SI2300

SI2300 N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 48mΩ@4.5V 20 V 6A 55mΩ@2.5V FEATURE ※ TrenchFET Power MOSFET MARKING APPLICATION ※ Load Switch for Portable Devices ※ DC/DC Converter Equivalent Circuit 1.GATE 2.SOURCE 3.DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current ID 6 Continuous Source-Drain Current(Diode Conduction) IS 0.6 Power Dissipation PD Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature 1/5 Unit V A W RθJA 312.5 ℃/W TJ 150 ℃ TSTG -55~+150 ℃ SI2300 MOSFET ELECTRICAL CHARACTERISTICS Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 20 VGS(th) VDS =VGS, ID =250µA 0.45 Gate-body leakage IGSS Zero gate voltage drain current IDSS Gate-threshold voltage 1 V VDS =0V, VGS =±10V ±100 nA VDS =16V, VGS =0V 1 µA VGS =4.5V, ID = 6A 22 48 mΩ VGS =2.5V, ID =4A 28 55 mΩ gfs VDS =5V, ID =6A 8 VSD IS=1A, VGS=0V 0.74 1.28 V 7.7 10 nC Drain-source on-resistancea RDS(on) Forward transconductancea Diode forward voltage V S Dynamic Total gate charge Qg Gate-source charge Qgs Gate-drain charge VDS =10V, VGS =4.5V, ID =6A 0.32 nC Qgd 2.1 nC Input capacitance b Ciss 574 pF Output capacitance b Coss 70 pF Reverse transfer capacitanceb Crss 60 pF VDS =10V, VGS =0V, f=1MHz Switchingb Turn-on delay time Rise time Turn-off delay time Fall time td(on) VDD=10V 78.7 ns tr RL=5.5Ω, ID ≈3.6A, 128 ns td(off) VGEN=4.5V,Rg=6Ω 453 ns 80.9 ns tf Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. 2/5 SI2300 TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS VDS ± Drain-to-Source Voltage (V) VGS ± Gate-to-Source Voltage (V) ID ± Drain Current (A) VDS ± Drain-to-Source Voltage (V) Q ± T t l G t Ch ( C) TJ ± J 3/5 ti T t ( C) SI2300 TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS VSD ± Source-to-Drain Voltage (V) VGS ± Gate-to-Source Voltage (V) TJ ± Temperature ( C) Time (sec) Square Wave Pulse Duration (sec) 4/5 SI2300 5/5