AO3400A

UMW R UMW AO3400A N-Channel Enhancement Mode Features SOT–23 VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) 1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain-Source Voltage Parameter VDS 30 V Gate-Source Voltage VGS Continuous Drain Current TA=25 TA=70 P u l s e d D r a i n Cu r r e n t * Power Dissipation ID IDM TA=25 TA=70 PD 12 V 5.8 4.9 A 30 1.4 1 W Thermal Resistance.Junction- to-Ambient RthJA 125 /W Thermal Resistance.Junction- to-Case Rthc 60 /W TJ, TSTG -55 to 150 Junction and Storage Temperature Range * Repetitive rating, pulse width limited by junction temperature. www.umw-ic.com 1 友台半导体有限公司 UMW R UMW AO3400A Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Gate Threshold Voltage IGSS VGS(th) Testconditions ID=250 Min On state drain current RDS(ON) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Max 30 A, VGS=0V 1 VDS=24V, VGS=0V ,TJ=55 5 VDS=0V, VGS= 12V 100 A nA 1.1 1.4 22 . 8 28 32 39 VGS=4.5V, ID=5A 27 . 3 33 m VGS=2.5V, ID=4A 43 . 3 52 m VDS=VGS ID=250 0.7 Unit V VDS=24V, VGS=0V A VGS=10V, ID=5.8A Static Drain-Source On-Resistance Typ VGS=10V, ID=5.8A TJ=125 VGS=4.5V, VDS=5V 30 VDS=5V, ID=5A 10 m A 15 823 S 1050 VGS=0V, VDS=15V, f=1MHz 99 VGS=0V, VDS=0V, f=1MHz 1.4 3.6 9.7 12 pF pF 77 VGS=4.5V, VDS=15V, ID=5.8A V pF nC Gate Source Charge Qgs 1.6 nC Gate Drain Charge Qgd 3.1 nC Turn-On DelayTime tD(on) 3.3 Turn-On Rise Time tr Turn-Off DelayTime tD(off) Turn-Off Fall Time VGS=10V, VDS=15V, RL=2.7 tf ,RGEN=3 5 ns 4.8 7 ns 26.3 40 ns 4.1 6 ns Body Diode Reverse Recovery Time trr IF=5A, dI/dt=100A/ s 16 20 ns Body Diode Reverse Recovery Charge Qrr IF=5A, dI/dt=100A/ s 8.9 12 nC Maximum Body-Diode Continuous Current IS 2.5 A 1 V Diode Forward Voltage www.umw-ic.com VSD IS=1A,VGS=0V 2 0.71 友台半导体有限公司 R UMW UMW AO3400A ■ Typical Characterisitics 25 20 10V 3V VDS=5V 16 4.5V 2.5V 15 12 ID(A) ID (A) 20 8 10 VGS=2V 5 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 0 60 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 3 Normalized On-Resistance 1.8 50 VGS=2.5V 40 30 VGS=4.5V 20 VGS=10V 1.6 VGS=4.5V 1.4 VGS=10V 1.2 VGS=2.5V 1 10 0.8 0 5 10 15 0 20 70 1.0E+01 60 1.0E+00 ID=5A 50 1.0E-01 IS (A) 125°C 40 30 50 75 100 125 150 175 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 20 25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage RDS(ON) (mΩ) 25°C 4 0 RDS(ON) (mΩ) 125°C 1.0E-05 1.0E-06 10 0 2 4 6 8 0.0 10 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage www.umw-ic.com 0.2 3 友台半导体有限公司 R UMW UMW AO3400A ■ Typical Characterisitics 5 1200 Capacitance (pF) 4 VGS (Volts) 1400 VDS=15V ID=5A 3 2 1 1000 Ciss 800 600 400 Coss 200 0 0 2 4 6 8 10 0 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1ms 1.0 10ms 1s DC 1 10 100 30 20 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 25 TJ(Max)=150°C TA=25°C 0 0.001 0.1 10 20 10 10s 0.1 15 30 100µs 0.1s 10 40 TJ(Max)=150°C TA=25°C RDS(ON) 10.0 limited 5 VDS (Volts) Figure 8: Capacitance Characteristics Power (W) ID (Amps) 100.0 Crss . D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.umw-ic.com 4 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW AO3400A Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 5 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司