SS8050

UMW R UMW SS8050 SOT-23 Plastic-Encapsulate Transistors SOT-23 SS8050 TRANSISTOR (NPN) 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Collector cut-off current ICEO VCB=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE=1V, IC= 100mA 120 hFE(2) VCE=1V, IC= 800mA 40 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V fT Transition frequency VCE=10V, IC= 50mA f=30MHz 100 MHz CLASSIFICATION OF hFE(1) Rank Range www.umw-ic.com L H J 120-200 200-350 300-400 1 友台半导体有限公司 UMW R UMW SS8050 SOT-23 Plastic-Encapsulate Transistors Static Characteristic 140 hFE 100 350uA 80 300uA 250uA 60 200uA 40 IC Ta=100℃ 400uA DC CURRENT GAIN (mA) IC COLLECTOR CURRENT 450uA —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 500uA 120 hFE 1000 150uA 300 Ta=25℃ 100 30 100uA 20 IB=50uA 10 0 0.0 0.5 1.0 1.5 2.0 COLLECTOR-EMITTER VOLTAGE VCEsat 1 Ta=100℃ Ta=25℃ 30 VBEsat 1.2 300 100 100 30 COLLECTOR CURRENT IC —— 10 3 (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1000 VCE 2.5 10 1000 1500 300 IC (mA) IC —— 1.0 Ta=25℃ 0.8 Ta=100℃ 0.6 0.4 3 β=10 β=10 0.2 1 1 10 3 100 30 COLLECTOR CURRENT VBE 1500 1000 300 IC 1 1000 1500 30 10 3 (mA) 100 COLLECTOR CURRENT —— IC Cob/ Cib 200 (mA) IC —— VCB/ VEB f=1MHz IE=0/IC=0 100 (pF) (mA) C 30 Ta=25℃ 10 Cob 10 COMMON EMITTER VCE=1V 0.4 0.6 fT 0.8 —— 1.0 VBE 1 0.1 1.2 REVERSE VOLTAGE IC PC 350 300 100 30 10 3 3 1 0.3 (V) COLLECTOR POWER DISSIPATION PC (mW) 1000 (MHz) 30 3 3 BASE-EMMITER VOLTAGE fT CAPACITANCE IC COLLCETOR CURRENT Ta=100℃ 100 1 0.2 TRANSITION FREQUENCY Ta=25℃ Cib 300 1000 1500 300 VCE=10V —— V 10 20 (V) Ta 300 250 200 150 100 50 Ta=25℃ 1 1 3 COLLECTOR CURRENT www.umw-ic.com 30 10 IC 0 100 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW SS8050 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司