S8550-2TY

S8550 SOT-23 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) SOT-23 FEATURES z Complimentary to S8050 z Collector Current: IC=-0.5A 1. BASE MARKING: 2TY 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V -0.5 A IC Collector Current-Continuous PC Collector Power Dissipation 0.3 W Thermal Resistance From Junction To Ambien 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Symbol Test conditions Typ Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 μA Collector cut-off current ICEO VCB=-20V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-3V, IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-50mA 120 hFE(2) VCE=-1V, IC=-500mA 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 V 400 DC current gain fT Transition frequency VCE=-6V, IC=-20mA f=30MHz 150 MHz CLASSIFICATION OF hFE (1) Rank L H J Range 120-200 200-350 300-400 http://www.microdiode.com Rev:2025A3 Page :1 S8550 Typical Characteristics IC -90 VCE —— hFE -400uA COMMON EMITTER Ta=25℃ -80 (mA) -60 Ta=100℃ -280uA -240uA -50 -200uA -40 -160uA -30 -120uA Ta=25℃ 100 -80uA -20 IB=-40uA -10 COMMON EMITTER -0 VCE=-1V 10 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VBEsat —— -10 -100 COLLECTOR CURRENT IC 100 T a= -10 VCE (V) VCEsat -500 2 5℃ T a= -800 -1 -12 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1200 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) IC -320uA DC CURRENT GAIN hFE COLLECTOR CURRENT -70 IC -360uA —— 500 ℃ —— C -500 I (mA) IC -100 0℃ 10 T a= ℃ 25 T a= β=10 β=10 -10 -400 -1 -10 -100 COLLECTOR CURRENT IC —— -100 COLLECTOR CURRENT VBE fT —— IC IC fT -100 TRANSITION FREQUENCY T =2 5℃ a -10 100 COMMON EMITTER VCE=-6V COMMON EMITTER VCE=-1V Ta=25℃ 10 -1 -0 -300 -600 -900 -1 -1200 -10 Cob/Cib —— VCB/VEB (pF) Cib Cob CAPACITANCE 10 PC 400 COLLECTOR POWER DISSIPATION PC (mW) 50 -100 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) C -500 (mA) (MHz) 400 T =1 00 ℃ a COLLECTOR CURRENT -10 (mA) IC (mA) -500 IC -1 -500 f=1MHz IE=0/IC=0 —— IC (mA) Ta 300 200 100 Ta=25 ℃ 0 1 -0.1 -1 REVERSE VOLTAGE http://www.microdiode.com -10 V (V) -20 0 25 50 75 100 AMBIENT TEMPERATURE Rev:2025A3 125 Ta 150 (℃) Page :2 S8550 Outlitne Drawing SOT-23 Package Outline Dimensions 1 e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.65 1.40 0.20 0.00 0.30 0.55 0.20 0.08 2.70 3.10 1.15 1.65 2.80 2.10 1.70 2.10 0.15 0.50 0.35 0° 0.70 12° Note: 1. Controlling dimension:in/millimeters. 2. General tolerance: ±0.05mm. 3. The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 http://www.microdiode.com inches mm Rev:2025A3 Page :3 S8550 SOT-23 Tape and Reel Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film,adhesive laye,sealant, and anti-static sprayed agent.These reeled parts In standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). 3000 pcs http://www.microdiode.com 7 Inch 45,000 pcs 190×190×190 180,000 pcs 400×400×220 Rev:2025A3 Page :4