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S8550-2TY

S8550-2TY

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SOT-23

  • 描述:

    三极管 PNP Ic=500mA Vceo=25V hfe=120~400 P=300mW SOT23

  • 数据手册
  • 价格&库存
S8550-2TY 数据手册
S8550 SOT-23 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) SOT-23 FEATURES z Complimentary to S8050 z Collector Current: IC=0.5A 1. BASE MARKING: 2TY 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V -0.5 A 0.3 W IC Collector Current-Continuous PC Collector Power Dissipation Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Symbol ol Test conditions Typ Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 μA Collector cut-off current ICEO VCB=-20V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-3V, IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-50mA 120 hFE(2) VCE=-1V, IC=-500mA 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 V 400 DC current gain fT Transition frequency VCE=-6V, IC=-20mA f=30MHz 150 MHz CLASSIFICATION OF hFE (1) Rank L H J Range 120-200 200-350 300-400 DN:T21525A0 http://www.microdiode.com Rev:2021A0 Page :1 S8550 IC —— VCE Fig.1 COLLECTOR CURRENT IC (mA) -100 COMMON EMITTER Ta=25℃ -400uA -360uA -80 -320uA -280uA -60 -240uA -200uA -40 -160uA -120uA -20 -80uA IB=-40uA -0 -4 -8 COLLECTOR- -12 COLLECTOR POWER DISSIPATION Pc (mW) Typical Characteristics Fig.2 200 0 25 Fig.4 Cob / Cib —— VCB / VEB 10 Cob 1 0.1 -0.1 -1 -10 -20 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) f=1MHz IE=0/ Ic=0 Ta=25 ℃ Cib CAPACITANCE C (pF) 100 150 VCEsat —— IC -100 -10 Τα2 =5℃ -1 β= 10 -0.1 -1 -10 -100 -1000 IC , COLLECTOR CURRENT (mA) REVERSE BIAS VOLTAGE V (V) Fig.6 Fig.5 hFE--Ic 400 VBEsat —— IC BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -1.6 300 200 100 COMMON EMITTER VCE=-1V 10 -0.1 -1.2 Τα2 =5℃ -0.8 -0.4 β= 10 -0 -100 -10 -1 -1 -500 IC , COLLECTOR CURRENT (mA) Fig.7 -10 -100 -500 -600 IC , COLLECTOR CURRENT (mA) Fig.8 IC —— VBE -1000 fT —— IC 300 VCE=-6V Ta=25℃ TRANSITION FREQUENCY fT (MHz) VCE=-5V COLLECTOR CURRENT IC (mA) 125 -1000 100 DC CURRENT GAIN hFE 75 50 AMBIENT TEMPERATURE Ta ( )℃ EMITTER VOLTAGE VCE (V) Fig.3 PC —— Ta 400 -100 Ta=100℃ -10 Ta=25℃ -1 -0.1 -0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMMITER VOLTAGE VBE (V) http://www.microdiode.com -1.2 200 100 0 -0 -50 -100 -150 IC , COLLECTOR CURRENT (mA) Rev:2021A0 Page :2 S8550 Outlitne Drawing SOT-23 Package Outline Dimensions e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Note: 1. Controlling dimension:in/millimeters. 2. General tolerance: ±0.05mm. 3. The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2021A0 Page :3 S8550 SOT-23 Tape and Reel Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film,adhesive laye,sealant, and anti-static sprayed agent.These reeled parts In standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). 3000 pcs http://www.microdiode.com 7 Inch 45,000 pcs 203×203×195 180,000 pcs 438×438×220 Rev:2021A0 Page :4
S8550-2TY 价格&库存

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S8550-2TY
  •  国内价格
  • 100+0.05562
  • 1000+0.04623
  • 3000+0.03597
  • 9000+0.03284
  • 51000+0.03014
  • 99000+0.02862

库存:116922

S8550-2TY
  •  国内价格
  • 1+0.03408
  • 30+0.03288
  • 100+0.03048
  • 500+0.02808
  • 1000+0.02688

库存:2606