2SA1015

UMW R UMW 2SA1015 SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSI STOR (PNP) MARKING: Equivalent Circuit: SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES: ※ High voltage and high current ※ Excellent hFE Linearity ※ Complementary to C1815 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Collector Power Dissipation PC 200 mW RΘJA 625 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55～+150 ℃ Thermal Resistance From Junction To Ambient www.umw-ic.com 1 友台半导体有限公司 UMW R UMW 2SA1015 SOT-23 Plastic-Encapsulate Transistors ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50 V , IE=0 -0.1 μA Collector cut-off current ICEO VCB=-50V , IE=0 -1 μA Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 μA hFE VCE=-6V, IC= -2mA 130 hFE VCE=-6V, IC= -0.2mA 70 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 V fT VCE=-10V, IC= -1mA f=30MHz Collector Output Capacitance Cob VCB=-10V, IE= 0 f=1MHz 7 pf Noise Figure NF VCE=-6V, IC= -0.1mA Rg=10kΩ; f=1kHz 6 dB Transition frequency 80 MHz CLASSIFICATION OF hFE Rank L H Range 130-200 200-400 www.umw-ic.com 2 友台半导体有限公司 UMW R UMW 2SA1015 SOT-23 Plastic-Encapsulate Transistors TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS www.umw-ic.com 3 友台半导体有限公司 UMW R www.umw-ic.com UMW 2SA1015 SOT-23 Plastic-Encapsulate Transistors 4 友台半导体有限公司