LM385M3-2.5/TR

LM385 Micropower Voltage Reference Diodes TO-92 The LM385 series are micropower two-terminal bandgap voltage regulator diodes. Designed to operate over a wide current range of 10 mA to 20 mA, these devices feature exceptionally low dynamic impedance, low noise and stable operation over time and temperature. Tight voltage tolerances are achieved by on-chip trimming. The large dynamic operating range enables these devices to be used in applications with widely varying supplies with excellent regulation. Extremely low operating current make these devices ideal for micropower circuitry like portable instrumentation, regulators and other analog circuitry where extended battery life is required. Cathode N.C. 1 2 3 Anode Cathode N.C. Anode The LM385 is also available in a surface mount plastic package in voltages of 1.235 V and 2.500 V. SOP-8 N.C. 1 8 Cathode N.C. 2 7 N.C. N.C. 3 6 N.C. Anode 4 5 N.C. Features •Operating Current from 10 mA to 20 mA •1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades •Low Temperature Coefficient •1.0 W Dynamic Impedance •Surface Mount Package Available •Pb-Free Packages are Available Cathode 10 k 360 k Open for 1.235 V Standard Application 1.5 V Battery 600 k + - 3.3 k 1.235 V 8.45 k LM385-1.2 74.3 k Open for 2.5 V 600 k 425 k ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 500 W 600 k 100 k Anode Figure 1. Representative Schematic Diagram http://www.hgsemi.com.cn 1 2014 JUN LM385 MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Rating Symbol Value Unit IR 30 mA Forward Current IF 10 mA Operating Ambient Temperature Range TA Reverse Current °C LM385 0 to +70 Operating Junction Temperature TJ +150 °C Storage Temperature Range Tstg -65 to + 150 °C Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) Charged Device Model (CDM) ESD V 4000 400 2000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) LM385 Characteristic Symbol Reverse Breakdown Voltage (IRmin v IR v 20 mA) V(BR)R LM385-1.2 TA = Tlow to Thigh (Note 1) Minimum Operating Current TA = 25°C TA = Tlow to Thigh (Note 1) Min Typ Max 1.223 1.210 1.205 1.192 1.235 1.235 - 1.247 1.260 1.260 1.273 - 8.0 - 15 20 - - 1.0 1.5 20 25 - 0.6 - - 80 - - 60 - - 20 - 2.462 2.436 2.425 2.400 2.5 2.5 - 2.538 2.564 2.575 2.600 - 13 - 20 30 V mA IRmin DV(BR)R Reverse Breakdown Voltage Change with Current IRmin v IR v 1.0 mA, TA = +25°C TA = Tlow to Thigh (Note 1) 1.0 mA v IR v 20 mA, TA = +25°C TA = Tlow to Thigh (Note 1) Reverse Dynamic Impedance IR = 100 mA, TA = +25°C mV W Z DV(BR)/DT Average Temperature Coefficient 10 mA v IR v 20 mA, TA = Tlow to Thigh (Note 1) Wideband Noise (RMS) IR = 100 mA, 10 Hz v f v 10 kHz n Long Term Stability IR = 100 mA, TA = +25°C ± 0.1°C S Reverse Breakdown Voltage (IRmin v IR v 20 mA) Minimum Operating Current TA = 25°C TA = Tlow to Thigh (Note 1) ppm/°C mV ppm/kHR V(BR)R LM385-2.5 TA = Tlow to Thigh (Note 1) IRmin Unit V mA Tlow = 0°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5 Thigh =+70°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5 http://www.hgsemi.com.cn 2 2014 JUN LM385 ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) LM385 Characteristic Symbol Reverse Breakdown Voltage Change with Current IRmin v IR v 1.0 mA, TA = +25°C TA = Tlow to Thigh (Note 2) 1.0 mA v IR v 20 mA, TA = +25°C TA = Tlow to Thigh (Note 2) DV(BR)R Reverse Dynamic Impedance IR = 100 mA, TA = +25°C Average Temperature Coefficient 20 mA v IR v 20 mA, TA = Tlow to Thigh (Note 2) Min Typ Max - - 2.0 2.5 20 25 - 0.6 - - 80 - - 120 - - 20 - mV W Z DV(BR)/DT Wideband Noise (RMS) IR = 100 mA, 10 Hz v f v 10 kHz n Long Term Stability IR = 100 mA, TA = +25°C ± 0.1°C S Unit ppm/°C mV ppm/kHR Tlow = 0°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5 Thigh =+70°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5 http://www.hgsemi.com.cn 3 2014 JUN LM385 IR, REVERSE CURRENT (A) μ 100 10 TA = +85°C 1.0 +25°C 0.1 0 0.2 -40°C 0.4 0.6 0.8 1.0 V(BR), REVERSE VOLTAGE (V) 1.2 1.4 ΔV(BR)R, REVERSE VOLTAGE CHANGE (mV) TYPICAL PERFORMANCE CURVES FOR lm385 10 8.0 TA = +85°C 6.0 +25°C 4.0 -40°C 2.0 0 -2.0 0.01 0.1 Figure 2. Reverse Characteristics 1.0 10 IR, REVERSE CURRENT (mA) 100 Figure 3. Reverse Characteristics 1.2 V(BR)R, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 1.250 1.0 TA = -40°C 0.8 0.6 +25°C +85°C 0.4 0.2 0 0.01 1.0 10 IF, FORWARD CURRENT (mA) -50 √ Figure 4. Forward Characteristics -25 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) 100 125 Figure 5. Temperature Drift 1.50 1.25 OUTPUT (V) 750 Hz) 1.220 100 875 e n , NOISE (nV/ 1.230 1.210 0.1 IR = 100 mA 1.240 625 500 Input 100 k 1.00 0.75 Output 0.50 DUT 0.25 375 0 INPUT (V) 250 125 0 10 100 1.0K f, FREQUENCY (Hz) 10K 100k Figure 6. Noise Voltage http://www.hgsemi.com.cn 10 5.0 0 0 0.1 0.2 0.3 0.6 0.7 t, TIME (ms) 0.8 0.9 1.0 1.1 Figure 7. Response Time 4 2014 JUN LM385 IR, REVERSE CURRENT (A) μ 100 10 TA = +85°C +25°C 1.0 -40°C 0.1 0 0.5 1.0 1.5 2.0 2.5 V(BR), REVERSE VOLTAGE (V) 3.0 3.5 ΔV(BR)R, REVERSE VOLTAGE CHANGE (mV) TYPICAL PERFORMANCE CURVES FOR LM385-2.5 10 TA = +85°C 8.0 6.0 +25°C 2.0 0 -2.0 0.01 0.1 Figure 8. Reverse Characteristics V(BR)R, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 1.0 TA = -40°C 0.8 0.6 +85°C +25°C 0.2 0 0.01 2.520 1.0 10 IF, FORWARD CURRENT (mA) 2.500 2.490 2.480 2.470 2.460 100 -50 Figure 10. Forward Characteristics -25 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) 100 125 Figure 11. Temperature Drift 3.00 2.50 √Hz) OUTPUT (V) 1500 1250 e n , NOISE (nV/ 100 IR = 100 mA 2.510 2.450 0.1 1.0 10 IR, REVERSE CURRENT (mA) Figure 9. Reverse Characteristics 1.2 0.4 -40°C 4.0 1000 Input 100 k 2.00 1.50 Output 1.00 DUT 0.50 750 0 INPUT (V) 500 250 0 10 100 1.0K f, FREQUENCY (Hz) 10K 100k Figure 12. Noise Voltage http://www.hgsemi.com.cn 10 5.0 0 0 0.1 0.2 0.3 0.6 0.7 t, TIME (ms) 0.8 0.9 1.0 1.1 Figure 13. Response Time 5 2014 JUN LM385 Important statement: Huaguan Semiconductor Co,Ltd. reserves the right to change the products and services provided without notice. Customers should obtain the latest relevant information before ordering, and verify the timeliness and accuracy of this information. Customers are responsible for complying with safety standards and taking safety measures when using our products for system design and machine manufacturing to avoid potential risks that may result in personal injury or property damage. Our products are not licensed for applications in life support, military, aerospace, etc., so we do not bear the consequences of the application of these products in these fields. Our documentation is only permitted to be copied without any tampering with the content, so we do not accept any responsibility or liability for the altered documents. http://www.hgsemi.com.cn 6 2014 JUN