IRLML5203

UMW R UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS SOT–23 IRLML5203 P-Channel 30-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX \85mΩ@-10 V  -30V -3.0A  145mΩ@-4.5V  1. BASE 2. EMITTER 3. COLLECTOR General Description The UMW IRLML5203 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Equivalent Circuit MARKING 1H MK Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -3.0 A Drain Current-Pulsed IDM -24 A Power Dissipation PD 300 mW RθJA 417 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ Thermal Resistance from Junction to Ambient www.umw-ic.com 1 Units 友台半导体有限公司 UMW R UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Static characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate -source leakage current IGSS VGS =±20V, VDS = 0V ±100 nA VGS =-10V, ID =-4.1A 85 mΩ VGS =-4.5V, ID =-3A 145 mΩ Drain-source on-resistance (note 1) RDS(on) Forward tranconductance (note 1) Gate threshold voltage gFS VGS(th) Diode forward voltage (note 1) VSD -30 VDS =-5V, ID =-4A 5.5 VDS =VGS, ID =-250µA -1 V S IS=-1A,VGS=0V -3 V -1 V Dynamic characteristics (note 2) Input capacitance Ciss 700 pF Output capacitance Coss 120 pF Reverse transfer capacitance Crss 75 pF td(on) 8.6 ns VGS=-10V,VDS=-15V, 5.0 ns RL=3.6Ω,RGEN=3Ω 28.2 ns 13.5 ns VDS =-15V,VGS =0V,f =1MHz Switching characteristics (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Notes: 1. Pulse test: Pulse width ≤300µs, Duty cycle ≤2%. 2. These parameter have no way to verify. www.umw-ic.com 2 友台半导体有限公司 UMW 100 R UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS 100 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V 10 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 1 -2.70V 0.1 20µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 10 1 -2.70V 20µs PULSE WIDTH TJ = 150 °C 0.1 0.1 100 1 Fig 1. Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.0 10 TJ = 150 ° C 1 TJ = 25 ° C V DS = -15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 ID = 3.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.umw-ic.com 100 Fig 2. Typical Output Characteristics 100 0.1 2.0 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 4. Normalized On-Resistance Vs. Temperature 3 友台半导体有限公司 UMW R UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 800 600 Ciss 400 200 Coss Crss ID = -3.0A VDS = -24V VDS = -15V 16 12 8 4 0 0 1 10 0 100 4 8 12 16 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 -II D , Drain Current (A) -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150 ° C 1 10us 10 100us 1ms 1 TJ = 25 ° C 0.1 0.4 10ms TA = 25 ° C TJ = 150 ° C Single Pulse V GS = 0 V 0.6 0.8 1.0 1.2 1.4 1.6 0.1 0.1 1.8 10 100 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage www.umw-ic.com 1 -VDS , Drain-to-Source Voltage (V) -VSD ,Source-to-Drain Voltage (V) 4 友台半导体有限公司 UMW R UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS 3.0 VDS -ID , Drain Current (A) VGS RD D.U.T. RG - 2.0 + VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1.0 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 10% 150 TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 P DM 0.02 0.01 1 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.umw-ic.com 5 友台半导体有限公司 UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS 0.14 R DS (on) , Drain-to-Source On Resistance ( Ω) R DS(on) , Drain-to -Source On Resistance ( Ω ) UMW R 0.13 0.12 0.11 0.10 ID = -3.0A 0.09 0.08 0.07 4.0 6.0 8.0 10.0 12.0 14.0 16.0 0.40 0.30 VGS = -4.5V 0.20 VGS = -10V 0.10 0.00 0 4 -V GS, Gate -to -Source Voltage (V) 8 12 16 -I D , Drain Current (A) Fig 12. Typical On-Resistance Vs. Drain Current Fig 11. Typical On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. 50KΩ QG QGS 12V .3µF QGD D.U.T. +VDS VGS VG -3mA IG Charge ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform www.umw-ic.com .2µF Fig 13b. Gate Charge Test Circuit 6 友台半导体有限公司 UMW R UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS 30 20 ID = -250µA Power (W) -V GS(th) , Variace ( V ) 2.5 2.0 10 0 1.5 -75 -50 -25 0 25 50 75 100 125 0.001 150 0.100 1.000 10.000 100.000 Time (sec) T J , Temperature ( °C ) Fig 15. Typical Power Vs. Time Fig 14. Threshold Voltage Vs. Temperature www.umw-ic.com 0.010 7 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 8 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司