50N06

UMW R UMW 50N06 60V N-Channel Enhancement Mode Power MOSFET UMW 50N06 General Description The 50N06 uses advanced trench technology and design to provide excellent R DS(ON) wi t h l ow ga t e c ha r g e. I t c a n be used in a wide variety of applications. Features VDS = 60V,ID =50A RDS(ON),12mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired Application Load Switch PWM Application Power management Package Marking and Ordering Information Device Marking UMW 50N06 Device Device Package Reel Size Tape width Quantity UMW 50N06 TO-252 330mm 12mm 2500 Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V 50 A 33 A Drain Current-ContinuousNote3 TC=25℃ TC=100℃ ID Drain Current-Pulsed IDM 200 A Avalanche Energy EAS 64 mJ PD 105 W TSTG -55 to +150 ℃ TJ -55 to +150 ℃ Note1 Note4 Maximum Power Dissipation TC=25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Parameter Symbol Min. Typ. Max Unit RθJC - - 1.4 ℃/W Thermal Resistance,Junction-to-Case www.umw-ic.com 1 友台半导体有限公司 UMW R UMW 50N06 60V N-Channel Enhancement Mode Power MOSFET Electrical Characteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250uA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1.0 uA Gate-Body Leakage IGSS VGS=±20V,VDS=0V - - ±100 nA Symbol Conditions Min. Typ. Max. Unit Gate Threshold Voltage VGS(TH) VDS=VGS,IDS=250uA 1.0 1.6 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V,IDS=30A - 12 17 mΩ VGS=4.5V,IDS=20A - 16 21 mΩ Conditions Min. Typ. Max. Unit - 2928 - - 141 - - 120 - Min. Typ. Max. - 7.5 - - 6.0 - - 28.4 - - 5.5 - - 50 - - 6 - - 15 - ON CHARACTERISTICS Parameter DYNAMIC CHARACTERISTICS Parameter Symbol Input Capacitance CiSS Output Capacitance COSS Reverse Transfer Capacitance Crss VDS =25V, VGS = 0V, f=1MHz pF SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Rise Time Symbol Td(on) tr Turn-Off Delay Time Fall Time Conditions VGS=10V,VDs=30V, RGEN=1.8Ω Td(off) ID=25A tf Total Gate Charge at 10V Qg Gate to Source Gate Charge Qgs Gate to Drain“Miller”Charge Qgd VDS=30V,IDS=25A, VGS=10V Unit ns nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit VSD VGS=0V,IDS=30A - - 1.2 V Reverse Recovery Time trr TJ=25℃,IF=25A - 29 - nS Reverse Recovery Charge Qrr di/dt=100A/us - 42 - nC Drain-Source Diode Forward Voltage Notes: 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤ 2%. 4: EAS condition: L=0.5mH,VDD=10V,VG=10V,VGATE=20V,Start TJ=25℃. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW 50N06 60V N-Channel Enhancement Mode Power MOSFET www.umw-ic.com 3 友台半导体有限公司 UMW R UMW 50N06 60V N-Channel Enhancement Mode Power MOSFET www.umw-ic.com 4 友台半导体有限公司 UMW R UMW 50N06 60V N-Channel Enhancement Mode Power MOSFET www.umw-ic.com 5 友台半导体有限公司 UMW R UMW 50N06 60V N-Channel Enhancement Mode Power MOSFET www.umw-ic.com 6 友台半导体有限公司