CB6317

PRELIMINARY CB6317 2496 to 2690 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier DESCRIPTION AL CB6317 is a high-efficiency, wide instantaneous bandwidth, fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5x5 mm PA is designed for FDD and TDD 4G LTE and 5G systems operating from 2496 to 2690 MHz. The active biasing circuitry is integrated to compensate PA performance over temperature, voltage, and process variation. BLOCK DIAGRAM VCC1 NF ID EN TI A block diagram of the CB6317 is shown in Figure 1. The device package and pinout are shown in Figure 2. VBIAS PAEN VCC3 Active Bias Input Match Stage1 PA Stage2 Stage3 PA PA Output Match RFOUT CO RFIN VCC2 Figure 1. CB6317 Block Diagram FEATURES     FDD and TDD 4G LTE and 5G systems Supports 3GPP Bands 7, 38, and 41 Driver amplifier for micro-base and macro-base stations Enterprise small cell and massive MIMO BE T   Wide instantaneous signal bandwidth: 100 MHz High efficiency: PAE = 26% @ +28 dBm High linearity: +28 dBm with < -45 dBc ACLR with pre-distortion (100 MHz 5G,NR, 8.5 dB PAR signal) High gain: 34 dB Excellent input and output return loss: to 50Ω system Integrated active bias: performance compensated over temp Integrated enable On/Off function: PAEN = 1.7 to 2.5 V Single supply voltage: 5.0 V Pin-to-pin compatible PA family supporting all 3GPP bands Compact (16-pin, 5 x 5 x 0.77 mm) package (MSL3, 260℃ per JEDEC J-STD-020) TE R    APPLICATIONS   IP   CH  Chipbetter Microelectronics Inc. - 1 / 10 - www.chipbetter.com PRELIMINARY CB6317 2496 to 2690 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier 3 GND 4 VCC2 GND GND 12 VCC3 AL GND 13 NF ID EN TI 2 14 11 GND 10 GND 9 VBAS 5 RFOUT 88 6 7 GND RFIN 15 GND 1 16 PAEN GND VCC1 PIN-OUT DIAGRAM PIN ASSIGNMENTS Description Ground RF input port Pin 9 10 Name RFOUT GND Description RF output port Ground GND GND VBIAS PAEN GND GND Ground Ground Bias voltage PA enable Ground Ground 11 12 13 14 15 16 GND VCC3 GND VCC2 GND VCC1 Ground Stage 3 collector voltage Ground Stage 2 collector voltage Ground Stage 1 collector voltage CH IP BE T 3 4 5 6 7 8 Name GND RFIN TE R Pin 1 2 CO Figure 2. CB6317 Pin out (Top View) Chipbetter Microelectronics Inc. - 2 / 10 - www.chipbetter.com PRELIMINARY CB6317 2496 to 2690 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier ABSOLUTE MAXIMUM RATINGS CO NF ID EN TI AL Parameters Symbol Minimum Maximum Units RF input power (CW, 50Ω load) PIN +10 dBm Supply voltage (VCC1, VCC2, VCC3, VBIAS) VCC 5.5 V PA enable VEN 2.8 V Operating temperature TC -25 +115 °C Storage temperature TST -55 +125 °C Junction Temperature TJ +150 °C Power dissipation PD 1.3 W Device thermal resistance θJC 19.5 °C/W Electrostatic discharge: Charged Device Model (CDM) 500 V Human Body Model (HBM) 1000 V NOTE: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. ESD HANDLING: Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device. This device must be protected at all times from ESD when handling or transporting. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD handling precautions should be used at all times. RECOMMENDED OPERATING CONDITIONS Symbol VCC1, VCC2, VCC3, VBIAS PAEN TE R Parameters Supply voltage PA enable: ON OFF PA enable current Operating frequency Operating temperature IENABLE f TC Minimum 4.5 Typical 5 Maximum 5.25 Units V 1.7 2.0 0 1 2.5 0.5 12 2690 +110 V V μA MHz ℃ +25 CH IP BE T 2496 -40 Chipbetter Microelectronics Inc. - 3 / 10 - www.chipbetter.com PRELIMINARY CB6317 2496 to 2690 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier CB6317 ELECTRICAL SPECIFICATIONS1 CH IP BE T TE R CO NF ID EN TI AL Parameters Symbol Test Condition Min Typ. Max Units Transmit Mode：(VCC1 = VCC2 = VCC3 = VBIAS = 5 V, PAEN = 2.0 V, f = 2593 MHz, TC = +25 ℃, Input/Output Load = 50 Ω, Unless Otherwise Noted) Frequency f 2496 2690 MHz Small signal gain |S21| PIN = -30 dBm 33.5 34 dB Input return loss |S11| PIN = -30 dBm 28 dB Output return loss |S22| PIN = -30 dBm 8 dB Reverse isolation2 |S12| PIN = -30 dBm 50 dB ACLR @ raw dBm ACLR POUT = +28 dBm -35 dBc Output power at 1 dB gain P1dB CW, reference to small signal gain +33.5 dBm compression Output power at 3 dB gain P3dB CW, reference to small signal gain +35.5 dBm compression 2nd harmonic 2fo CW, POUT = +28 dBm -45 dBc 3rd harmonic 3fo CW, POUT = +28 dBm -45 dBc Power-added efficiency PAE CW, POUT = +28 dBm 27 % Quiescent current ICQ No RF signal 140 mA Load mismatch stress with no VCC =+5 V, CW Pout = +28 dBm 6:1 VSWR permanent degradation or failure Measured from 50% PA enable RF turn-on/turn-off time2 Ton voltage level to 90% of RF 3 us amplitude NOTE: 1. Performance is guaranteed only under the conditions listed in this table. 2. RF turn-on time is measured from the time the PA enable reaches 50% of PA enable "on" level to the time at which the RF output power achieves 90% of the average steady-state “on” level. RF turn-off time is measured from the time the PA enable reaches 50% of PA enable "on" level to the time at which the RF output power decreases to 10% of the average steady-state “on” level. Chipbetter Microelectronics Inc. - 4 / 10 - www.chipbetter.com PRELIMINARY CB6317 2496 to 2690 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier EVALUATION BOARD SCHEMATIC C9 C5 C7 C10 VCC2 C13 GND7 VCC2 GND8 GND6 RFIN GND5 GND1 8 7 6 5 4 3 2 1 PAEN VBIAS C2 VBIAS C3 VCC1 VCC2 VCC3 PAEN C11 C14 VCC3 SMA C4 CO Header 8 C8 J8 GND4 RFOUT GND3 GND2 C6 12 11 10 9 5 6 7 8 SMA VCC3 GND PAEN C1 GND_PAD VBIAS J7 17 1 2 3 4 VCC1 16 15 14 13 C12 NF ID EN TI VCC1 AL The CB6317 Evaluation Board is used to test the performance of the CB6317 PA. An Evaluation Board schematic is provided in Figure 3 CH IP BE T TE R Figure 3. CB6317 Evaluation Board Schematic Chipbetter Microelectronics Inc. - 5 / 10 - www.chipbetter.com PRELIMINARY CB6317 2496 to 2690 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier CO NF ID EN TI AL EVALUATION BOARD ASSEMBLY DRAWING Figure 4. CB6317 Evaluation Board Assembly Drawing TE R BILL OF MATERIALS Value 100pF 4.7nF 1uF 0.47uF 0.22uF 10uF Size 0402 0402 0402 0402 0402 1206 Vendor Murata Murata Murata Murata Murata Murata Part Number GRT1555C1E101JA02D GRM155R71C472KA01D GRM155R60J105KE19D GRM155R61E474KE01D GRM155C81E224KE01D GRM155R60J106ME44D CH IP BE T Component C1, C2 C4 C3 C5, C7, C8 C6 C9,C10,C11 Chipbetter Microelectronics Inc. - 6 / 10 - www.chipbetter.com PRELIMINARY CB6317 2496 to 2690 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier PCB LAND PATTERN 16X0.5mm Pin 1 Indicator 0.20X45° 16X0.67mm NF ID EN TI 9XФ0.875mm Stencil aperture size for center grund pad shuld be 80% to 100%(by area) for the solder mask opening 5.3mm Pin 1 AL 5.3mm Pin 16 0.8mm Pitch Package Outline 0.125mm Typ Stencil Aperture Top View Pin 16 5.3mm 0.6mm Pitch Pin 16 Pin 1 Indicator 0.20X45° 7X0.67 mm Pin 1 7X0.5mm 0.6 mm Pitch 5.4mm 16X0.6mm 16X0.77mm Pin 1 5.4mm Themal via array Ф0.03 mm 0.6mm Pitch improves themal performance CO 5.3 mm 0.8mm Pitch 2X1.4375 mm Package Outline Package Outline 0.8mm Pitch 0.25mm Typ Opening size of 60% to 100% of exposed center opening shown 2X1.4375 mm Solder Mask Opening Top View TE R Metallization Top View CH IP BE T Figure 7. CB6317 PCB Layout Footprint Chipbetter Microelectronics Inc. - 7 / 10 - www.chipbetter.com PRELIMINARY CB6317 2496 to 2690 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier Pin 1 Indicator CB6317 XXXXXX YYWW NF ID EN TI Part Number AL TYPICAL PART MARKING ChipBetter Lot Code Data Code: YY=Calendar Year WW=Work Week Figure 6. Typical Part Marking for the CB6317 PACKAGE DIMENSIONS (All Dimensions in mm): 16xSMT Pad Solder Mask Opening 0.2 A B C C TE R 6x1 8x2.4 BE T 4x1.2 A 0.1 Top View Bottom View Side View 0.875 0.875 0.42±0.1 0.20x45° 4XR0.05Max 0.5±0.05 0.6±0.05 IP CH 0 6x1 See Detail A 0.15 A B C Detail A SMT Pad Scale:2X 4X This Rotation 4X Rotated 180° 4X Rotated 90°CW 4X Rotated 90°CCW Pin 1 A See Detail B 0.77±0.1 Metal Pad Edges 4x1.2 4x0.4 5 (0.1) Solder Mask Edage Solder Mask Edge Pin 16 Pin 1 Indicator See Detail C 0 Top 4x0.4 Pin 1 Indicator 6x1 B 0.875 5 A B C CO 0.1 Detail B Pad Scale:2X 8X this rotation Solder Mask Edage 5XR0.05 Max 0.875 Detail C Pad Scale:2X 1X this rotation Notes: 1. Dimensions are in millimeters (unless otherwise specified). 2. Dimensions and tolerances are in accordance with ASME Y14.5M-1994 Chipbetter Microelectronics Inc. Figure 8. CB6317 Package Dimension - 8 / 10 - www.chipbetter.com PRELIMINARY CB6317 2496 to 2690 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier 0.25±0.20 Ф1 .50 + 2.00±0.10 0.1 0 4.00±0.10 5.50±0.10 12.00±0.20 NF ID EN TI 5.25±0.10 Pin 1 1.75±0.10 AL TAPE AND REEL DIMENSIONS 1.4±0.10 8.00±0.10 Ф1.50+0.10 CO 5.25±0.10 Notes: 1. Carrier tapes must meet all requirements of Chipbetter spec for tape and reel shipping. 2. Carrier tape shall be black conductive polycarbonate. 3. Cover tape shall be transparent conductive material. 4. ESD-surface resistivity shall be ≤ 1 × 1010 Ω/square per EJA, JEDEC TNR specification. 5. All measurements are in millimeters. CH IP BE T TE R Figure 9. CB6317 Tape and Reel Dimensions Chipbetter Microelectronics Inc. - 9 / 10 - www.chipbetter.com PRELIMINARY CB6317 2496 to 2690 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier CONTACT INFORMATION For the latest specifications, additional product information, worldwide sales and distribution locations: AL Web: www.chipbetter.com Tel: 0755-26654180 NF ID EN TI DISCLAIMERS ChipBetter reserves the right to make changes without further notice to specifications and product descriptions in this document to improve reliability, function or design. ChipBetter does not assume any liability arising out of the application or use of information or product described in this document. Neither does ChipBetter convey any license under its intellectual property rights nor licenses to any of circuits described in this document to any third party. The information in this document is believed to be accurate and reliable and is provided on an "as is" basis, without any express or implied warranty. Any information given in this document does not constitute any warranty of merchantability or fitness for a particular use. The operation of this product is subject to the user's implementation and design practices. ChipBetter products are not designed or intended for use in life support equipment, devices or systems, or other critical applications, and are not authorized or warranted for such use. CH IP BE T TE R CO Copyright of ChipBetter Microelectronics Co, Ltd. All rights reserved. Chipbetter Microelectronics Inc. - 10 / 10 - www.chipbetter.com