SI2300A

UMW R UMW SI2300A UMW SI2300A N-Channel 20-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX 25mΩ@4.5V 20 V SOT-23 6A 34.5mΩ@ 2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE z TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices z DC/DC Converter z MARKING Equivalent Circuit C009T Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current ID 6 Continuous Source-Drain Current(Diode Conduction) IS 0.6 Power Dissipation Unit V A W PD Thermal Resistance from Junction to Ambient (t≤5s) RθJA ℃/W 312.5 Operating Junction TJ 150 Storage Temperature TSTG -55 ~+150 www.umw-ic.com 1 ℃ 友台半导体有限公司 UMW R UMW SI2300A Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =10µA 20 VGS(th) VDS =VGS, ID =50µA 0.40 Gate-body leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =20V, VGS =0V 1 µA Gate-threshold voltage Drain-source on-resistancea Forward transconductance rDS(on) a Diode forward voltage 1 VGS =4.5V, ID = 6 A 0.021 0.025 VGS =2.5V, ID =5.2A 0.028 0.034 gfs VDS =5V, ID =3.6A 8 VSD IS=0.94A,VGS=0V 0.74 1.2 7.7 10 V Ω S V Dynamic Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 2.1 Ciss 574 Input capacitance b Output capacitance b Reverse transfer capacitance Switching Coss b VDS =10V,VGS =4.5V,ID =3.6A VDS =10V,VGS =0V,f=1MHz 0.32 70 nC pF 60 Crss b Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf VDD=10V, RL=5.5Ω, ID ≈3.6A, VGEN=4.5V,Rg=6Ω 78.7 128 ns 453 80.9 Notes : a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. b. These parameters have no way to verify. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW 2300A Typical Characteristics (TJ =25℃ Noted) www.umw-ic.com 3 友台半导体有限公司 UMW R UMW 2300A Typical Characteristics (TJ =25℃ Noted) www.umw-ic.com 4 友台半导体有限公司