. 15 5.4.4 Write Protect Features............................................................. 15 5.4.5 Status Register Memory Protection ......................................... 16 6. Device Identification ................................................................. 18 7. Instructions Description ............................................................ 19 7.1 Configuration and Status Instructions ......................................................... 22 7.1.1 Write Enable (06H) .................................................................. 22 7.1.2 Write Disable (04H) ................................................................. 22 7.1.3 Read Status Register (05H or 35H or 15H) ............................. 23 7.1.4 Write Status Register (01H or 31H or 11H) ............................. 23 7.1.5 Write Enable for Volatile Status Register (50H) ....................... 24 7.2 Read Instructions......................................................................................... 25 7.2.1 Read Data (03H) ..................................................................... 25 7.2.2 Fast Read (0BH) ..................................................................... 26 7.2.3 Dual Output Fast Read (3BH) ................................................. 27 7.2.4 Quad Output Fast Read (6BH) ................................................ 28 7.2.5 Dual I/O Fast Read (BBH) ....................................................... 29 7.2.6 Quad I/O Fast Read (EBH)...................................................... 31 7.2.7 Quad I/O Word Fast Read (E7H) ............................................ 33 7.2.8 Set Burst with Wrap (77H) ....................................................... 35 7.3 ID and Security Instructions ....................................................................... 36 7.3.1 Read Manufacture ID/ Device ID (90H) ................................... 36 7.3.2 Dual I/O Read Manufacture ID/ Device ID (92H) ..................... 37 7.3.3 Quad I/O Read Manufacture ID/ Device ID (94H) ................... 38 Apr 2022 Rev 1.9 2 / 76 Contents BY25Q64AS 7.3.4 Read JEDEC ID (9FH) ............................................................ 39 7.3.5 Read Unique ID Number (4Bh) ............................................... 40 7.3.6 Deep Power-Down (B9H) ........................................................ 41 7.3.7 Release from Deep Power-Down/Read Device ID (ABH) ....... 42 7.3.8 Read Security Registers (48H) ................................................ 43 7.3.9 Erase Security Registers (44H) ............................................... 44 7.3.10 Program Security Registers (42H) ........................................... 45 7.3.11 Enable Reset (66H) and Reset Device (99H) .......................... 46 7.3.12 Read Serial Flash Discoverable Parameter (5AH) .................. 47 7.4 Program and Erase Instructions .................................................................. 52 7.4.1 Page Program (02H) ............................................................... 52 7.4.2 Quad Page Program (32H)...................................................... 53 7.4.3 Fast Page Program (F2H) ....................................................... 54 7.4.4 Sector Erase (20H) .................................................................. 55 7.4.5 32KB Block Erase (52H) ......................................................... 56 7.4.6 64KB Block Erase (D8H) ......................................................... 57 7.4.7 Chip Erase (60/C7H) ............................................................... 58 7.4.8 Erase / Program Suspend (75H) ............................................. 59 7.4.9 Erase / Program Resume (7AH).............................................. 60 8. Electrical Characteristics .......................................................... 61 8.1 8.2 8.3 8.4 8.5 8.6 8.7 Absolute Maximum Ratings ....................................................................... 61 Operating Ranges ........................................................................................ 61 Latch Up Characteristics ............................................................................. 62 Power-up Timing......................................................................................... 62 DC Electrical Characteristics ...................................................................... 63 AC Measurement Conditions ...................................................................... 65 AC Electrical Characteristics ...................................................................... 65 9. Package Information ................................................................ 69 9.1 9.2 9.3 9.4 Package 8-Pin SOP 150-mil ........................................................................ 69 Package 8-Pin SOP 208-mil ........................................................................ 70 Package 8-Pad WSON (6x5mm) ................................................................ 71 Package USON8 (4*3mm).......................................................................... 72 10. Order Information ..................................................................... 73 10.1 10.2 Valid part Numbers and Top Side Marking................................................. 74 Minimum Packing Quantity (MPQ) ........................................................... 75 11. Document Change History ....................................................... 76 Apr 2022 Rev 1.9 3 / 76 Description BY25Q64AS 1. Description The BY25Q64AS is 64M-bit Serial Peripheral Interface (SPI) Flash memory, and supports the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (/WP), and I/O3 (/HOLD). The Dual I/O data is transferred with speed of 216Mbits/s and the Quad I/O & Quad output data is transferred with speed of 432Mbits/s. The device uses a single low voltage power supply, ranging from 2.7 Volt to 3.6 Volt. Additionally, the device supports JEDEC standard manufacturer and device ID and three 256-bytes Security Registers. In order to meet environmental requirements, Boya Microelectronics offers 8-pin SOP 208mil, 8-pad WSON 6x5-mm, and other special order packages, please contacts Boya Microelectronics for ordering information. Figure 1. Logic diagram VCC SCLK SO SI /CS BY25QXX /WP /HOLD VSS Figure 2. Pin Configuration SOP8 Top View Apr 2022 /CS 1 (IO1)SO 2 8 SOP8 208mil VCC 7 /HOLD(IO3) (IO2)/WP 3 6 SCLK VSS 4 5 SI(IO0) Rev 1.9 4 / 76 Description BY25Q64AS Figure 3.1. Pin Configuration WSON 5*6mm /CS 1 (IO1)SO 2 8 VCC 7 /HOLD(IO3) Top View (IO2)/WP 3 6 SCLK VSS 4 5 SI(IO0) Figure 3.2. Pin Configuration DFN 4*3mm /CS 1 8 VCC (IO1)SO 2 7 /HOLD(IO3) SCLK Top View Apr 2022 (IO2)/WP 3 6 VSS 4 5 Rev 1.9 SI(IO0) 5 / 76 Signal Description BY25Q64AS 2. Signal Description During all operations, VCC must be held stable and within the specified valid range: VCC (min) to VCC (max). All of the input and output signals must be held High or Low (according to voltages of VIH, VOH, VIL or VOL, see Section 8.6, DC Electrical Characteristics on page 60). These signals are described next. 2.1 Input/Output Summary Table 1. Signal Names Pin Name I/O /CS I SO (IO1) I/O /WP (IO2) I/O VSS Chip Select Serial Output for single bit data Instructions. IO1 for Dual or Quad Instructions. Write Protect in single bit or Dual data Instructions. IO2 in Quad mode. The signal has an internal pull-up resistor and may be left unconnected in the host system if not used for Quad Instructions. Ground SI (IO0) I/O SCLK I /HOLD (IO3) I/O VCC Description Serial Input for single bit data Instructions. IO0 for Dual or Quad Instructions. Serial Clock Hold (pause) serial transfer in single bit or Dual data Instructions. IO3 in Quad-I/O mode. The signal has an internal pull-up resistor and may be left unconnected in the host system if not used for Quad Instructions. Core and I/O Power Supply 2.2 Chip Select (/CS) The chip select signal indicates when an instruction for the device is in process and the other signals are relevant for the memory device. When the /CS signal is at the logic high state, the device is not selected and all input signals are ignored and all output signals are high impedance. Unless an internal Program, Erase or Write Status Registers embedded operation is in progress, the device will be in the Standby Power mode. Driving the /CS input to logic low state enables the device, placing it in the Active Power mode. After Power Up, a falling edge on /CS is required prior to the start of any instruction. 2.3 Serial Clock (SCLK) This input signal provides the synchronization reference for the SPI interface. Instructions, addresses, or data input are latched on the rising edge of the SCLK signal. Data output changes after the falling edge of SCLK. 2.4 Serial Input (SI)/IO0 This input signal is used to transfer data serially into the device. It receives instructions, addresses, and data to be programmed. Values are latched on the rising edge of serial SCK clock signal. SI becomes IO0 an input and output during Dual and Quad Instructions for receiving instructions, addresses, and data to be programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK). Apr 2022 Rev 1.9 6 / 76 Signal Description BY25Q64AS 2.5 Serial Data Output (SO)/IO1 This output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of the serial SCK clock signal. SO becomes IO1 an input and output during Dual and Quad Instructions for receiving instructions, addresses, and data to be programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK). 2.6 Write Protect (/WP)/IO2 When /WP is driven Low (VIL), while the Status Register Protect bits (SRP1 and SRP0) of the Status Registers (SR2[0] and SR1[7]) are set to 0 and 1 respectively, it is not possible to write to the Status Registers. This prevents any alteration of the Status Registers. As a consequence, all the data bytes in the memory area that are protected by the Block Protect, TB, SEC, and CMP bits in the status registers, are also hardware protected against data modification while /WP remains Low. The /WP function is not available when the Quad mode is enabled (QE) in Status Register 2 (SR2[1]=1). The /WP function is replaced by IO2 for input and output during Quad mode for receiving addresses, and data to be programmed (values are latched on rising edge of the SCK signal) as well as shifting out data (on the falling edge of SCK). /WP has an internal pull-up resistance; when unconnected; /WP is at VIH and may be left unconnected in the host system if not used for Quad mode. 2.7 HOLD (/HOLD)/IO3 The /HOLD function is only available when QE=0, If QE=1, The /HOLD function is disabled, the pin acts as dedicated data I/O pin The /HOLD signal goes low to stop any serial communications with the device, but doesn’t stop the operation of write status register, programming, or erasing in progress. The operation of HOLD, need /CS keep low, and starts on falling edge of the /HOLD signal, with SCLK signal being low (if SCLK is not being low, HOLD operation will not start until SCLK being low). The HOLD condition ends on rising edge of /HOLD signal with SCLK being low (If SCLK is not being low, HOLD operation will not end until SCLK being low). The Hold condition starts on the falling edge of the Hold (/HOLD) signal, provided that this coincides with SCK being at the logic low state. If the falling edge does not coincide with the SCK signal being at the logic low state, the Hold condition starts whenever the SCK signal reaches the logic low state. Taking the /HOLD signal to the logic low state does not terminate any Write, Program or Erase operation that is currently in progress. /CS SCLK /HOLD HOLD HOLD Apr 2022 Rev 1.9 7 / 76 Signal Description BY25Q64AS 2.8 VCC Power Supply VCC is the supply voltage. It is the single voltage used for all device functions including read, program, and erase. 2.9 VSS Ground VSS is the reference for the VCC supply voltage. Apr 2022 Rev 1.9 8 / 76 Block/Sector Addresses BY25Q64AS 3. Block/Sector Addresses Table 2. Block/Sector Addresses of BY25Q64AS Memory Density Block(64k byte) Block(32k byte) Half block 0 Block 0 Half block 1 Half block 2 Block 1 Half block 3 64Mbit ： ： Half block 250 Block 126 Half block 251 Half block 252 Block 127 Half block 253 Sector 0 Sector Size(KB) 4 000000h-000FFFh ： ： ： Sector 7 4 007000h-007FFFh Sector 8 4 008000h-008FFFh ： 4 ： Sector 15 4 00F000h-00FFFFh Sector 16 4 010000h-010FFFh ： ： ： Sector 23 4 017000h-017FFFh Sector 24 4 018000h-018FFFh ： ： ： Sector 31 4 01F000h-01FFFFh ： ： ： Sector 2016 4 7E0000h-7E0FFFh Sector No. ： Address range ： ： Sector 2023 4 7E7000h-7E7FFFh Sector 2024 4 7E8000h-7E8FFFh ： ： ： Sector 2031 4 7EF000h-7EFFFFh Sector 2032 4 7F0000h-7F0FFFh ： ： ： Sector 2039 4 7F7000h-7F7FFFh Sector 2040 4 3F8000h-3F8FFFh ： ： ： Sector 2047 4 7FF000h-7FFFFFh Notes: 1. Block = Uniform Block, and the size is 64K bytes. 2. Half block = Half Uniform Block, and the size is 32k bytes. 3. Sector = Uniform Sector, and the size is 4K bytes. Apr 2022 Rev 1.9 9 / 76 SPI Operation BY25Q64AS 4. SPI Operation 4.1 Standard SPI Instructions The BY25Q64AS features a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip Select (/CS), Serial Data Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are supported. Input data is latched on the rising edge of SCLK and data shifts out on the falling edge of SCLK. 4.2 Dual SPI Instructions The BY25Q64AS supports Dual SPI operation when using the “Dual Output Fast Read” (3BH), “Dual I/O Fast Read” (BBH) and “Read Manufacture ID/Device ID Dual I/O” (92H) instructions. These instructions allow data to be transferred to or from the device at two times the rate of the standard SPI. When using the Dual SPI instruction the SI and SO pins become bidirectional I/O pins: IO0 and IO1. 4.3 Quad SPI Instructions The BY25Q64AS supports Quad SPI operation when using the “Quad Output Fast Read”(6BH), “Quad I/O Fast Read” (EBH) ,”Quad I/O word Fast Read”(E7H),”Read Manufacture ID/Device ID Quad I/O”(94H) and “Quad Page Program”(32H) instructions. These instructions allow data to be transferred to or from the device at four times the rate of the standard SPI. When using the Quad SPI instruction the SI and SO pins become bidirectional I/O pins: IO0 and IO1, and /WP and /HOLD pins become IO2 and IO3. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register to be set. Apr 2022 Rev 1.9 10 / 76 Operation Features BY25Q64AS 5. Operation Features 5.1 Supply Voltage 5.1.1 Operating Supply Voltage Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage within the specified [VCC(min), VCC(max)] range must be applied (see operating ranges of page 58). In order to secure a stable DC supply voltage, it is recommended to decouple the VCC line with a suitable capacitor (usually of the order of 10nF to 100nF) close to the VCC/VSS package pins. This voltage must remain stable and valid until the end of the transmission of the instruction and, for a Write instruction, until the completion of the internal write cycle (tW). 5.1.2 Power-up Conditions When the power supply is turned on, VCC rises continuously from VSS to VCC. During this time, the Chip Select (/CS) line is not allowed to float but should follow the VCC voltage, it is therefore recommended to connect the /CS line to VCC via a suitable pull-up resistor. In addition, the Chip Select (/CS) input offers a built-in safety feature, as the /CS input is edge sensitive as well as level sensitive: after power-up, the device does not become selected until a falling edge has first been detected on Chip Select (/CS). This ensures that Chip Select (/CS) must have been High, prior to going Low to start the first operation. 5.1.3 Device Reset In order to prevent inadvertent Write operations during power-up (continuous rise of VCC), a power on reset (POR) circuit is included. At Power-up, the device does not respond to any instruction until VCC has reached the power on reset threshold voltage (this threshold is lower than the minimum VCC operating voltage defined in operating ranges of page 58). When VCC has passed the POR threshold, the device is reset. 5.1.4 Power-down At Power-down (continuous decrease in VCC), as soon as VCC drops from the normal operating voltage to below the power on reset threshold voltage, the device stops responding to any instruction sent to it. During Power-down, the device must be deselected (Chip Select (/CS) should be allowed to follow the voltage applied on VCC) and in Standby Power mode (that is there should be no internal Write cycle in progress). 5.2 Active Power and Standby Power Modes When Chip Select (/CS) is Low, the device is selected, and in the Active Power mode. The device consumes ICC. When Chip Select (/CS) is High, the device is deselected. If a Write cycle is not currently in progress, the device then goes in to the Standby Power mode, and the device consumption drops to ICC1. Apr 2022 Rev 1.9 11 / 76 Operation Features BY25Q64AS 5.3 Hold Condition The Hold (/HOLD) signal is used to pause any serial communications with the device without resetting the clocking sequence. During the Hold condition, the Serial Data Output (SO) is high impedance, and Serial Data Input (SI) and Serial Clock (SCLK) are Don’t Care. To enter the Hold condition, the device must be selected, with Chip Select (/CS) Low. Normally, the device is kept selected, for the whole duration of the Hold condition. Deselecting the device while it is in the Hold condition, has the effect of resetting the state of the device, and this mechanism can be used if it is required to reset any processes that had been in progress. The Hold condition starts when the Hold (/HOLD) signal is driven Low at the same time as Serial Clock (SCLK) already being Low (as shown in Figure 4).The Hold condition ends when the Hold (HOLD) signal is driven High at the same time as Serial Clock (C) already being Low. Figure 4 also shows what happens if the rising and falling edges are not timed to coincide with Serial Clock (SCLK) being Low. Figure 4. Hold condition activation /CS SCLK /HOLD HOLD HOLD Apr 2022 Rev 1.9 12 / 76 Operation Features BY25Q64AS 5.4 Status Register 5.4.1 Status Register Table See Table 3 for detail description of the Status Register bits. Table 3. Status Register S23 Reserved S22 DRV1 S21 DRV0 S15 SUS1 S14 CMP S13 LB3 S12 LB2 S11 LB1 S7 SRP0 S6 BP4 S5 BP3 S4 BP2 S3 BP1 5.4.2 S20 Reserved S19 Reserved S18 Reserved S17 Reserved S16 Reserved S10 SUS2 S9 QE S8 SRP1 S2 BP0 S1 WEL S0 WIP The Status and Control Bits 5.4.2.1 WIP bit The Write in Progress (WIP) bit indicates whether the memory is busy in program/erase/write status register progress. When WIP bit sets to 1, means the device is busy in program/erase/write status register progress, when WIP bit sets 0, means the device is not in program/erase/write status register progress. 5.4.2.2 WEL bit The Write Enable Latch bit indicates the status of the internal Write Enable Latch. When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write Status Register, Program or Erase instruction is accepted. 5.4.2.3 BP4, BP3, BP2, BP1, BP0 bits The Block Protect (BP4, BP3, BP2, BP1, BP0) bits are non-volatile. They define the size of the area to be software protected against Program and Erase instructions. These bits are written with the Write Status Register instruction. When the Block Protect (BP4, BP3, BP2, BP1, BP0) bits are set to 1, the relevant memory area (as defined in Table 6 and Table 7).becomes protected against Page Program, Sector Erase and Block Erase instructions. The Block Protect (BP4, BP3, BP2, BP1, BP0) bits can be written provided that the Hardware Protected mode has not been set. The Chip Erase(CE) instruction is executed, if the Block Protect(BP2,BP1,BP0)bits are 0 and CMP=0 or The Block Protect (BP2, BP1, BP0) bits are1 and CMP=1. 5.4.2.4 SRP1, SRP0 bits The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the status register. The SRP bits control the method of write protection: software protection, hardware protection, power supply lock-down or one time programmable protection. Apr 2022 Rev 1.9 13 / 76 Operation Features BY25Q64AS 5.4.2.5 QE bit The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad operation. When the QE bit is set to 0 (Default) the /WP pin and /HOLD pin are enable. When the QE pin is set to 1, the Quad IO2 and IO3 pins are enabled. (The QE bit should never be set to 1 during standard SPI or Dual SPI operation if the /WP or /HOLD pins directly to the power supply or ground). 5.4.2.6 LB3/LB2/LB1 bit The LB bit is a non-volatile One Time Program (OTP) bit in Status Register (S13–S11) that provide the write protect control and status to the Security Registers. The default state of LB is 0, the security registers are unlocked. LB can be set to 1 individually using the Write Register instruction. LB is One Time Programmable, once they are set to 1, the Security Registers will become read-only permanently. 5.4.2.7 CMP bit The CMP bit is a non-volatile Read/Write bit in the Status Register (S14). It is used in conjunction the SEC-BP0 bits to provide more flexibility for the array protection. Please see the Status registers Memory Protection table for details. The default setting is CMP=0. 5.4.2.8 SUS1/SUS2 bit The SUS1 and SUS2 bits are read only bits in the status register2 (S15 and S10) that are set to 1 after executing an Erase/Program Suspend (75H) instruction (The Erase Suspend will set SUS1 to 1, and the Program Suspend will set the SUS2 to 1). The SUS1 and SUS2 bits are cleared to 0 by Erase/Program Resume (7AH) instruction as well as a power-down, power-up cycle. 5.4.2.9 DRV1/DRV0 The DRV1&DRV0 bits are used to determine the output driver strength for the Read instruction. DRV1, DRV0 Apr Driver Strength 00 100%(default) 01 75% 10 50% 11 25% 2022 Rev 1.9 14 / 76 Operation Features 5.4.3 BY25Q64AS Status Register Protect Table The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the Status Register. The SRP bits control the method of write protection: software protection, hardware protection, power supply lock-down or one time programmable protection. Table 4. Status Register protect table SRP1 SRP0 /WP Status Register 0 0 X Software Protected 0 1 0 0 1 1 1 0 X Power Supply Lock-Down(1) 1 1 X One Time Program(2) Hardware Protected Hardware Unprotected Description The Status Register can be written to after a Write Enable instruction, WEL=1. (Factory Default) /WP=0, the Status Register locked and cannot be written. /WP=1, the Status Register is unlocked and can be written to after a Write Enable instruction, WEL=1. Status Register is protected and cannot be written to again until the next Power-Down, Power-Up cycle. Status Register is permanently protected and cannot be written to. Notes: 1. When SRP1, SRP0= (1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to (0, 0) state. 2. The One time Program feature is available upon special order. Please contact Boya Microelectronics for details. 5.4.4 1. Write Protect Features Software Protection: The Block Protect (BP4, BP3, BP2, BP1, BP0) bits define the section of the memory array that can be read but not change. 2. Hardware Protection: /WP going low to protect the writable bits of Status Register. 3. Deep Power-Down: In Deep Power-Down Mode, all instructions are ignored except the Release from deep Power-Down Mode instruction. 4. Write Enable: The Write Enable instruction is set the Write Enable Latch bit. The WEL bit will return to reset by following situation: -Power –up -Write Disable -Write Status Register -Page Program -Sector Erase/Block Erase/Chip Erase -Software Reset Apr 2022 Rev 1.9 15 / 76 Operation Features 5.4.5 BY25Q64AS Status Register Memory Protection 5.4.5.1 Protect Table Table 5. BY25Q64AS Status Register Memory Protection (CMP=0) Status Register Content BP4 BP3 BP2 BP1 BP0 X X 0 0 0 0 0 0 0 1 0 0 0 1 0 0 0 0 1 1 0 0 1 0 0 0 0 1 0 1 0 0 1 1 0 0 1 0 0 1 0 1 0 1 0 0 1 0 1 1 0 1 1 0 0 0 1 1 0 1 0 1 1 1 0 X X 1 1 1 1 0 0 0 1 1 0 0 1 0 1 0 0 1 1 1 0 1 0 X 1 0 1 1 0 1 1 0 0 1 1 1 0 1 0 1 1 0 1 1 1 1 1 0 X 1 1 1 1 0 Apr 2022 Blocks NONE 126 to 127 124 to 127 120 to 127 112 to 127 96 to 127 64 to 127 0 to 1 0 to 3 0 to 7 0 to 15 0 to 31 0 to 63 0 to 127 127 127 127 127 127 0 0 0 0 0 Memory Content Addresses Density NONE NONE 7E0000H-7FFFFFH 128KB 7C0000H-7FFFFFH 256KB 780000H-7FFFFFH 512KB 700000H-7FFFFFH 1MB 600000H-7FFFFFH 2MB 400000H-7FFFFFH 4MB 000000H-01FFFFH 128KB 000000H-03FFFFH 256KB 000000H-07FFFFH 512KB 000000H-0FFFFFH 1MB 000000H-1FFFFFH 2MB 000000H-3FFFFFH 4MB 000000H-7FFFFFH 8MB 7FF000H-7FFFFFH 4KB 7FE000H-7FFFFFH 8KB 7FC000H-7FFFFFH 16KB 7F8000H-7FFFFFH 32KB 7F8000H-7FFFFFH 32KB 000000H-000FFFH 4KB 000000H-001FFFH 8KB 000000H-003FFFH 16KB 000000H-007FFFH 32KB 000000H-007FFFH 32KB Rev 1.9 Portion NONE Upper 1/64 Upper 1/32 Upper 1/16 Upper 1/8 Upper 1/4 Upper 1/2 Lower 1/64 Lower 1/32 Lower 1/16 Lower 1/8 Lower 1/4 Lower 1/2 ALL Top Block Top Block Top Block Top Block Top Block Bottom Block Bottom Block Bottom Block Bottom Block Bottom Block 16 / 76 Operation Features BY25Q64AS Table 6 BY25Q64AS Status Register Memory Protection (CMP=1) Status Register Content Memory Content BP4 BP3 BP2 BP1 BP0 Blocks Addresses Density Portion X X 0 0 0 ALL 000000H-7FFFFFH ALL ALL 0 0 0 0 1 0 to 125 000000H-7DFFFFH 8064KB Lower 63/64 0 0 0 1 0 0 to 123 000000H-7BFFFFH 7936KB Lower 31/32 0 0 0 1 1 0 to 119 000000H-77FFFFH 7680KB Lower 15/16 0 0 1 0 0 0 to 111 000000H-6FFFFFH 7MB Lower 7/8 0 0 1 0 1 0 to 95 000000H-5FFFFFH 6MB Lower 3/4 0 0 1 1 0 0 to 63 000000H-3FFFFFH 4MB Lower 1/2 0 1 0 0 1 2 to 127 020000H-7FFFFFH 8064KB Upper 63/64 0 1 0 1 0 4 to 127 040000H-7FFFFFH 7936KB Upper 31/32 0 1 0 1 1 8 to 127 080000H-7FFFFFH 7680KB Upper 15/16 0 1 1 0 0 16 to 127 100000H-7FFFFFH 7MB Upper 7/8 0 1 1 0 1 32 to 127 200000H-7FFFFFH 6MB Upper 3/4 0 1 1 1 0 64 to 127 400000H-7FFFFFH 4MB Upper 1/2 X X 1 1 1 NONE NONE NONE NONE 1 0 0 0 1 0 to127 000000H-7FEFFFH 8188KB L-2047/2048 1 0 0 1 0 0 to 127 000000H-7FDFFFH 8184KB L-1023/1024 1 0 0 1 1 0 to 127 000000H-7FBFFFH 8176KB L-511/512 1 0 1 0 X 0 to 127 000000H-7F7FFFH 8160KB L-255/256 1 0 1 1 0 0 to 127 000000H-7F7FFFH 8160KB L-255/256 1 1 0 0 1 0 to127 001000H-7FFFFFH 8188KB U-2047/2048 1 1 0 1 0 0 to 127 002000H-7FFFFFH 8184KB U-1023/1024 1 1 0 1 1 0 to 127 004000H-7FFFFFH 8176KB U-511/512 1 1 1 0 X 0 to 127 008000H-7FFFFFH 8160KB U-255/256 1 1 1 1 0 0 to 127 008000H-7FFFFFH 8160KB U-255/256 Apr 2022 Rev 1.9 17 / 76 Device Identification 6. BY25Q64AS Device Identification Three legacy Instructions are supported to access device identification that can indicate the manufacturer, device type, and capacity (density). The returned data bytes provide the information as shown in the below table. Table 7. BY25Q64AS ID Definition table Apr Operation Code M7-M0 ID15-ID8 ID7-ID0 9FH 90H/92H/94H ABH 68 68 40 17 16 16 2022 Rev 1.9 18 / 76 Instructions Description BY25Q64AS 7. Instructions Description All instructions, addresses and data are shifted in and out of the device, beginning with the most significant bit on the first rising edge of SCLK after /CS is driven low. Then, the one byte instruction code must be shifted in to the device, most significant bit first on SI, each bit being latched on the rising edges of SCLK. See Table 8, every instruction sequence starts with a one-byte instruction code. Depending on the instruction, this might be followed by address bytes, or by data bytes, or by both or none. /CS must be driven high after the last bit of the instruction sequence has been shifted in. For the instruction of Read, Fast Read, Read Status Register or Release from Deep Power Down, and Read Device ID, the shifted-in instruction sequence is followed by a data out sequence. /CS can be driven high after any bit of the data-out sequence is being shifted out. For the instruction of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write Enable, Write Disable or Deep Power-Down instruction, /CS must be driven high exactly at a byte boundary, otherwise the instruction is rejected, and is not executed. That is /CS must driven high when the number of clock pulses after /CS being driven low is an exact multiple of eight. For Page Program, if at any time the input byte is not a full byte, nothing will happen and WEL will not be reset. Apr 2022 Rev 1.9 19 / 76 Instructions Description BY25Q64AS Table 8. Instruction Set Table Instruction Name Write Enable Write Disable Read Status Register-1 Read Status Register-2 Read Status Register-3 Write Enable for Volatile Status Register Write Status Register -1 Write Status Register-2 Write Status Register-3 Read Data Fast Read Dual Output Fast Read Byte 1 06H 04H 05H Byte 2 Byte 3 Byte 4 Byte 5 Byte 6 (S7-S0) continuous 35H (S15-S8) continuous 15H (S23-S16) continuous 50H 01H (S7-S0) 31H (S15-S8) 11H (S23-S16) 03H 0BH 3BH A23-A16 A23-A16 A23-A16 A15-A8 A15-A8 A15-A8 A7-A0 A7-A0 A7-A0 (D7-D0) dummy dummy Next byte (D7-D0) (D7-D0)(1) Dual I/O Fast Read BBH A23-A8(2) (D7-D0)(1) Next byte Next byte Quad Output Fast Read 6BH A23-A16 A7-A0 M7-M0(2) A15-A8 A7-A0 dummy (D7-D0)(3) Quad I/O Fast Read EBH dummy(5) (D7-D0)(3) Next byte Next byte dummy(6) (D7-D0)(3) Next byte Next byte A15-A8 A15-A8 A15-A8 A15-A8 A15-A8 A15-A8 A7-A0 A7-A0 A7-A0 A7-A0 A7-A0 A7-A0 (D7-D0) (D7-D0)(3) (D7-D0) Next byte Next byte Next byte dummy dummy dummy (ID7-ID0) 90H dummy dummy 00H (MID7-MID0) 92H A23-A8 A7-A0, dummy (MID7-MID 0),(DID7-D ID0) Quad I/O Word Fast Read(7) Page Program Quad Page Program Fast Page Program Sector Erase Block Erase(32K) Block Erase(64K) Chip Erase Enable Reset Reset Set Burst with Wrap Program/Erase Suspend Program/Erase Resume Deep Power-Down Release From Deep Power-Down, And Read Device ID Release From Deep Power-Down Manufacturer/ Device ID Manufacturer/ Device ID by Dual I/O Apr 2022 N-Bytes E7H 02H 32H F2H 20H 52H D8H C7/60H 66H 99H 77H A23-A0 M7-M0(4) A23-A0 dM7-M0 (4) A23-A16 A23-A16 A23-A16 A23-A16 A23-A16 A23-A16 continuous continuous continuous continuous continuous continuous continuous continuous continuous continuous dummy(6) W7-W0 75H 7AH B9H continuous ABH ABH Rev 1.9 (ID7-ID0) continuous continuous 20 / 76 Instructions Description A23-A0, dummy BY25Q64AS dummy(10) Manufacturer/ Device ID by Quad I/O 94H continuous JEDEC ID Read Serial Flash Discoverable Parameter Erase Security Registers(8) Program Security Registers(8) Read Security Registers(8) 9FH MID7-MID0 ID15-ID8 ID7-ID0 5AH A23-A16 A15-A8 A7-A0 44H A23-A16 A15-A8 A7-A0 42H A23-A16 A15-A8 48H A23-A16 A15-A8 (MID7-MID0) (DID7-DID0) continuous Dummy D7-D0 A7-A0 (D7-D0) (D7-D0) A7-A0 dummy (D7-D0) continuous continuous continuous Notes: 1. Dual Output data IO0 = (D6, D4, D2, D0) IO1 = (D7, D5, D3, D1) 2. Dual Input Address IO0 = A22, A20, A18, A16, A14, A12, A10, A8, A6, A4, A2, A0, M6, M4, M2, M0 IO1 = A23, A21, A19, A17, A15, A13, A11, A9, A7, A5, A3, A1, M7, M5, M3,M1 3. Quad Output Data IO0 = (D4, D0,…..) IO1 = (D5, D1,…..) IO2 = (D6, D2,…..) IO3 = (D7, D3,…..) 4. Quad Input Address IO0 = A20, A16, A12, A8, A4, A0, M4, M0 IO1 = A21, A17, A13, A9, A5, A1, M5, M1 IO2 = A22, A18, A14, A10, A6, A2, M6, M2 IO3 = A23, A19, A15, A11, A7, A3, M7, M3 5. Fast Read Quad I/O Data IO0 = (x, x, x, x, D4, D0,…) IO1 = (x, x, x, x, D5, D1,…) IO2 = (x, x, x, x, D6, D2,…) IO3 = (x, x, x, x, D7, D3,…) 6. Fast Word Read Quad I/O Data IO0 = (x, x, D4, D0,…) IO1 = (x, x , D5, D1,…) IO2 = (x, x, D6, D2,…) IO3 = (x, x, D7, D3,…) 7. Fast Word Read Quad I/O Data: the lowest address bit must be 0. 8. Security Registers Address: Security Register1: A23-A16=00H, A15-A8=00010000b, A7-A0= Byte Address; Security Register2: A23-A16=00H, A15-A8=00100000b, A7-A0= Byte Address; Security Register3: A23-A16=00H, A15-A8=00110000b, A7-A0= Byte Address; 9. Dummy bits and Wraps Bits IO0 = (x, x, x, x, x, x, w4, x) IO1 = (x, x, x, x, x, x, w5, x) IO2 = (x, x, x, x, x, x, w6, x) IO3 = (x, x, x, x, x, x, x,x) 10. Address, continuous Read Mode bits, Dummy bits, Manufacture ID and Device ID IO0 = (A20, A16, A12, A8, A4, A0, M4, M0, x, x, x, x, MID4, MID0, DID4, DID0) IO1 = (A21, A17, A13, A9, A5, A1, M5, M1, x, x, x, x, MID5, MID1, DID5, DID1) IO2 = (A22, A18, A14, A10, A6, A2, M6, M2, x, x, x, x, MID6, MID2, DID6, DID2) IO3 = (A23, A19, A15, A11, A7, A3, M7, M3, x, x, x, x, MID7, MID3, DID7, DID3) 11. Security Register 0 can be used to store the Flash Discoverable Parameters, The feature is upon special order, please contact Boya Microelectronics for details. Apr 2022 Rev 1.9 21 / 76 Instructions Description BY25Q64AS 7.1 Configuration and Status Instructions 7.1.1 Write Enable (06H) See Figure 5, the Write Enable instruction is for setting the Write Enable Latch bit. The Write Enable Latch bit must be set prior to every Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register instruction and Erase/Program Security Registers instruction. The Write Enable instruction sequence: /CS goes low sending the Write Enable instruction /CS goes high. Figure 5. Write Enable Sequence Diagram /CS 0 1 2 3 4 5 6 7 SCLK Instruction SI 06H High_Z SO 7.1.2 Write Disable (04H) See Figure 6, the Write Disable instruction is for resetting the Write Enable Latch bit. The Write Disable instruction sequence: /CS goes low -> sending the Write Disable instruction -> /CS goes high. The WEL bit is reset by following condition: Power-up and upon completion of the Write Status Register, Page Program, Sector Erase, Block Erase and Chip Erase, Erase/Program Security Registers and Reset instructions. Figure 6. Write Disable Sequence Diagram /CS 0 1 2 3 4 5 6 7 SCLK Instruction SI SO Apr 2022 04H High_Z Rev 1.9 22 / 76 Instructions Description 7.1.3 BY25Q64AS Read Status Register (05H or 35H or 15H) See Figure 7 the Read Status Register (RDSR) instruction is for reading the Status Register. The Status Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in progress. When one of these cycles is in progress, it is recommended to check the Write in Progress (WIP) bit before sending a new instruction to the device. It is also possible to read the Status Register continuously. For instruction code “05H”, the SO will output Status Register bits S7~S0. The instruction code “35H”, the SO will output Status Register bits S15~S8, The instruction code “15H”, the SO will output Status Register bits S23~16. Figure 7. Read Status Register Sequence Diagram /CS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Instruction SI 05H or 35H or 15H Register 0/1/2 High_Z SO 7.1.4 7 6 MSB 5 4 Register 0/1/2 2 3 1 0 7 6 MSB 5 4 3 2 1 0 Write Status Register (01H or 31H or 11H) See Figure 8, the Write Status Register instruction allows new values to be written to the Status Register. Before it can be accepted, a Write Enable instruction must previously have been executed. After the Write Enable instruction has been decoded and executed, the device sets the Write Enable Latch (WEL). The Write Status Register instruction has no effect on S23, S20, S19, S18, S17, S16, S15, S1 and S0 of the Status Register. /CS must be driven high after the eighth bit of the data byte has been latched in. If not, the Write Status Register instruction is not executed. As soon as /CS is driven high, the self-timed Write Status Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch is reset. The Write Status Register instruction allows the user to change the values of the Block Protect (BP4, BP3, BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in Table 3. The Write Status Register instruction also allows the user to set or reset the Status Register Protect (SRP1 and SRP0) bits in accordance with the Write Protect (/WP) signal. The Status Register Protect (SRP1 and SRP0) bits and Write Protect (/WP) signal allow the device to be put in the Hardware Protected Mode. The Write Status Register instruction is not executed once the Hardware Protected Mode is entered. Figure 8. Write Status Register Sequence Diagram /CS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Status Register in Instruction SI 01H or 31H or 11H 7 6 5 4 3 2 1 0 MSB High_Z SO Apr 2022 Rev 1.9 23 / 76 Instructions Description 7.1.5 BY25Q64AS Write Enable for Volatile Status Register (50H) See Figure 9, the non-volatile Status Register bits can also be written to as volatile bits. This gives more flexibility to change the system configuration and memory protection schemes quickly without waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status Register non-volatile bits. Write Enable for Volatile Status Register instruction will not set the Write Enable Latch bit, it is only valid for the Write Status Registers instruction to change the volatile Status Register bit values. Figure 9. Write Enable for Volatile Status Register /CS 0 1 2 3 4 5 6 7 SCLK Instruction SI SO Apr 2022 50H High_Z Rev 1.9 24 / 76 Instructions Description BY25Q64AS 7.2 Read Instructions 7.2.1 Read Data (03H) See Figure 10, the Read Data Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fR, during the falling edge of SCLK. The address is automatically incremented to the next higher address after each byte of data is shifted out allowing for a continuous stream of data. This means that the entire memory can be accessed with a single command as long as the clock continues. The command is completed by driving /CS high. The whole memory can be read with a single Read Data Bytes (READ) instruction. Any Read Data Bytes (READ) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 10. Read Data Bytes Sequence Diagram /CS 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK 24-Bit Address Instruction SI 03H 23 22 21 3 2 1 0 Data Byte1 MSB High_Z SO Apr 2022 7 6 MSB Rev 1.9 5 4 3 High_Z 2 25 / 76 1 0 Instructions Description 7.2.2 BY25Q64AS Fast Read (0BH) See Figure 11, the Read Data Bytes at Higher Speed (Fast Read) instruction is for quickly reading data out. It is followed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fc, during the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Figure 11. Fast Read Sequence Diagram /CS 0 1 2 3 4 5 6 7 9 8 28 29 30 10 31 SCLK Instruction 24-Bit Address 23 22 0BH SI 21 3 2 1 0 High_Z SO /CS 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Clocks High_Z SI High_Z SO Apr 2022 Data byte 1 7 Rev 1.9 6 5 4 3 High_Z 2 1 0 26 / 76 Instructions Description 7.2.3 BY25Q64AS Dual Output Fast Read (3BH) See Figure 12, the Dual Output Fast Read instruction is followed by 3-byte address (A23-A0) and a dummy byte, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Figure 12. Dual Output Fast Read Sequence Diagram /CS 0 1 2 3 4 5 6 7 9 8 28 10 29 30 31 SCLK Instruction 24-Bit Address 3BH SI SO 23 22 21 41 42 43 3 2 1 0 High_Z /CS 32 33 34 35 36 37 38 39 40 44 45 46 47 6 4 2 0 SCLK Dummy Clocks SI 6 4 2 0 Data Byte 2 Data Byte 1 High_Z SO Apr 2022 7 5 Rev 1.9 3 1 7 5 3 1 27 / 76 High_Z High_Z Instructions Description 7.2.4 BY25Q64AS Quad Output Fast Read (6BH) See Figure 13, the Quad Output Fast Read instruction is followed by 3-byte address (A23-A0) and a dummy byte, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO3, IO2, IO1 and IO0. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Figure 13. Quad Output Fast Read Sequence Diagram /CS 0 1 3 2 4 5 6 8 7 9 28 10 29 30 31 SCLK 24-Bit Address Instruction SI (IO0) 6BH SO (IO1) High_Z /WP (IO2) High_Z /HOLD (IO3) High_Z /CS 32 33 34 35 36 37 38 39 40 3 2 1 45 46 47 21 22 23 41 42 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 6 2 6 2 6 2 6 2 7 3 Byte1 7 3 7 3 Byte3 43 44 0 SCLK SI (IO0) Dummy Clocks SO (IO1) High_Z /WP (IO2) High_Z /HOLD (IO3) High_Z Apr 2022 Rev 1.9 Byte2 3 7 Byte4 28 / 76 High_Z High_Z High_Z High_Z Instructions Description 7.2.5 BY25Q64AS Dual I/O Fast Read (BBH) See Figure 14, the Dual I/O Fast Read instruction is similar to the Dual Output Fast Read instruction but with the capability to input the 3-byte address (A23-0) and a “Continuous Read Mode” byte 2-bit per clock by SI and SO, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Dual I/O Fast Read with “continuous Read Mode” The Dual I/O Fast Read instruction can further reduce instruction overhead through setting the “continuous Read Mode ”bits (M7-4) after the inputs 3-byte address A23-A0).If the “continuous Read Mode ”bits(M5-4)=(1,0),then the next Dual I/O fast Read instruction (after CS/ is raised and then lowered) does not require the BBH instruction code. The instruction sequence is shown in the following Figure15.If the “continuous Read Mode” bits (M5-4) does not equal (1,0), the next instruction requires the first BBH instruction code, thus returning to normal operation. A “continuous Read Mode” Reset instruction can be used to reset (M5-4) before issuing normal instruction. Figure 14. Dual I/O Fast Read Sequence Diagram (Initial command or previous (M5-4)≠(1,0))) /CS 0 1 2 3 4 5 6 7 9 8 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK Instruction SI (IO0) BBH SO (IO1) High_Z 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 A23-16 A15-8 A7-0 M7-0 /CS SCLK 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 SI (IO0) 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 SO (IO1) 7 5 3 1 7 5 3 1 7 5 3 1 7 3 5 Byte 4 1 Byte 1 Apr 2022 Byte 2 Byte 3 Rev 1.9 High_Z High_Z 29 / 76 Instructions Description BY25Q64AS Figure 15. Dual I/O Fast Read Sequence Diagram (Previous command set (M5-4) =(1,0)) /CS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK SI (IO0) 6 SO (IO1) 7 /CS Apr 0 6 4 0 6 4 2 0 6 4 2 0 5 3 1 A23-16 7 5 3 1 A15-8 7 5 3 A7-0 1 7 5 3 M7-0 1 4 2 2 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 SCLK SI (IO0) 6 4 2 0 6 4 0 6 4 2 0 6 SO (IO1) 7 5 3 Byte1 1 7 5 3 1 Byte2 7 5 3 Byte3 1 7 2022 2 Rev 1.9 2 0 5 3 Byte4 1 4 30 / 76 Instructions Description 7.2.6 BY25Q64AS Quad I/O Fast Read (EBH) See Figure 16, the Quad I/O Fast Read instruction is similar to the Dual I/O Fast Read instruction but with the capability to input the 3-byte address (A23-0) and a “Continuous Read Mode” byte and 4-dummy clock 4-bit per clock by IO0, IO1, IO3, IO4, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO0, IO1, IO2, IO3. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The Quad Enable bit (QE) of Status Register must be set to enable for the Quad I/O Fast read instruction. Quad I/O Fast Read with “Continuous Read Mode” The Quad I/O Fast Read instruction can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in Figure 16, If the “Continuous Read Mode” bits (M5-4 )= (1,0), then the next Fast Read Quad I/O instruction(after /CS is raised and then lowered) does not require the EBH instruction code, The instruction sequence is shown in the followed Figure 17. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next instruction requires the first EBH instruction code, thus returning to normal operation. A “Continuous Read Mode” Reset command can also be used to reset (M5-4) before issuing normal command. Figure 16. Quad I/O Fast Read Sequence Diagram (Initial command or previous (M5-4≠(1,0))) /CS 0 1 2 3 4 5 6 7 9 8 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK Instruction SI (IO0) EBH SO (IO1) High_Z /WP (IO2) High_Z /HOLD (IO3) High_Z Apr 2022 4 0 4 0 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 6 2 6 2 6 2 6 2 6 2 6 2 7 3 A7-0 7 3 7 3 7 3 A23-16 A15-8 Rev 1.9 Dummy 7 3 Byte1 31 / 76 7 3 Byte2 Instructions Description BY25Q64AS Figure 17. Quad I/O Fast Read Sequence Diagram (Previous command set (M5-4)=(1,0))) /CS 0 SCLK SI (IO0) SO (IO1) /WP (IO2) /HOLD (IO3) 1 2 3 4 6 5 7 8 9 10 11 12 13 14 15 4 0 4 0 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 Byte1 A23-16 A15-8 A7-0 M7-0 Dummy 7 3 Byte2 Quad I/O Fast Read with “8/16/32/64-Byte Wrap Around” The Quad I/O Fast Read instruction can also be used to access a specific portion within a page by issuing a “Set Burst with Wrap” (77H) instruction prior to EBH. The “Set Burst with Wrap” (77H) instruction can either enable or disable the “Wrap Around” feature for the following EBH instructions. When “Wrap Around” is enabled, the data being accessed can be limited to either an 8, 16, 32 or 64-byte section of a 256-byte page. The output data starts at the initial address specified in the instruction, once it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap around to the beginning boundary automatically until /CS is pulled high to terminate the instruction. The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read instructions. The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the wrap around section within a page. Apr 2022 Rev 1.9 32 / 76 Instructions Description 7.2.7 BY25Q64AS Quad I/O Word Fast Read (E7H) The Quad I/O Word Fast Read instruction is similar to the Quad Fast Read instruction except that the lowest address bit (A0) must equal 0 and 2-dummy clock. The instruction sequence is shown in the followed Figure 18, the first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be set to enable for the Quad I/O Word Fast Read instruction. Quad I/O Word Fast Read with “Continuous Read Mode” The Quad I/O Word Fast Read instruction can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0) after the input 3-byte Address bits (A23-0). If the “Continuous Read Mode” bits (M5-4) = (1, 0), then the next Quad I/O Fast Read instruction (after /CS is raised and then lowered) does not require the E7H instruction code, the instruction sequence is shown in the followed Figure 19. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next instruction requires the first E7H instruction code, thus returning to normal operation. A “Continuous Read Mode” Reset command can also be used to reset (M5-4) before issuing normal command. Figure 18. Quad I/O Word Fast Read Sequence Diagram (Initial command or previous (M5-4)≠ (1,0)) /CS 0 1 2 3 4 6 5 7 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 8 SCLK SI (IO0) Instruction E7H SO (IO1) High_Z /WP (IO2) High_Z /HOLD (IO3) High_Z 4 0 4 0 4 0 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 5 1 6 2 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 A23-16 A15-8 7 3 A7-0 7 3 M7-M0 Dummy 7 3 Byte1 7 3 Byte2 7 3 Byte3 Figure 19. Quad I/O word Fast Read Sequence Diagram (Previous command set (M5-4) =(1,0)) /CS 0 SCLK SI (IO0) SO (IO1) /WP (IO2) /HOLD (IO3) 1 2022 3 4 6 5 7 8 9 10 11 12 13 14 15 4 0 4 0 4 0 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 5 1 6 2 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 A23-16 Apr 2 A15-8 A7-0 7 3 Dummy Byte1 M7-0 3 Rev 1.9 7 3 Byte2 7 3 Byte3 33 / 76 Instructions Description BY25Q64AS Quad I/O Word Fast Read with “8/16/32/64-Byte Wrap Around” in standard SPI mode The Quad I/O Fast Read instruction can also be used to access a specific portion within a page by issuing a “Set Burst with Wrap” (77H) instruction prior to E7H. The “Set Burst with Wrap” (77H) instruction can either enable or disable the “Wrap Around” feature for the following E7H instructions. When “Wrap Around” is enabled, the data being accessed can be limited to either an 8, 16, 32 or 64-byte section of a 256-byte page. The output data starts at the initial address specified in the instruction, once it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap around to the beginning boundary automatically until /CS is pulled high to terminate the instruction. The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read instructions. The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the wrap around section within a page. Apr 2022 Rev 1.9 34 / 76 Instructions Description 7.2.8 BY25Q64AS Set Burst with Wrap (77H) See Figure 20, The Set Burst with Wrap instruction is used in conjunction with ”Quad I/O Fast Read” and “Quad I/O Word Fast Read” instruction to access a fixed length of 8/16/32/64-byte section within a 256-byte page, in standard SPI mode. The Set Burst with Wrap instruction sequence:/CS goes low ->Send Set Burst with Wrap instruction ->Send24 Dummy bits ->Send 8 bits “Wrap bits”->/CS goes high. If W6-4 is set by a Set Burst with Wrap instruction, all the following “Fast Read Quad I/O” and “Word Read Quad I/O” instructions will use the W6-4 setting to access the 8/16/32/64-byte section within any page. To exit the “Wrap Around” function and return to normal read operation, another Set Burst with Wrap instruction should be issued to set W4=1. The default value of W4 upon power on is 1. W4 = 0 W4 =1 (DEFAULT) W6 , W5 Wrap Around Wrap Length Wrap Around Wrap Length 0 0 Yes 8-byte No N/A 0 1 1 1 0 1 Yes Yes Yes 16-byte 32-byte 64-byte No No No N/A N/A N/A Figure 20. Set Burst with Wrap Sequence Diagram /CS 0 1 2 3 4 5 6 7 8 9 11 10 12 13 14 15 SCLK Instruction SI (IO0) SO (IO1) x x x x x x W4 x High_Z x x x x x x x High_Z W5 x x x x x x x High_Z W6 x x x x x x x x High_Z /WP (IO2) High_Z /HOLD (IO3) High_Z Byte1 Apr 2022 High_Z 77H Rev 1.9 Byte2 Byte3 Byte4 35 / 76 Instructions Description BY25Q64AS 7.3 ID and Security Instructions 7.3.1 Read Manufacture ID/ Device ID (90H) See Figure 21, The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-Down/Device ID instruction that provides both the JEDEC assigned Manufacturer ID and the specific Device ID. The instruction is initiated by driving the /CS pin low and shifting the instruction code “90H” followed by a 24-bit address (A23-A0) of 000000H. If the 24-bit address is initially set to 000001H, the Device ID will be read first. Figure 21. Read Manufacture ID/ Device ID Sequence Diagram /CS 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Instruction SI 24-Bit Address 3 2 23 22 21 90H High_Z SO 1 /CS 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK SI SO Apr 7 2022 6 Manufacturer ID 5 4 3 2 1 0 7 Rev 1.9 6 Device ID 3 2 5 4 1 0 36 / 76 0 Instructions Description 7.3.2 BY25Q64AS Dual I/O Read Manufacture ID/ Device ID (92H) See Figure 22, the Dual I/O Read Manufacturer/Device ID instruction is an alternative to the Release from Power-Down/Device ID instruction that provides both the JEDEC assigned Manufacturer ID and the specific Device ID by Dual I/O. The instruction is initiated by driving the /CS pin low and shifting the instruction code “92H” followed by a 24-bit address (A23-A0) of 000000H. If the 24-bit address is initially set to 000001H, the Device ID will be read first. Figure 22. Dual I/O Read Manufacture ID/ Device ID Sequence Diagram /CS 0 1 2 4 3 5 6 7 9 8 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK Instruction SI (IO0) 92H SO (IO1) High_Z 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 A23-16 A15-8 A7-0 Dummy /CS SCLK 23 24 25 26 27 28 29 30 39 31 32 SI (IO0) 6 4 2 0 6 4 2 0 SO (IO1) 7 5 3 1 7 5 3 1 40 41 42 43 6 44 45 46 47 0 6 7 5 3 1 MFR ID(repeat) 7 4 2 4 2 0 High_Z High_Z MFR ID Apr 2022 Device ID MFR and Device ID (repeat) Rev 1.9 3 1 5 Device ID(repeat) 37 / 76 Instructions Description 7.3.3 BY25Q64AS Quad I/O Read Manufacture ID/ Device ID (94H) See Figure 23, the Quad I/O Read Manufacturer/Device ID instruction is an alternative to the Release from Power-Down/Device ID instruction that provides both the JEDEC assigned Manufacturer ID and the specific Device ID by quad I/O. The instruction is initiated by driving the /CS pin low and shifting the instruction code “94H” followed by a 24-bit address (A23-A0) of 000000H and4 dummy clocks. If the 24-bit address is initially set to 000001H, the Device ID will be read first. Figure 23. Quad I/O Read Manufacture ID/ Device ID Sequence Diagram /CS 0 1 2 3 4 5 6 7 9 8 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK Instruction SI (IO0) 94H SO (IO1) High_Z WP (IO2) High_Z HOLD (IO3) High_Z 4 0 4 0 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 7 3 A23-16 A15-8 A7-0 dummy dummy MFR ID Device ID /CS SCLK 23 24 25 26 27 28 29 30 31 SI (IO0) 4 0 4 0 4 0 4 0 SO (IO1) 5 1 5 1 5 1 5 1 WP (IO2) 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 HOLD (IO3) MFR ID DID ID MFR ID DID ID (repeat) (repeat) (repeat) (repeat) Apr 2022 Rev 1.9 38 / 76 Instructions Description 7.3.4 BY25Q64AS Read JEDEC ID (9FH) The JEDEC ID instruction allows the 8-bit manufacturer identification to be read, followed by two bytes of device identification. The device identification indicates the memory type in the first byte, and the memory capacity of the device in the second byte. JEDEC ID instruction while an Erase or Program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. The JEDEC ID instruction should not be issued while the device is in Deep Power-Down Mode. See Figure 24, The device is first selected by driving /CS to low. Then, the 8-bit instruction code for the instruction is shifted in. This is followed by the 24-bit device identification, stored in the memory, being shifted out on Serial Data Output, each bit being shifted out during the falling edge of Serial Clock. The JEDEC ID instruction is terminated by driving /CS to high at any time during data output. When /CS is driven high, the device is put in the Standby Mode. Once in the Standby Mode, the device waits to be selected, so that it can receive, decode and execute instructions. Figure 24. JEDEC ID Sequence Diagram /CS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK 9FH Instruction SI Manufacturer ID 7 MSB SO /CS 16 17 18 19 20 21 22 23 24 6 25 26 5 4 3 27 28 29 2 1 30 31 SCLK SI SO 7 MSB Apr 2022 Memory Type ID15-ID8 1 6 5 4 3 2 0 7 Capacity ID7-ID0 6 5 4 3 2 1 0 MSB Rev 1.9 39 / 76 0 Instructions Description 7.3.5 BY25Q64AS Read Unique ID Number (4Bh) The Read Unique ID Number instruction accesses a factory-set read-only 64-bit number that is unique to each BY25Q64 device. The ID number can be used in conjunction with user software methods to help prevent copying or cloning of a system. The Read Unique ID instruction is initiated by driving the /CS pin low and shifting the instruction code “4Bh” followed by a four bytes of dummy clocks. After which, the 64-bit ID is shifted out on the falling edge of SCLK as shown in Figure 25. Figure 25. Read Unique ID Sequence Diagram /CS SCLK 0 Mode 3 Mode 0 1 2 3 4 5 6 7 8 9 10 Instruction SI 11 12 13 14 15 16 Dummy Byte 1 17 18 19 20 21 22 23 Dummy Byte 2 4BH SO High_Z /CS 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 100 101 102 103 SCLK Dummy Byte 3 Dummy Byte 4 SI High_Z SO Apr 2022 63 MSB Rev 1.9 62 2 1 64-bit Unique Serial Number 40 / 76 0 Mode 3 Mode 0 Instructions Description 7.3.6 BY25Q64AS Deep Power-Down (B9H) Although the standby current during normal operation is relatively low, standby current can be further reduced with the Deep Power-down instruction. The lower power consumption makes the Deep Power-down (DPD) instruction especially useful for battery powered applications (see ICC1 and ICC2). The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in Figure 26. The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Deep Power down instruction will not be executed. After /CS is driven high, the power-down state will entered within the time duration of tDP. While in the power-down state only the Release from Deep Power-down / Device ID instruction, which restores the device to normal operation, will be recognized. All other Instructions are ignored. This includes the Read Status Register instruction, which is always available during normal operation. Ignoring all but one instruction also makes the Power Down state a useful condition for securing maximum write protection. The device always powers-up in the normal operation with the standby current of ICC1. Figure 26. Deep Power-Down Sequence Diagram /CS 0 1 2 3 4 5 6 7 tDP SCLK Instruction SI B9H Stand-by mode Apr 2022 Rev 1.9 Power-down mode 41 / 76 Instructions Description 7.3.7 BY25Q64AS Release from Deep Power-Down/Read Device ID (ABH) The Release from Power-Down or Device ID instruction is a multi-purpose instruction. It can be used to release the device from the Power-Down state or obtain the devices electronic identification (ID) number. See Figure 27, to release the device from the Power-Down state, the instruction is issued by driving the /CS pin low, shifting the instruction code “ABH” and driving /CS high Release from Power-Down will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal operation and other instruction are accepted. The /CS pin must remain high during the tRES1 time duration. When used only to obtain the Device ID while not in the Power-Down state, the instruction is initiated by driving the /CS pin low and shifting the instruction code “ABH” followed by 3-dummy byte. The Device ID bits are then shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in Figure 28. The Device ID value for the BY25Q64AS is listed in Manufacturer and Device Identification table. The Device ID can be read continuously. The instruction is completed by driving /CS high. When used to release the device from the Power-Down state and obtain the Device ID, the instruction is the same as previously described, and shown in Figure 28, except that after /CS is driven high it must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will resume normal operation and other instruction will be accepted. If the Release from Power-Down/Device ID instruction is issued while an Erase, Program or Write cycle is in process (when WIP equal 1) the instruction is ignored and will not have any effects on the current cycle. Figure 27. Release Power-Down Sequence Diagram /CS 1 0 2 3 4 5 6 tRES1 7 SCLK Instruction SI ABH Power-down mode Stand-by mode Figure 28. Release Power-Down/Read Device ID Sequence Diagram /CS 0 1 2 3 4 5 6 7 8 9 29 30 31 32 33 34 35 36 37 38 39 SCLK Instruction SI ABH SO High_Z 3 Dummy Bytes 23 22 2 1 MSB tRES2 0 7 MSB 6 Device ID 3 4 5 2 1 0 Deep Power-down mode Apr 2022 Rev 1.9 42 / 76 Stand-by mode Instructions Description 7.3.8 BY25Q64AS Read Security Registers (48H) See Figure 29, the Read Security Registers instruction is similar to Fast Read instruction. The instruction is followed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fC, during the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Once the A7-A0 address reaches the last byte of the register (Byte FFH), it will reset to 000H, the instruction is completed by driving /CS high. Address A23-A16 A15-A12 A11-A8 A7-A0 Security Registers 1 00H 0001 0000 Byte Address Security Registers 2 00H 0010 0000 Byte Address Security Registers 3 00H 0011 0000 Byte Address Figure 29. Read Security Registers instruction Sequence Diagram /CS 0 1 2 3 4 5 6 7 8 9 28 29 30 31 SCLK Instruction SI 48H SO High_Z 24-Bit Address 3 23 22 2 1 /CS 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Byte SI 7 5 4 3 2 1 0 Data Byte 1 SO Apr 6 7 6 MSB 2022 Rev 1.9 5 4 3 2 1 0 43 / 76 0 Instructions Description 7.3.9 BY25Q64AS Erase Security Registers (44H) The BY25Q64AS provides three 256-byte Security Registers which can be erased and programmed individually. These registers may be used by the system manufacturers to store security and other important information separately from the main memory array. See Figure 30, the Erase Security Registers instruction is similar to Sector/Block Erase instruction. A Write Enable instruction must previously have been executed to set the Write Enable Latch bit. The Erase Security Registers instruction sequence: /CS goes low sending Erase Security Registers instruction /CS goes high. /CS must be driven high after the eighth bit of the instruction code has been latched in otherwise the Erase Security Registers instruction is not executed. As soon as /CS is driven high, the self-timed Erase Security Registers cycle (whose duration is tSE) is initiated. While the Erase Security Registers cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Erase Security Registers cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch bit is reset. The Security Registers Lock Bit (LB) in the Status Register can be used to OTP protect the security registers. Once the LB bit is set to 1, the Security Registers will be permanently locked; the Erase Security Registers instruction will be ignored. Address A23-A16 A15-A12 A11-A8 A7-A0 Security Registers 1 00H 0001 0000 Byte Address Security Registers 2 00H 0010 0000 Byte Address Security Registers 3 00H 0011 0000 Byte Address Figure 30. Erase Security Registers instruction Sequence Diagram /CS 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Instruction SI Apr 2022 24-Bit Address 23 22 44H Rev 1.9 2 1 0 44 / 76 Instructions Description BY25Q64AS 7.3.10 Program Security Registers (42H) See Figure 31, the Program Security Registers instruction is similar to the Page Program instruction. It allows from 1 to 256 bytes Security Registers data to be programmed. A Write Enable instruction must previously have been executed to set the Write Enable Latch bit before sending the Program Security Registers instruction. The Program Security Registers instruction is entered by driving /CS Low, followed by the instruction code (42H), 3-byte address and at least one data byte on SI. As soon as /CS is driven high, the self-timed Program Security Registers cycle (whose duration is tPP) is initiated. While the Program Security Registers cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Program Security Registers cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch bit is reset. If the Security Registers Lock Bit (LB3/LB2/LB1) is set to 1, the Security Registers will be permanently locked. Program Security Registers instruction will be ignored. Address A23-A16 A15-A12 A11-A8 A7-A0 Security Registers 1 00H 0001 0000 Byte Address Security Registers 2 00H 0010 0000 Byte Address Security Registers 3 00H 0011 0000 Byte Address Figure 31. Program Security Registers instruction Sequence Diagram /CS 0 4 3 2 1 5 6 7 9 8 10 29 30 28 31 32 33 34 35 36 37 38 39 SCLK Instruction 24-Bit Address 23 22 MSB 42H SI 21 3 Data Byte 1 1 2 0 7 MSB 6 4 5 2 3 1 0 2079 2078 2077 2076 2075 2074 53 54 55 2073 40 41 42 43 44 45 46 47 48 49 50 51 52 2072 /CS SCLK Data Byte 2 SI 7 6 5 4 MSB Apr 2022 3 2 1 0 7 6 MSB Data Byte 3 4 3 2 5 Rev 1.9 1 0 7 6 MSB Data Byte 256 3 2 5 4 45 / 76 1 0 Instructions Description BY25Q64AS 7.3.11 Enable Reset (66H) and Reset Device (99H) Because of the small package and the limitation on the number of pins, the BY25Q64AS provides a software Reset instruction instead of a dedicated RESET pin. Once the software Reset instruction is accepted, any on-going internal operations will be terminated and the device will return to its default power-on state and lose all the current volatile settings, such as Volatile Status Register bits, Write Enable Latch (WEL) status, Program/Erase Suspend status, Continuous Read Mode bit setting (M7-M0) and Wrap Bit setting (W6-W4). To avoid accidental reset, both “Enable Reset (66h)” and “Reset (99h)” instructions must be issued in sequence. Any other commands other than “Reset (99h)” after the “Enable Reset (66h)” command will disable the “Reset Enable” state. A new sequence of “Enable Reset (66h)” and “Reset (99h)” is needed to reset the device. Once the Reset command is accepted by the device, the device will take approximately 30us to reset. During this period, no command will be accepted. The Enable Reset (66h) and Reset (99h) instruction sequence is shown in Figure 32. Data corruption may happen if there is an on-going or suspended internal Erase or Program operation when Reset command sequence is accepted by the device. It is recommended to check the BUSY bit and the SUS bit in Status Register before issuing the Reset command sequence. Figure 32. Enable Reset (66h) and Reset (99h) Command Sequence /CS 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 SCLK Instruction SI Apr Instruction 99h 66H 2022 Rev 1.9 46 / 76 7 Instructions Description BY25Q64AS 7.3.12 Read Serial Flash Discoverable Parameter (5AH) See Figure 33,The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on CFI. SFDP is a standard of JEDEC Standard No.216. Figure 33. Read Serial Flash Discoverable Parameter command Sequence Diagram /CS 0 1 2 3 4 5 6 7 8 9 28 29 30 31 SCLK Instruction SI 5AH SO High_Z 24-Bit Address 3 23 22 2 1 /CS 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Byte SI 7 5 4 3 2 1 0 Data Byte 1 SO Apr 6 7 6 MSB 2022 Rev 1.9 5 4 3 2 1 0 47 / 76 0 Instructions Description BY25Q64AS Table 9. Signature and Parameter Identification Data Values Description SFDP Signature Comment Add(H) (Byte) DW Add (Bit) Data Data 00H 07:00 53H 53H 01H 15:08 46H 46H 02H 23:16 44H 44H 03H 31:24: 50H 50H Fixed:50444653H SFDP Minor Revision Number Start from 00H 04H 07:00 00H 00H SFDP Major Revision Number Start from 01H 05H 15:08 01H 01H Number of Parameters Headers Start from 00H 06H 23:16 01 H 01 H Unused Contains 0xFFH and can never be changed 07H 31:24 FFH FFH ID number (JEDEC) 00H: It indicates a JEDEC specified header 08H 07:00 00H 00H Parameter Table Minor Revision Number Start from 0x00H 09H 15:08 00H 00H Parameter Table Major Revision Number Start from 0x01H 0AH 23:16 01H 01H Parameter Table Length (in double word) How many DWORDs in the Parameter table 0BH 31:24 09H 09H 0CH 07:00 30H 30H 0DH 15:08 00H 00H 0EH 23:16 00H 00H Parameter Table Pointer (PTP) First address of JEDEC Flash Parameter table Unused Contains 0xFFH and can never be changed 0FH 31:24 FFH FFH ID Number LSB (Manufacturer ID) It is indicates BoyaDevice manufacturer ID 10H 07:00 68H 68H Parameter Table Minor Revision Number Start from 0x00H 11 H 15:08 00H 00H Parameter Table Major Revision Number Start from 0x01H 12H 23:16 01H 01H Parameter Table Length (in double word) How many DWORDs in the Parameter table 13H 31:24 03H 03H 14H 07:00 60H 60H 15H 15:08 00H 00H 16H 23:16 00H 00H 17H 31:24 FFH FFH Parameter Table Pointer (PTP) Contains 0xFFH and can never be changed Unused Apr First address of Boya Device Flash Parameter table 2022 Rev 1.9 48 / 76 Instructions Description BY25Q64AS Table 10. Parameter Table (0): JEDEC Flash Parameter Tables Description Comment Write Granularity 00: Reserved; 01: 4KB erase; 10: Reserved; 11: not support 4KB erase 0: 1Byte, 1: 64Byte or larger Write Enable Instruction Requested for Writing to Volatile Status Registers 0: Nonvolatile status bit 1: Volatile status bit (BP status register bit) Block/Sector Erase Size Write Enable Opcode Select for Writing to Volatile Status Registers Add(H) (Byte) DW Add (Bit) Data 01:00 01b 02 1b 03 0b 30H 0: Use 50H Opcode, 1: Use 06H Opcode, Note: If target flash status register is Nonvolatile, then bits 3 and 4 must be set to 00b. Contains 111b and can never be changed E5H 04 0b 07:05 111b 15:08 20H 16 1b 18:17 00b 19 0b 0=Not support, 1=Support 20 1b (1 -4-4) Fast Read 0=Not support, 1=Support 21 1b (1 -1 -4) Fast Read 0=Not support, 1=Support 22 1b Unused 4KB Erase Opcode (1 -1 -2) Fast Read Address Bytes Number used in addressing flash array Double Transfer Rate (DTR) clocking (1 -2-2) Fast Read 31H 0=Not support, 1=Support 00: 3Byte only, 01: 3 or 4Byte, 10: 4Byte only, 11: Reserved 0=Not support, 1=Support 32H Unused Unused Flash Memory Density (1 -4-4) Fast Read Number of Wait states (1 -4-4) Fast Read Number of Mode Bits (1 -4-4) Fast Read Opcode (1 -1 -4) Fast Read Number of Wait states (1 -1 -4) Fast Read Number of Mode Bits (1 -1 -4) Fast Read Opcode (1 -1 -2) Fast Read Number of Wait states (1 -1 -2) Fast Read Number of Mode Bits (1 -1 -2) Fast Read Opcode (1 -2-2) Fast Read Number of Wait states (1 -2-2) Fast Read Number of Mode Bits (1 -2-2) Fast Read Opcode Apr 2022 00000b: Wait states (Dummy Clocks) not support 23 1b 33H 31:24 FFH 37H:34H 31:00 39H 00000b: Wait states (Dummy Clocks) not support 3BH 00000b: Wait states (Dummy Clocks) not support 3DH 07:05 010b 3FH F1H FFH 15:08 EBH 20:16 01000b 23:21 000b 31:24 6BH 04:00 01000b 07:05 000b 15:08 3BH 20:16 00010b 23:21 010b 31:24 BBH 44H EBH 08H 6BH 08H 3EH 000b: Mode Bits not support Rev 1.9 00100b 3CH 000b: Mode Bits not support 0000b: Wait states (Dummy Clocks) not support 04:00 3AH 000b:Mode Bits not support 20H 03FFFFFFH 38H 000b:Mode Bits not support Data 3BH 42H 49 / 76 BBH Instructions Description (2-2-2) Fast Read BY25Q64AS 0=not support 1=support Unused (4-4-4) Fast Read 0=not support 1=support 40H Unused 00 0b 03:01 111b 04 0b 07:05 111b EEH Unused 43H:41H 31:08 0xFFH 0xFFH Unused (2-2-2) Fast Read Number of Wait states (2-2-2) Fast Read Number of Mode Bits (2-2-2) Fast Read Opcode 45H:44H 15:00 0xFFH 0xFFH 20:16 00000b 23:21 000b 47H 31:24 FFH FFH 49H:48H 15:00 0xFFH 001 00b 0xFFH Unused (4-4-4) Fast Read Number of Wait states (4-4-4) Fast Read Number of Mode Bits (4-4-4) Fast Read Opcode Sector Type 1 Size 0 0000b: Wait states (Dummy Clocks) not support 000b: Mode Bits not support 0 0000b: Wait states (Dummy Clocks) not support Sector/block size=2^N bytes 0x00b: this sector type don’t exist Sector/block size=2^N bytes 0x00b: this sector type don’t exist Sector Type 2 erase Opcode Sector Type 3 Size Sector/block size=2^N bytes 0x00b: this sector type don’t exist Sector Type 3 erase Opcode Sector Type 4 Size Sector/block size=2^N bytes 0x00b: this sector type don’t exist Sector Type 4 erase Opcode Apr 2022 Rev 1.9 00H 20:16 4AH 000b: Mode Bits not support Sector Type 1 erase Opcode Sector Type 2 Size 46H 44H 23:21 010b 4BH 31:24 EBH EBH 4CH 07:00 0CH 0CH 4DH 15:08 20H 20H 4EH 23:16 0FH 0FH 4FH 31:24 52H 52H 50H 07:00 10H 10H 51H 15:08 D8H D8H 52H 23:16 00H 00H 53H 31:24 FFH FFH 50 / 76 Instructions Description BY25Q64AS Table 11. Parameter Table (1): Boya Device Flash Parameter Tables Description Vcc Supply Maximum Voltage Vcc Supply Minimum Voltage HW Reset# pin HW Hold# pin Deep Power Down Mode SW Reset SW Reset Opcode Program Suspend/Resume Erase Suspend/Resume Unused Wrap-Around Read mode Wrap-Around Read mode Opcode Wrap-Around Read data length Individual block lock Individual block lock bit(Volatile/Nonvolatil e) Individual block lock Opcode Individual block lock Volatile protect bit default protect status Secured OTP Comment Add(H) (Byte) DW Add (Bit) 61H:60H 63H:62H Data Data 15:00 3600H 3600H 31:16 2700H 2700H 00 0b 0=not support 1=support 01 1b 0=not support 1=support 02 1b 0=not support 1=support Should be issue Reset Enable(66H)before Reset cmd. 03 1b 11:04 99H 0=not support 1=support 12 1b 0=not support 1=support 13 1b 14 1b 15 1b 66H 23:16 77H 77H 67H 31:24 64H 64H 00 0b 01 0b 09:02 FFH 10 0b 2000H=2.000V 2700H=2.700V 3600H=3.600V 1650H=1.650V 2250H=2.250V 2350H=2.350V 2700H=2.700V 0=not support 1=support 65H:64H 0=not support 1=support 08H:support 8B wrap-around read 16H:8B&16B 32H:8B&16B&32B 64H:8B&16B&32B&64B 0=not support 1=support 0=Volatile 1=Nonvolatile 0=protect 1=unprotect 6BH:68H 0=not support 1=support 11 1b Read Lock 0=not support 1=support 12 0b Permanent Lock 0=not support 1=support 13 1b Unused 15:14 11b Unused 31:16 FFFFH Apr 2022 Rev 1.9 51 / 76 F99EH EBFCH FFFFH Instructions Description BY25Q64AS 7.4 Program and Erase Instructions 7.4.1 Page Program (02H) The Page Program instruction is for programming the memory. A Write Enable instruction must previously have been executed to set the Write Enable Latch bit before sending the Page Program instruction. See Figure 34, the Page Program instruction is entered by driving /CS Low, followed by the instruction code, 3-byte address and at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (A7-A0) are all zero). /CS must be driven low for the entire duration of the sequence. The Page Program instruction sequence: /CS goes low-> sending Page Program instruction ->3-byte address on SI ->at least 1 byte data on SI-> /CS goes high. If more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page. /CS must be driven high after the eighth bit of the last data byte has been latched in; otherwise the Page Program instruction is not executed. As soon as /CS is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the Page Program cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch bit is reset. A Page Program instruction applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table 5&6) is not executed. Figure 34. Page Program Sequence Diagram /CS 0 4 3 2 1 5 6 7 8 9 10 29 30 28 31 32 33 34 35 36 37 38 39 SCLK Instruction 24-Bit Address 23 22 21 MSB 02H SI 3 Data Byte 1 1 2 0 7 6 MSB 4 5 2 3 1 0 2079 2078 2077 2076 2075 2074 2073 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 2072 /CS SCLK Data Byte 2 7 SI 6 MSB Apr 2022 5 4 3 2 1 0 7 6 MSB Data Byte 3 5 4 3 2 Rev 1.9 1 0 7 6 MSB Data Byte 256 3 2 5 4 52 / 76 1 0 Instructions Description 7.4.2 BY25Q64AS Quad Page Program (32H) The Quad Page Program instruction is for programming the memory using for pins: IO0, IO1, IO2 and IO3. To use Quad Page Program the Quad enable in status register Bit9 must be set (QE=1). A Write Enable instruction must previously have been executed to set the Write Enable Latch bit before sending the Page Program instruction. The Quad Page Program instruction is entered by driving /CS Low, followed by the command code (32H), three address bytes and at least one data byte on IO pins. The instruction sequence is shown in Figure 35, .If more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page. /CS must be driven high after the eighth bit of the last data byte has been latched in; otherwise the Quad Page Program instruction is not executed. As soon as /CS is driven high, the self-timed Quad Page Program cycle (whose duration is tPP) is initiated. While the Quad Page Program cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Quad Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch bit is reset. A Quad Page Program instruction applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table 5&6) is not executed Figure 35. Quad Page Program Sequence Diagram /CS 0 1 2 3 4 5 6 7 30 31 32 33 34 35 36 37 38 39 8 SCLK Instruction SI (IO0) 32H SO (IO1) High_Z WP (IO2) High_Z HOLD (IO3) High_Z 24-bits address 23 22 0 1 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 Byte1 Byte2 /CS SCLK 40 41 42 43 44 45 46 47 48 535 536 537 538 539 540 541 542 543 SI (IO0) 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 SO (IO1) 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 WP (IO2) 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 7 3 Byte 5 7 3 7 3 7 3 7 3 7 3 7 3 7 3 High_Z High_Z High_Z High_Z HOLD (IO3) Apr Byte 6 2022 Byte 253 Rev 1.9 Byte 256 53 / 76 Instructions Description 7.4.3 BY25Q64AS Fast Page Program (F2H) The Fast Page Program instruction is used to program the memory. A Write Enable instruction must previously have been executed to set the Write Enable Latch bit before sending the Page Program instruction. The Fast Page Program instruction is entered by driving /CS Low, followed by the instruction code, 3-byte address and at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (A7-A0) are all zero). /CS must be driven low for the entire duration of the sequence. The Fast Page Program instruction sequence: /CS goes low ->sending Page Program instruction-> 3-byte address on SI-> at least 1 byte data on SI ->/CS goes high. The command sequence is shown in Figure 36, If more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page. /CS must be driven high after the eighth bit of the last data byte has been latched in; otherwise the Fast Page Program instruction is not executed. As soon as /CS is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the Page Program cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch bit is reset. A Fast Page Program instruction applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table 5&6) is not executed. Figure 36.Fast Page Program Sequence Diagram /CS 0 4 3 2 1 5 6 7 9 8 10 29 30 28 31 32 33 34 35 36 37 38 39 SCLK Instruction SI Data Byte 1 24-Bit Address 23 22 21 MSB F2H 3 1 2 0 7 6 MSB 4 5 2 3 1 0 2079 2078 2077 2076 2075 2074 2073 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 2072 /CS SCLK Data Byte 2 7 SI 6 MSB Apr 2022 5 4 3 2 1 0 7 6 MSB Data Byte 3 4 3 2 5 Rev 1.9 1 0 7 6 MSB Data Byte 256 3 2 5 4 54 / 76 1 0 Instructions Description 7.4.4 BY25Q64AS Sector Erase (20H) The Sector Erase instruction is for erasing the all data of the chosen sector. A Write Enable instruction must previously have been executed to set the Write Enable Latch bit. The Sector Erase instruction is entered by driving /CS low, followed by the instruction code, and 3-address byte on SI. Any address inside the sector is a valid address for the Sector Erase instruction. /CS must be driven low for the entire duration of the sequence. See Figure 37, The Sector Erase instruction sequence: /CS goes low-> sending Sector Erase instruction-> 3-byte address on SI ->/CS goes high. /CS must be driven high after the eighth bit of the last address byte has been latched in; otherwise the Sector Erase instruction is not executed. As soon as /CS is driven high, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch bit is reset. A Sector Erase instruction applied to a sector which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table 5&6) is not executed. Figure 37. Sector Erase Sequence Diagram /CS 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Instruction SI Apr 2022 24-Bit Address 23 22 20H Rev 1.9 2 1 0 55 / 76 Instructions Description 7.4.5 BY25Q64AS 32KB Block Erase (52H) The 32KB Block Erase instruction is for erasing the all data of the chosen block. A Write Enable instruction must previously have been executed to set the Write Enable Latch bit. The 32KB Block Erase instruction is entered by driving /CS low, followed by the instruction code, and 3-byte address on SI. Any address inside the block is a valid address for the 32KB Block Erase instruction. /CS must be driven low for the entire duration of the sequence. See Figure 38, the 32KB Block Erase instruction sequence: /CS goes low ->sending 32KB Block Erase instruction ->3-byte address on SI ->/CS goes high. /CS must be driven high after the eighth bit of the last address byte has been latched in; otherwise the 32KB Block Erase instruction is not executed. As soon as /CS is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch bit is reset. A 32KB Block Erase instruction applied to a block which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table 5&6) is not executed. Figure 38. 32KB Block Erase Sequence Diagram /CS 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Instruction SI Apr 2022 24-Bit Address 23 22 52H Rev 1.9 2 1 0 56 / 76 Instructions Description 7.4.6 BY25Q64AS 64KB Block Erase (D8H) The 64KB Block Erase instruction is for erasing the all data of the chosen block. A Write Enable instruction must previously have been executed to set the Write Enable Latch bit. The 64KB Block Erase instruction is entered by driving /CS low, followed by the instruction code, and 3-byte address on SI. Any address inside the block is a valid address for the 64KB Block Erase instruction. /CS must be driven low for the entire duration of the sequence. See Figure 39, the 64KB Block Erase instruction sequence: /CS goes low sending 64KB Block Erase instruction 3-byte address on SI /CS goes high. /CS must be driven high after the eighth bit of the last address byte has been latched in; otherwise the 64KB Block Erase instruction is not executed. As soon as /CS is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch bit is reset. A 64KB Block Erase instruction applied to a block which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table 5&6) is not executed. Figure 39 64KB Block Erase Sequence Diagram /CS 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Instruction SI Apr 2022 24-Bit Address 23 22 D8H Rev 1.9 2 1 0 57 / 76 Instructions Description 7.4.7 BY25Q64AS Chip Erase (60/C7H) The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in Figure 40. The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will commence for a time duration of tCE. While the Chip Erase cycle is in progress, the Read Status Register instruction may still be accessed to check the status of the WIP bit. The WIP bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to accept other Instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Chip Erase instruction is executed only if all Block Protect (BP2, BP1, and BP0) bits are 0. The Chip Erase instruction is ignored if one or more sectors are protected. Figure 40. Chip Erase Sequence Diagram /CS 0 1 2 3 4 5 6 7 SCLK Instruction SI SO Apr 2022 60/C7H High_Z Rev 1.9 58 / 76 Instructions Description 7.4.8 BY25Q64AS Erase / Program Suspend (75H) The Erase/Program Suspend instruction allows the system to interrupt a Sector or Block Erase operation, then read from or program data to any other sector/block which is not in the same big block(4Mbit). The Erase/Program Suspend instruction also allows the system to interrupt a Page Program operation and then read from any other page or erase any other sector or block. The Erase/Program Suspend instruction sequence is shown in Figure 41 The Write Status Registers instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h, 44h) are not allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If written during the Chip Erase operation, the Erase Suspend instruction is ignored. The Write Status Registers instruction (01h), and Program instructions (02h, 42h, 32h, F2h) are not allowed during Program Suspend. Program Suspend is valid only during the Page Program operation. Write status register operation can't be suspended. Figure 41. Erase/Program Suspend Command Sequence /CS 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 SCLK Instruction SI tSUS Instruction During Suspend 75H Table 12, Readable or Erasable Area of Memory While a Program Operation is Suspended Readable or Erasable Region Of Memory Array All but the Page being programmed All but the Page being programmed All but the Page being programmed Suspended operation Page Program Fast Page Program Quad Page Program Note1: If read the page being programmed, read instruction will be executed, but the data output may be wrong. Note2: If erase a sector/block that including the page being programmed, the erase instruction will be ignored. Table 13, Readable or Programmable Area of Memory While an Erase Operation is Suspended Suspended operation Sector Erase(4KB) Block Erase(32KB) Block Erase(64KB) Readable or Programmable Region Of Memory Array All but the Big Block(4Mbit) being Erased All but the Big Block(4Mbit) being Erased All but the Big Block(4Mbit) being Erased Note3: If read data from the same Big Block(4Mbit), read instruction will be executed, but the data output may be wrong. Note4: If program a page in the same sector/block, the program instruction will be ignored. Note5: Apr If program a page in other sector/block in the same big block(4Mbit), the program instruction will be executed, but it may be timeout, or the data after program may be wrong. 2022 Rev 1.9 59 / 76 Instructions Description 7.4.9 BY25Q64AS Erase / Program Resume (7AH) The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction “7AH” will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the WIP bit equals to 0. After the Resume instruction is issued the SUS bit will be cleared from 1 to 0 immediately, the WIP bit will be set from 0 to 1 within 200 ns and the Sector or Block will complete the erase operation or the page will complete the program operation. If the SUS bit equals to 0 or the WIP bit equals to 1, the Resume instruction “7Ah” will be ignored by the device. The Erase/Program Resume instruction sequence is shown in Figure 42 Figure 42. Erase/Program Resume Command Sequence /CS 0 1 2 3 4 5 6 7 SCLK Instruction Apr 2022 SI 7AH SO High_Z Rev 1.9 60 / 76 Electrical Characteristics BY25Q64AS 8. Electrical Characteristics 8.1 Absolute Maximum Ratings PARAMETERS SYMBOL Supply Voltage VCC Voltage Applied to Any Pin VIO Transient Voltage on any Pin VIOT Storage Temperature TSTG Electrostatic Discharge Voltage VESD CONDITIONS RANGE UNIT –0.5 to 4 V Relative to Ground –0.5 to 4 V