S9014

UMW R UMW S9014 SOT-23 Plastic-Encapsulate Transistors SOT-23 S9014 TRANSISTOR (NPN) FEATURES z Complementary to S9015 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 μA Collector cut-off current ICEO VCE=35V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 μA DC current gain hFE VCE=5V, IC= 1mA 200 Max Unit 1000 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 5mA 1 V fT Transition frequency VCE=5V, IC= 10mA f=30MHz 150 MHz CLASSIFICATION OF hFE Rank Range www.umw-ic.com L H 200-450 450-1000 1 友台半导体有限公司 UMW R UMW S9014 SOT-23 Plastic-Encapsulate Transistors hFE Static Characteristic 8 1000 Ta=100℃ 18uA Ta=25℃ hFE 16uA DC CURRENT GAIN (mA) 20uA 6 IC COLLECTOR CURRENT COMMON EMITTER Ta=25℃ 14uA 4 12uA 10uA 8uA 2 —— IC 6uA 100 4uA COMMON EMITTER VCE= 5V IB=2uA 0 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1 (V) 10 COLLECTOR CURRENT IC VBEsat —— IC 100 (mA) IC 2 1 0.1 Ta=25℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1 VCE 10 0.1 8 Ta=100℃ Ta=25℃ Ta=100℃ β=20 β=20 0.01 0.1 1 10 COLLECTOR CURRENT IC (mA) 10 COLLECTOR CURRENT —— VBE fT 1000 Ta=25℃ 1 COMMON EMITTER VCE= 5V 0.1 0.0 0.3 0.6 0.9 fT Ta=100℃ 10 100 TRANSITION FREQUENCY (mA) IC COLLECTOR CURRENT 1 IC 100 (mA) —— IC (MHz) 100 IC 0.1 0.1 100 10 COMMON EMITTER VCE=5V Ta=25℃ 1 0.1 1.2 1 BASE-EMMITER VOLTAGE VBE (V) Cob/ Cib 100 —— 10 COLLECTOR CURRENT VCB/ VEB PC 250 —— IC 100 (mA) Ta f=1MHz IE=0/IC=0 COLLECTOR POWER DISSIPATION PC (mW) Cib 10 CAPACITANCE C (pF) Ta=25 ℃ Cob 1 0.1 0.1 1 REVERSE VOLTAGE www.umw-ic.com 10 VR 200 150 100 50 0 20 0 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW S9014 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司