MEM2313SG

MEM2313 P-Channel MOSFET MEM2313 General Description Features  MEM2313SG Series Dual P-channel -30V/-6A transistor, RDS(ON) =52mΩ@ VGS=-10V,ID=-6A produced with high cell density DMOS trench RDS(ON) =67mΩ@ VGS=-4.5V,ID=-4A enhancement mode field-effect technology, which is especially used to minimize  High Density Cell Design For Ultra Low On-Resistance on-state resistance. This device particularly  Surface mount package:SOP8 suits low voltage . applications, and low power dissipation . Pin Configuration Typical Application  Power management  Load switch  Battery protection Absolute Maximum Ratings Parameter Symbol Ratings Units Drain-Source Voltage VDSS -30V V Gate-Source Voltage VGSS ±20 V Drain Current TA=25℃ TA=70℃ Pulsed Drain Current1,2 Total Power Dissipation ID IDM TA=25℃ Pd TA=70℃ -6 -4 -30 1.3 0.8 A A W Operating Temperature Range TOpr 150 ℃ Storage Temperature Range Tstg -65/150 ℃ T V02 www.microne.com.cn 1 MEM2313 hermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient3 Steady-State Symbol Ratings Units RθJA 62.5 ℃/W Electrical Characteristics Parameter Symbol Test Condition Min Typ. Max Units VGS=0V, ID=-250μA -30 -34 VDS= VGS, ID=-250μA -1.2 -1.3 -2 V VDS=0V, VGS=20V 0.8 100 nA VDS=0V, VGS=-20V -0.8 -100 nA VDS=-24V , VGS=0V -3.5 -300 nA Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Forward Transconductance V(BR)DSS VGS(th) IGSS IDSS V RDS(ON)1 VGS=-10V, ID=-6A 33 52 65 mΩ RDS(ON)2 VGS=-4.5V, ID=-4A 50 67 80 mΩ gFS Drain-Source Diode Forward Current IS Source-drain (diode forward) voltage VSD VDS = –5 V, ID = –5 A VGS=0V, IS=-1A 10 -0.8 S -1.3 A -1.2 V Dynamic Characteristics Input Capacitance Ciss VDS = -15V, 530 Output Capacitance Coss VGS = 0 V, 140 Reverse Transfer Capacitance Crss f = 1 MHz 70 pF Switching Characteristics Turn-On Delay Time td(on) VDD = -15 V, 8 15 tr ID=-1 A, 15 25 td(off) VGEN = -10 V, 15 25 tf Rg = 6 Ω 10 17 Total Gate Charge Qg VDS = -15 V, 10 15 Gate-Source Charge Qgs VGS = -5V, 2.2 Gate-Drain Charge Qgd ID = -5A 2 Rise Time Turn-Off Delay Time Fall-Time ns nc 1、Pulse width limited by Max. junction temperature. 2、Pulse width