SSP61CN2002MR

SSP61C series Low Power Voltage Detector Features  Low power consumption  High input voltage (up to 8V)  Low temperature coefficient  Output voltage accuracy: tolerance ±1% or ±2%  Built-in hysteresis characteristic  SOT23-3 and SOT23 package Applications  Battery checkers  Microcomputer reset  Level selectors  Battery memory backup  Power failure detectors  Non-volatile RAM signal storage protectors General Description The SSP61C series devices are a set of three in CMOS technology. Each voltage detector in the series detects a particular fixed voltage ranging inverter or NMOS open drain). CMOS technology ensures low power consumption. Although designed primarily as fixed voltage detectors, these devices can be used with external PR O from 0.9V to 5.0V. The voltage detectors consist of IN terminal low power voltage detectors implemented hysteresis circuit, and an output driver (CMOS a high-precision and low power consumption components to detect user specified threshold standard voltage source as well as a comparator, voltages. Selection Table Part No. Hys. Width Output Tolerance 0.9V 4% CMOS ±1% or ±2% SI SSP61CC0902MR Det. Voltage SSP61CN0902MR 0.9V 4% NMOS ±1% or ±2% SSP61CC1002MR 1.0V 4% CMOS ±1% or ±2% SSP61CN1002MR 1.0V 4% NMOS ±1% or ±2% SSP61CC1102MR 1.1V 4% CMOS ±1% or ±2% SSP61CN1102MR 1.1V 4% NMOS ±1% or ±2% SSP61CC1202MR 1.2V 4% CMOS ±1% or ±2% SSP61CN1202MR 1.2V 4% NMOS ±1% or ±2% … … 4% … ±1% or ±2% SSP61CC5002MR 5.0V 4% CMOS ±1% or ±2% SSP61CN5002MR 5.0V 4% NMOS ±1% or ±2% Ver1.2 1 Package SOT23-3 SOT23 Shanghai Siproin Microelectronics Co. SSP61C series Low Power Voltage Detector Order Information SSP61C①②③④⑤⑥⑦ Designator ②③ ④⑤ ⑥ ⑦ Description C CMOS output N NMOS output VOUT Output Voltage(0.9~5.0V) 02 ±2% accuracy 01 ±1% accuracy M Package:SOT23-3 N Package:SOT23 R RoHS / Pb Free G Halogen Free SI PR O Block Diagram IN ① Symbol Typical Application Circuits Ver1.2 2 Shanghai Siproin Microelectronics Co. SSP61C series Low Power Voltage Detector Output Table & Curve VDD>VDET(+) Hi-Z VDD≤VDET(-) VSS PR O IN VDD VOUT SI Pin Assignment Ver1.2 3 Shanghai Siproin Microelectronics Co. SSP61C series Low Power Voltage Detector SI PR O IN Marking Rule Ver1.2 4 Shanghai Siproin Microelectronics Co. SSP61C series Low Power Voltage Detector Absolute Maximum Ratings Supply Voltage ................................-0.3V to 8V Storage Temperature ..................-50℃ to 125℃ Operating Temperature .................-40℃ to 85℃ Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum Ratings” may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. Thermal Information Symbol Parameter Package Max. θJA Thermal Resistance (Junction to Ambient) (Assume no ambient airflow, no heat sink) SOT23-3 500 SOT23-3 0.20 PD Power Dissipation Unit ℃/W IN W PR O Note: PD is measured at Ta= 25℃ Electrical Characteristics VDF=0.8V~5.0V Ta=25℃ Parameter Test Conditions Min. Typ. Max. Unit VDET Detection Voltage VDF=0.8V~5.0V VDF*0.98 VDF VDF*1.02 V VHYS Hysteresis Width - 0.02*VDET 0.05*VDET 0.10*VDET V Vin=1.5V - 0.7 2.3 Vin=2.0V - 0.8 2.7 Vin=3.0V - 0.9 3.0 Vin=4.0V - 1.0 3.2 Vin=5.0V - 1.1 3.6 SI Symbol IDD Operating Current μA VDD Operating Voltage - - 0.7 - 10 V IOL Output Sink Current 2V VOUT=0.2V 0.5 1 - mA ∆VDET VDF ∆Ta Temperature - ±100 - ppm/℃ Ver1.2 Coefficient - -25℃