IRLML6402

UMW R UMW IRLML6402 P-Channel Enhancement MOSFET ■ Features SOT–23 ● Ultra low on-resistance. ● P-Channel MOSFET. ● SOT-23 Footprint. ● Low profile(＜1.1mm). ● Available in tape and reel. 1. BASE ● Fast switching. 2. EMITTER 3. COLLECTOR MARKING 1E MK ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current VGS=4.5V @ TA=25℃ Continuous Drain Current ID VGS=4.5V@ TA=70℃ Pulsed Drain Current a Power Dissipation @ TA=25℃ Power Dissipation @ TA=70℃ Single Pulse Avalanche Energy b Thermal Resistance.Junction- to-Ambient IDM PD EAS RthJA Linera Derating Factor Unit V -3.7 -2.2 A -30 1.3 0.8 11 W mJ 100 ℃/W 0.01 W/℃ Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 ℃ Notes: a.Repetitive Rating :Pulse width limited by maximum junction temperature b.Starting TJ=25℃, L=1.65mH, RG=25Ω, IAS=-3.7A www.umw-ic.com 1 友台半导体有限公司 UMW R UMW IRLML6402 P-Channel Enhancement MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Test conditions Symbol Drain-source Breakdown voltage Zero Gate Voltage Drain Current ce leadage VDSS IDSS I e Static drain-source on- resistance Forward Transconductance V = 0V VDS = -20 V, V ID = 0V VDS = -20 V, V = 0V, TJ V V RDS(on) V = -4.5V 0.050 ID= -3.1A, V = -2.5V 0.080 0.135 Ciss VDS = -10 V, V Reverse transfer capacitance Crss f= 1MHz -0.40 gd td(on) Rise time tr Turn-off delay time td(off) = 0 V, VDS = -10V ,V = -5.0 V , ID ID 8.0 12 1.2 1.8 2.8 4.2 VDD= -10 V, 48 RD Ω 588 Ω 381 tf R TJ=25℃, IF = -1.0 A, μs Pulsed source curren ISM MOSFET symbo l showing the integral reverse p-n junction diode Diode forward voltage VSD TJ=25℃,V IS pF nC 350 trr Continuous source current Ω 110 Reverse recovery time rr nA V 145 Fall time Reverse recovery charge -0.55 S g rain Charge tit -25 ℃ ID Coss Turn-on delay time V ±100 VDS = -10 V, ID Unit -1.0 , ID gfs gs Max -20 =±12V Input capacitance ce Charge Typ VDS = V Output capacitance e Min ns 43 11 ns nC D -1.3 A G = 0 V, IS = -1.0 A S -22 -1.2 V lse width limited by max.junction temperature. e width ≤ 400μs, Duty cycle ≤ www.umw-ic.com 2 友台半导体有限公司 UMW R UMW IRLML6402 P-Channel Enhancement MOSFET ■ Typical Characterisitics 100 100 VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 -2.25V 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 -VDS , Drain-to-Source Voltage (V) 10 -2.25V 1 0.1 100 Fig 1. Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C TJ = 150 ° C V DS = -15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 -VGS , Gate-to-Source Voltage (V) 8.0 1 10 -VDS , Drain-to-Source Voltage (V) 100 ID = -3.7A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics www.umw-ic.com 20µs PULSE WIDTH TJ = 150 °C Fig 2. Typical Output Characteristics 100 10 2.0 VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP TOP Fig 4. Normalized On-Resistance 3 友台半导体有限公司 UMW R UMW IRLML6402 P-Channel Enhancement MOSFET ■ Typical Characterisitics 1000 -VGS , Gate-to-Source Voltage (V) 800 C, Capacitance(pF) 10 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 600 400 Coss 200 Crss 0 VDS =-10V 8 6 4 2 0 1 10 ID = -3.7A 100 FOR TEST CIRCUIT SEE FIGURE 13 0 3 VDS, Drain-to-Source Voltage (V) 9 12 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -II D , Drain Current (A) -ISD , Reverse Drain Current (A) 6 QG , Total Gate Charge (nC) 10 . TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.2 0.6 0.8 1.0 1ms 1 10ms 0.1 0.1 1.2 -VSD ,Source-to-Drain Voltage (V) 1 10 -VDS , Drain-to-Source Voltage (V) 100 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage www.umw-ic.com 100us TC = 25 ° C TJ = 150 ° C Single Pulse V GS = 0 V 0.4 10us 10 4 友台半导体有限公司 UMW R UMW IRLML6402 P-Channel Enhancement MOSFET ■ Typical Characterisitics 25 EAS , Single Pulse Avalanche Energy (mJ) -ID , Drain Current (A) 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 TC , Case Temperature ( ° C) 150 Fig 9. Maximum Drain Current Vs. Case Temperature ID -1.7A -3.0A BOTTOM -3.7A TOP 20 15 10 5 0 25 50 75 100 125 Starting TJ , Junction Temperature ( °C) 150 Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 1 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 1 10 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.umw-ic.com 5 友台半导体有限公司 UMW R UMW IRLML6402 P-Channel Enhancement MOSFET R DS(on) , Drain-to -Source Voltage ( Ω ) 0.14 0.12 0.10 0.08 Id = -3.7A 0.06 0.04 0.02 2.0 3.0 4.0 5.0 6.0 7.0 -V GS, Gate -to -Source Voltage ( V ) 0.20 VGS = -2.5V 0.16 0.12 0.08 VGS = -4.5V 0.04 0.00 0 5 10 15 20 25 30 -I D , Drain Current ( A ) Fig 12. Typical On-Resistance Vs. Gate Voltage www.umw-ic.com R DS ( on ) , Drain-to-Source On Resistance ( Ω ) ■ Typical Characterisitics Fig 13. Typical On-Resistance Vs. Drain Current 6 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW IRLML6402 P-Channel Enhancement MOSFET Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 7 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司