CB6318

PRELIMINARY CB6318 3300 to 3600 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier DESCRIPTION AL CB6318 is a highly efficient, wide instantaneous bandwidth, fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5x5 mm PA is designed for FDD and TDD 4G LTE and 5G systems operating from 3300 to 3600 MHz. The active biasing circuitry is integrated to compensate PA performance over temperature, voltage, and process variation. BLOCK DIAGRAM VCC1 Input Match RFIN NF ID EN TI A block diagram of the CB6318 is shown in Figure 1. The device package and pin out are shown in Figure 2. VCC2 Stage 1 VCC3 Stage 2 Stage 3 Output Match RFOUT Bias Circuits Vbias CO PAEN Figure 1. CB6318 Block Diagram FEATURES      5G and 4G FDD and TDD systems Supports 3GPP and 5G Bands 22, 42, n77, and n78 Driver amplifier for micro-base and macro-base stations Enterprise small cell and massive MIMO BE T  Wide instantaneous signal bandwidth: 100 MHz High efficiency: PAE = 22%~23% @ +28 dBm High gain: 36 dB Excellent input and output return loss: to 50Ω system Integrated active bias: performance compensated over temp Integrated enable On/Off function: PAEN = 1.7 to 3V Single supply voltage: 5.0 V Pin-to-pin compatible PA family supporting major 3GPP bands Compact (16-pin, 5 x 5 x 1.1 mm) package (MSL3, 260℃ per JEDEC J-STD-020) TE R     APPLICATIONS   CH IP  Chipbetter Microelectronics Inc. - 1 / 10 - www.chipbetter.com PRELIMINARY CB6318 3300 to 3600 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier 3 GND 4 VCC2 GND GND 12 VCC3 AL GND 13 NF ID EN TI 2 14 11 GND 10 GND 9 VBAS 5 RFOUT 88 6 7 GND RFIN 15 GND 1 16 PAEN GND VCC1 PIN-OUT DIAGRAM PIN ASSIGNMENTS Description Ground RF input port Pin 9 10 Name RFOUT GND Description RF output port Ground GND GND VBIAS PAEN GND GND Ground Ground Bias voltage PA enable Ground Ground 11 12 13 14 15 16 GND VCC3 GND VCC2 GND VCC1 Ground Stage 3 collector voltage Ground Stage 2 collector voltage Ground Stage 1 collector voltage CH IP BE T 3 4 5 6 7 8 Name GND RFIN TE R Pin 1 2 CO Figure 2. CB6318 Pin out (Top View) Chipbetter Microelectronics Inc. - 2 / 10 - www.chipbetter.com PRELIMINARY CB6318 3300 to 3600 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier ABSOLUTE MAXIMUM RATINGS CO NF ID EN TI AL Parameters Symbol Minimum Maximum Units RF input power (CW, 50Ω load) PIN +16 dBm Supply voltage (VCC1, VCC2, VCC3, VBIAS) VCC 5.5 V PA enable VEN 1.7 3 V Operating temperature TC -40 +110 °C Storage temperature TST -55 +125 °C Junction Temperature TJ +150 °C Power dissipation (TCASE = 100°C): POUT = +28 dBm PDISS_28dBm 2.3 W Device thermal resistance (TCASE = 100°C): POUT = RTH28dBm 16.5 °C/W +28 dBm Electrostatic discharge: Charged Device Model (CDM) PIN 1000 V Human Body Model (HBM) 1000 V NOTE: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. ESD HANDLING: Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device. This device must be protected at all times from ESD when handling or transporting. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD handling precautions should be used at all times. RECOMMENDED OPERATING CONDITIONS Symbol VCC1, VCC2, VCC3, VBIAS PAEN Minimum 4.75 1.7 TE R Parameters Supply voltage PA enable: ON OFF PA enable current Operating frequency Operating temperature IENABLE f TC 0 1 +25 Maximum 5.25 Units V 3 0.5 202 3600 +110 V V μA MHz ℃ CH IP BE T 3300 -40 Typical 5 Chipbetter Microelectronics Inc. - 3 / 10 - www.chipbetter.com PRELIMINARY CB6318 3300 to 3600 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier CB6318 ELECTRICAL SPECIFICATIONS1 CH IP BE T TE R CO NF ID EN TI AL Parameters Symbol Test Condition Min Typ. Max Units Transmit Mode：(VCC1 = VCC2 = VCC3 = VBIAS = 5 V, PAEN = 2.0 V, f = 2593 MHz, TC = +25 ℃, Input/Output Load = 50 Ω, Unless Otherwise Noted) Frequency f 3300 3600 MHz Small signal gain |S21| PIN = -30 dBm 33 34.8 dB Gain @ +23 dBm |S21|@ +28 dBm POUT = +28 dBm 35 36 dB Input return loss |S11| PIN = -20 dBm 14 16 dB Output return loss |S22| PIN =-20 dBm 9 10 dB Reverse isolation2 |S12| PIN =-30 dBm 58 dB ACLR @ +28 dBm ACLR POUT = +28 dBm (After DPD) -50 -47 dBc Output power at 1 dB gain CW, reference to small signal P1dB +34 +35 dBm Compression2 gain (Pin= -30dBm) Output power at 3 dB gain CW, reference to small signal P3dB +35 +36 dBm Compression2 gain (Pin= -30dBm) 2nd harmonic 2fo CW, POUT = +28 dBm -49 -42 dBc 3rd harmonic 3fo CW, POUT = +28 dBm -50 dBc Power-added efficiency PAE CW, POUT = +28 dBm 20 22 % Quiescent current ICQ No RF signal 102 mA Measured from 50% PA enable RF turn-on/turn-off time3 Ton voltage level to 90% of RF