15N10

UMW R 15N10 15N10 General Description The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RDS(ON), 100mΩ(Typ) @ VGS =4.5V Low Total Gate Charge Low Reverse Transfer Capacitance Improved dv/dt Capability Fast Switching Speed Application Uninterruptible Power Supply(UPS) Inverter System Package Marking and Ordering Information Device Marking Device 15N10 Device Package 15N10 TO-252 Reel Size Tape width Quantity 325mm 16mm 2500 Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous TC=25℃ Note1 TC=100℃ Drain Current-Pulsed Note2 Maximum Power Dissipation TC=25℃ Storage Temperature Range Operating Junction Temperature Range Value Unit VDS 100 V VGS ±20 V 15 A 10 A IDM 60 A PD 55 W TSTG -55 to +175 ℃ TJ -55 to +175 ℃ ID Thermal Resistance Parameter Symbol RθJC Thermal Resistance,Junction-to-Case www.umw-ic.com 1 Min. Typ. - 2.72 Max Unit - ℃/W 友台半导体有限公司 UMW R 15N10 Electrical Characteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250uA 100 - - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 uA Gate-Body Leakage IGSS VGS=±20V,VDS=0V - - ±100 nA Symbol Conditions Min. Typ. Max. Unit Gate Threshold Voltage VGS(TH) VDS=VGS,IDS=250uA 1.0 1.6 3.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V,IDS=10A - 95 110 VGS=4.5V,IDS=5A - 100 130 gFS VGS=5V,IDS=4A 2 - - S Symbol Conditions Min. Typ. Max. Unit - 632 - - 37 - - 21 - Min. Typ. Max. - 12.6 - - 6 - - 32.5 - - 4.3 - - 19.2 - - 3.4 - - 6.1 - ON CHARACTERISTICS Parameter Forward Transconductance mΩ DYNAMIC CHARACTERISTICS Parameter Input Capacitance CiSS Output Capacitance COSS Reverse Transfer Capacitance Crss VDS =50V, VGS = 0V, f=1MHz pF SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Rise Time Symbol Td(on) tr Turn-Off Delay Time Fall Time Conditions Td(off) VGS=10V,VDs=50V, RL=2.8Ω, RGEN=6Ω, ID=10A tf Total Gate Charge at 10V Qg Gate to Source Gate Charge Qgs Gate to Drain“Miller”Charge Qgd VDS=80V,IDS=10A, VGS=10V Unit ns nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Parameter Drain-Source Diode Forward Voltage Symbol Conditions Min. Typ. Max. Unit VSD VGS=0V,IDS=10A - - 1.2 V Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=50V,VG=10V, RG=25Ω www.umw-ic.com 2 友台半导体有限公司 UMW R www.umw-ic.com 15N10 3 友台半导体有限公司 UMW R www.umw-ic.com 15N10 4 友台半导体有限公司 UMW R 15N10 SCALE 4:1 SHEET DWG NO: TO-252-01-A1 www.umw-ic.com TITLE TO-252 5 1 OF 1 友台半导体有限公司