VBJ2102M

VBJ2102M www.VBsemi.com P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 • TrenchFET® Power MOSFET RDS(on) () ID (A) 0.200 at VGS = - 10 V - 3.0 0.230 at VGS = - 6 V - 2.4 Qg (Typ.) • 100% Rg and UIS Tested 13.2 nC APPLICATIONS • Active Clamp in Intermediate DC/ Available DC Power Supplies • H-Bridge High Side Switch for Lighting Application S SOT-223 G D G D S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 100 ± 20 - 3.0 -2.1 ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD V - 2a, b - 1.6a, b - 12 - 4.9 A - 2.5a, b - 15 11.25 6.5 4.8 mJ 3.1a, b 2a, b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit W °C Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Foot (Drain) t 10 s Steady State Symbol RthJA RthJF Typical 33 17 Maximum 40 21 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 80 °C/W. 1 VBJ2102M www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg gfs tr Rise Time Fall Time Turn-On Delay Time VDS = - 100 V, VGS = 0 V -1 - 10 VDS  - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 3 A -8 µA A 0.200 VGS = - 6 V, ID = - 2 A 0.230 VDS = - 15 V, ID = 3 A 12  S 819 VDS = - 35 V, VGS = 0 V, f = 1 MHz 51 pF 32 VDS = - 50 V, VGS = - 10 V, ID = - 3 A 17.5 32 13.2 25 VDS = - 50 V, VGS = - 6 V, ID = - 3 A 3.4 f = 1 MHz 6.1 9.2 10 20 nC 6.4 VDD = - 50 V, RL = 25  ID  - 3 A, VGEN = - 6 V, Rg = 1  95 tf 15 30 td(on) 11 18 VDD = - 50 V, RL = 25  ID  - 3 A, VGEN = - 10 V, Rg = 1  tf Fall Time V nA 40 td(off) Turn-Off DelayTime -4 ± 100 55 tr Rise Time -2 20 td(off) Turn-Off DelayTime mV/°C - 6.6 VDS = - 100 V, VGS = 0 V, TJ = 55 °C td(on) Turn-On Delay Time V - 165 18 32 32 58 20 35  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a Pulse Diode Forward Current Body Diode Voltage IS TC = 25 °C - 13 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 15 IS = - 3 A IF = - 3 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 65 90 ns 180 270 nC 45 20 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBJ2102M www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 2.0 VGS = 10 V thru 6 V VGS = 5 V 1.6 ID - Drain Current (A) ID - Drain Current (A) 16 12 8 4 1.2 0.8 TC = 125 °C 0.4 VGS = 4 V TC = 25 TC = - 55 °C 0 0.0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 3 4 5 6 Transfer Characteristics 0.6 1200 0.5 960 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics 0.4 VGS = 6 V 0.3 2 VGS - Gate-to-Source Voltage (V) VGS = 10 V Ciss 720 480 0.2 240 Coss 0.1 Crss 0 0 4 8 12 16 20 0 20 ID - DrainCurrent (A) 40 80 100 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 2.2 10 RDS(on) - On-Resistance (Normalized) VDS = 50 V ID = 3 A VGS - Gate-to-Source Voltage (V) 60 8 VDS = 75 V 6 VDS = 100 V 4 2 0 0 4 8 12 Qg - TotalGateCharge(nC) Gate Charge 16 20 ID = 4 A 1.9 VGS = 10 V 1.6 1.3 VGS = 6 V 1.0 0.7 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 VBJ2102M www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 1.6 1.2 0.8 TJ = 125 °C 0.4 TJ = 25 °C 0.0 0.1 0.3 0.6 0.9 1.2 1.5 0 2 4 8 10 VGS - Gate-to-SourceVoltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 200 0.7 160 ID = 250 µA 0.4 ID = 5 mA 0.1 - 0.2 - 0.5 - 50 120 80 40 0 - 25 0 25 50 75 100 125 150 0 .0 0 1 0.01 TJ - Temperature (°C) 1 Single Pulse Power, Junction-to-Ambient 100 I D - Drain Current (A) 0.1 Time (s) Threshold Voltage 10 Limited by RDS(on)* 1 ms 1 10 ms 100 ms 0.1 1s 10 s TA = 25 °C Single Pulse 0.01 0.01 DC 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 6 VSD - Source-to-Drain Voltage (V) Power (W) V GS(th) Variance (V) 0.0 10 VBJ210M www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4 ID - DrainCurrent (A) 3 2 1 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 8.0 2.0 6.4 1.6 Power (W) Power (W) Current Derating* 4.8 3.2 1.6 1.2 0.8 0.4 0.0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Foot 125 150 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 VBJ210M www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 ° C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10-4 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 1 10 VBJ210M www.VBsemi.com SOT-223 (HIGH VOLTAGE) B D A 3 0.08 (0.003) B1 C 0.10 (0.004) M C B M A 4 3 H E 0.20 (0.008) M C A M L1 1 2 3 4xL 3xB e θ 0.10 (0.004) M C B M e1 4xC MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 1.55 1.80 0.061 0.071 0.033 B 0.65 0.85 0.026 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 e 2.30 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 L 0.91 - 0.036 L1 θ 0.061 BSC - 0.146 0.0905 BSC 0.287 0.0024 BSC 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. 7 VBJ2102M www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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