AP2302BI
20V N-Channel Enhancement Mode MOSFET
Description
The AP2302BI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 20V ID =2.3A
RDS(ON) < 56mΩ@ VGS=4.5V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP2302BI
SOT-23
A2SHB.
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Limit
Unit
VDS
Drain-source Voltage
20
V
VGS
Gate-source Voltage
±12
V
ID@ TA=25℃
Continuous Drain Current VGS @ 4.5V
2.3
A
ID@ TA=70℃
Continuous Drain Current VGS @ 4.5V
1.8
A
IDM
Pulsed Drain Current A
14
A
PD
Total Power Dissipation @ TA=25℃
0.7
W
RθJA
Thermal Resistance Junction-to-Ambient@Steady State
178
℃/ W
TJ ,TSTG
Junction and Storage Temperature Range
-55~+150
℃
1
AP2302BI RVE:3.9
永源微電子科技有限公司
AP2302BI
20V N-Channel Enhancement Mode MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
BVDSS
Drain-Source Breakdown Voltage
VGS= 0V, ID=250μA
20
21
IDSS
Zero Gate Voltage Drain Current
VDS=20V,VGS=0V,TC=25℃
1
μA
IGSS
Gate-Body Leakage Current
VGS= ±12V, VDS=0V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID=250μA
0.66
0.9
V
RDS(ON)
Static Drain-Source OnResistance
VGS= 4.5V, ID=2.0A
43
56
VGS= 2.5V, ID=1.5A
58
78
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
29
Qg
Total Gate Charge
2.9
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
0.6
tD(on)
Turn-on Delay Time
13
tr
Turn-on Rise Time
tD(off)
Turn-off Delay Time
tf
Turn-off Fall Time
IS
Maximum Body-Diode
Continuous Current
VSD
Diode Forward Voltage
0.52
Max
Units
V
mΩ
280
VDS=10V,VGS=0V,f=1MHZ
VGS=4.5V,VDS=10V,ID=3.0A
VGS=4.5V,VDD=10V,
RL=1.5Ω, RGEN=3Ω
46
pF
nC
0.4
54
ns
18
11
IS=3.0A,VGS=0V
3.0
A
1.2
V
Note:
1、Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
2、Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
2
AP2302BI RVE:3.9
永源微電子科技有限公司
AP2302BI
20V N-Channel Enhancement Mode MOSFET
Figure1. Output Characteristics
Figure3. Capacitance Characteristics
Figure5. Drain-Source on Resistance
Figure2. Transfer Characteristics
Figure4. Gate Charge
Figure6. Drain-Source on Resistance
3
AP2302BI RVE:3.9
永源微電子科技有限公司
AP2302BI
20V N-Channel Enhancement Mode MOSFET
Figure7. Safe Operation Area
Figure8. Switching wave
4
AP2302BI RVE:3.9
永源微電子科技有限公司
AP2302BI
20V N-Channel Enhancement Mode MOSFET
Attention
1,Any and all APM Microelectronics products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your APM Microelectronics representative nearest
you before using any APM Microelectronics products described or contained herein in such applications.
2,APM Microelectronics assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all APM Microelectronics
products described or contained herein.
3, Specifications of any and all APM Microelectronics products described or contained here instipulate the
performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted
in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer’s
products or equipment.
4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include
but are not limited to protective circuits and error prevention circuits for safe design, redundant
design,and structural design.
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guaranteed for volume production. APM Microelectronics believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual
property rights or other rights of third parties.
8, Any and all information described or contained herein are subject to change without notice due to
product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for
the APM Microelectronics product that you Intend to use.
5
AP2302BI RVE:3.9
永源微電子科技有限公司
AP2302BI
20V N-Channel Enhancement Mode MOSFET
Edition
Date
Change
Rve3.8
2018/1/31
Initial release
Rve3.9
2019/12/01
Reduce RDS(on)
Copyright Attribution“APM-Microelectronice”
6
AP2302BI RVE:3.9
永源微電子科技有限公司