S9018

UMW R S9018 UMW S9018 SOT-23 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR (NPN) FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product z 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 200 mW 5ș-$ Thermal Resistance from Junction to Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=12V, IE=0 0.05 μA Collector cut-off current ICEO VCE=12V, IB=0 0.1 μA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 μA DC current gain hFE(1) VCE=5V, IC= 1mA 70 190 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB= 1mA 1.4 V Transition frequency fT VCE=5V, IC= 5mA 800 f=400MHz MHz CLASSIFICATION OF hFE Rank Range www.umw-ic.com L H 70-105 105-190 1 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW S9018 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 2 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司