MMBT2222A

UMW R MMBT2222A UMW MMBT2222A SOT-23 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR (NPN) FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Value Symbol Collector-Base Voltage 75 VCBO 40 VCEO Collector-Emitter Voltage 6 VEBO Emitter-Base Voltage Collector Current -Continuous 600 IC Collector Dissipation 300 PC Thermal Resistance, Junction to Ambient 417 RΘJA Junction Temperature 150 TJ Storage Temperature -55~+150 Tstg 1. BASE 2. EMITTER 3. COLLECTOR Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Pa rameter Symbol Collector-base breakdown voltage V(BR)CBO * T est conditions Min Typ Max Unit IC= 10μA, IE=0 75 V IC= 10mA, IB=0 40 V 6 V Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 Collector cut-off current ICBO VCB=60V, IE=0 0.01 μA Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.01 μA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 μA hFE(1) DC current gain * hFE(2) hFE(3) * Collector-emitter saturation voltage VCE(sat) * Base-emitter saturation voltage VBE(sat) * Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf VCE=10V, IC= 150mA 100 VCE=10V, IC= 0.1mA 40 VCE=10V, IC= 500mA 42 IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA VCE=20V, IC= 20mA, f=100MHz 300 1 0.3 2.0 1.2 300 V V MHz VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 10 ns 25 ns VCC=30V, IC=150mA IB1=-IB2=15mA 225 ns 60 ns *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. CLASSIFICATION OF hFE(1) RANK L H RANGE 100–200 200–300 MARKING 13 www.umw-ic.com 1 友台半导体有限公司 UMW R UMW MMBT2222A SOT-23 Plastic-Encapsulate Transistors Static Characteristic 0.25 0.9mA 0.20 400 0.8mA hFE 0.7mA IC 0.6mA 0.15 DC CURRENT GAIN (A) COMMON EMITTER VCE=10V 1mA COMMON EMITTER Ta=25℃ COLLECTOR CURRENT —— IC hFE 500 0.5mA 0.10 0.4mA 0.3mA 0.05 Ta=100℃ 300 200 Ta=25℃ 100 0.2mA IB=0.1mA 0.00 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat 0.5 —— 10 VCE 0 0.1 12 1 (V) 10 100 COLLECTOR CURRENT IC VBEsat 1.2 IC 600 (mA) —— IC 0.4 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=10 0.3 0.2 Ta=100℃ 0.1 Ta=25℃ Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 0.0 0.0 1 10 100 COLLECTOR CURRENT IC IC 1 600 10 (mA) 100 COLLECTOR CURRENT —— VBE Cob/ Cib 100 600 IC —— VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25℃ Cib (pF) 100 IC (mA) COMMON EMITTER VCE=10V C Ta=100℃ 10 CAPACITANCE COLLECTOR CURRENT 600 (mA) Ta=25℃ 1 0.1 0.0 0.2 0.4 0.6 0.8 Cob 10 1 0.1 1.0 1 BASE-EMMITER VOLTAGE VBE (V) fT 500 10 REVERSE VOLTAGE —— IC Pc 400 —— V 20 (V) Ta COMMON EMITTER VCE=20V f=200MHz TRANSTION FREQUENCY fT COLLECTOR POWER DISSIPATION Pc (mW) (MHz) Ta=25℃ 100 10 300 200 100 0 0 80 COLLECTOR CURRENT www.umw-ic.com IC (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW MMBT2222A SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司