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B5817WS-SJ

B5817WS-SJ

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SOD-323

  • 描述:

    肖特基二极管

  • 数据手册
  • 价格&库存
B5817WS-SJ 数据手册
B5817WS THRU B5819WS Reverse Voltage 20-40 Volts Forward Current - 1.0 Ampere SCHOTTKY BARRIER Features SOD-323  For use in low voltage, high frequency inverters  Free wheeling, and polanty protection applications 0.016(0.40) 0.057(1.45) 0.007(0.20) 0.043(1.10) 0.008(0.20)max. Cathode bar 0.071(1.80) 0.063(1.40) 0.110 (2.80) 0.006 (0.15) 0.024 (0.60) 0.014 (0.35) 0.0019 (0.05) 0.0079 (0.20) 9° 0.016 (0.45) 0.008 (0.2 ) Case: JEDEC SOD-323 molded plastic body Terminals: Plated leads solderable per MILSTD-750, Method 2026 Polarity: Polarity symbols marked on case Weight : 0.00019ounce, 0.00548grams Marking: B5817WS:SJ, B5818WS:SK, B5819WS:SL 0° to 0.043 (1.10) Mechanical Data 0.032 (0.80) 0.098 (2.50) Dimensions in inches and (millimeters) Absolute Maximum Ratings at 25 °C PARAMETER Peak repetitive peak reverse voltage Working peak DC Blocking voltage SYMBOLS B5817WS B5818WS B5819WS VRRM VRWM VR 20 30 40 V RMS Reverse voltage Average rectified output current Peak forward surge current at 8.3ms VR(RMS) 14 21 28 V UNITS IO 1 A IFSM 25 A Power dissipation Thermal resistance junction to ambient Operating Junction Temperature Range Pd RΘJA 250 mW 400 °C/W Tj -55 to +125 ℃ Storage temperature Non-Repetitive peak reverse voltage TSTG -55 to +125 20 VRM ℃ V 40 30 Characteristics at Ta= 25 °C PARAMETER SYMBOLS Reverse breakdown voltage Reverse voltage leakage current V(BR) TA = 25°C TA = 100°C IR Min. Max. V 30 V 40 V 1 10 0.45 0.75 Forward voltage VF 0.55 0.875 0.6 0.9 Diode capacitance http://www.microdiode.com CD Unit 20 110 mA Test conditions IR=10mA B5817WS B5818WS B5819WS VR=20V B5817WS VR=30V B5818WS VR=40V B5819WS IR=1mA B5817WS V V IF=1A IF=3A V pF B5818WS B5819WS VR=4V,f=1.0MHz Rev:2025A4 Page :1 B5817WS THRU B5819WS Reverse Voltage 20-40 Volts Forward Current - 1.0 Ampere Typical Characterisitics Forward B5819WS Reverse Characteristics Ta=100 ℃ REVERSE CURRENT IR T =2 a 5℃ T= a 10 0℃ IF (mA) (A) 1 FORWARD CURRENT Characteristics 10 3 0.1 1 0.1 Ta=75 ℃ 0.01 Ta=25 ℃ 0.01 0.0 1E-3 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 0 10 20 30 REVERSE VOLTAGE (V) Capacitance Characteristics VR 40 (V) Power Derating Curve 375 300 f=1MHz 250 PD (mW) 300 200 225 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 150 75 150 100 50 0 0 0 4 8 12 REVERSE VOLTAGE 16 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) The curve above is for reference only. http://www.microdiode.com Rev:2025A4 Page :2 B5817WS THRU B5819WS Reverse Voltage 20-40 Volts Forward Current - 1.0 Ampere Packing information P0 unit:mm P1 d Item E F B A W Carrier width Carrier length Carrier depth Sprocket hole 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width P D2 T D1 C W1 D Symbol Tolerance A B C d D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 SOD-323 2.1 4.0 1.60 1.55 178.00 50.0 13.00 1.75 3.50 4.00 4.00 2.00 0.25 8.15 10.5 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) CARTON SIZE (m/m) CARTON (pcs) SOD-323 7" 3,000 4.0 45,000 190*190*190 178 400*400*220 180,000 Suggested Pad Layout Symbol Unit (mm) Unit (inch) A 0.028 B 0.7 0.7 C 2.15 0.085 D 1.45 0.057 E 2.85 0.112 0.028 Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). http://www.microdiode.com Rev:2025A4 Page :3
B5817WS-SJ 价格&库存

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B5817WS-SJ
    •  国内价格
    • 10+0.07440
    • 50+0.06864
    • 200+0.06384
    • 600+0.05904
    • 1500+0.05520
    • 3000+0.05280

    库存:2990

    B5817WS-SJ
      •  国内价格
      • 1+0.30580
      • 200+0.10208
      • 1500+0.06380
      • 3000+0.05060

      库存:499