BC817-40

UMW R %& UMW BC817 SOT-23 Plastic-Encapsulate Transistors 62 7     TRANSISTOR (NPN)  )($785(6 1. BASE 2. EMITTER For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) z z z z z 3. COLLECTOR 0$;,0805$7,1*67a ℃XQOHVVRWKHUZLVHQRWHG  9DOXH 8QLW 9&%2 6\PERO Collector-Base Voltage 3DUDPHWHU 50 V 9&(2 Collector-Emitter Voltage 45 V 9(%2 Emitter-Base Voltage 5 V ,& Collector Current -Continuous 0.5 A 3& Collector Power Dissipation 0.3 W 7M Junction Temperature 150 ℃ 7VWJ Storage Temperature -55-150 ℃  (/(&75,&$/&+$5$&7(5,67,&67a ℃XQOHVVRWKHUZLVHVSHFLILHG           3DUDPHWHU  6\PERO   7HVW FRQGLWLRQV  0in Typ  0ax Unit &ROOHFWRUEDVHEUHDNGRZQYROWDJH VCBO IC= 10μA, IE=0 50 V &ROOHFWRUHPLWWHUEUHDNGRZQYROWDJH VCEO IC= 10mA, IB=0 45 V (PLWWHUEDVHEUHDNGRZQYROWDJH VEBO IE= 1μA, IC=0 5 V &ROOHFWRUFXWRIIFXUUHQW ICBO VCB= 45 V , IE=0 0.1 μA (PLWWHUFXWRIIFXUUHQW IEBO VEB= 4V, IC=0 0.1 μA hFE(1) VCE= 1V, IC= 100mA 100 hFE(2) VCE= 1V, IC= 500mA 40 '&FXUUHQWJDLQ                        600 &ROOHFWRUHPLWWHUVDWXUDWLRQYROWDJH VCE(sat) IC= 500mA, IB= 50mA 0.7 V %DVHHPLWWHUVDWXUDWLRQYROWDJH VBE(sat) IC= 500mA, IB= 50mA 1.2 V 1.2 V %DVHHPLWWHUYROWDJH VBE VCE= 1 V, IC= 500mA &ROOHFWHUFDSDFWLDQFH Cob VCB=10V ,f=1MHz 7UDQVLWLRQIUHTXHQF\ fT VCE= 5 V, IC= 10mA f=100MHz 10 pF 100 MHz  &/$66,),&$7,212) hFE  5DQN %& %& %& 5DQJH     0DUNLQJ $ % & www.umw-ic.com 1 友台半导体有限公司 UMW R UMW BC817 SOT-23 Plastic-Encapsulate Transistors Static Characteristic 0.9mA 240 0.8mA IC 200 COMMON EMITTER Ta=25℃ o 0.7mA 0.6mA 160 0.5mA 120 0.4mA 0.3mA 80 Ta=100 C 400 DC CURRENT GAIN (mA) 1mA COLLECTOR CURRENT hFE —— IC 500 hFE 280 300 o Ta=25 C 200 0.2mA 40 VCE= 1V IB=0.1mA 100 0 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE VCE 14 1 16 VBEsat —— IC BASE-EMITTER SATURATION VOLTAGE VBEsat (V) β=10 1.0 0.8 Ta=25℃ 0.6 Ta=100℃ 500 100 VCEsat —— 0.4 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1.2 10 COLLECTOR CURRENT (V) IC (mA) IC β=10 0.3 0.2 Ta=100℃ 0.1 0.4 Ta=25℃ 0.2 0.1 1 10 COLLECTOR CURRENT IC 500 —— IC 0.0 0.1 500 100 1 (mA) 10 100 COLLECTOR CURRENT VBE Cob / Cib 100 —— IC VCB / VEB f=1MHz IE=0 / IC=0 IC (mA) 50 o Ta=25 C (pF) 100 Cib C COLLECTOR CURRENT o CAPACITANCE Ta=100 C 10 Ta=25℃ 500 (mA) 10 1 Cob VCE=1V 0.1 0.3 1 0.4 0.5 0.6 0.7 BASE-EMITTER VOLTAGE fT —— 0.9 1.0 0 IC Pc 0.4 (MHz) 100 TRANSITION FREQUENCY fT 5 10 REVERSE VOLTAGE VBE(V) COLLECTOR POWER DISSIPATION Pc (W) 300 0.8 —— V (V) Ta 0.3 0.2 0.1 VCE=5V o Ta=25 C 10 1 COLLECTOR CURRENT www.umw-ic.com 0.0 60 10 IC 0 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW BC817 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司