VS3618AE

VS3618AE 30V/50A N-Channel Advanced Power MOSFET Features V DS 30 V R DS(on),TYP@ VGS=10 V 6 mΩ R DS(on),TYP@ VGS=4.5 V 9 mΩ ID 50 A  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V PDFN3333  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant Part ID Package Type Marking VS3618AE PDFN3333 3618AE Tape and reel information 5000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Unit V(BR)DSS Drain-Source breakdown voltage 30 V VGS Gate-Source voltage ±20 V IS Diode continuous forward current TC =25°C 50 A TC =25°C 50 A ID Continuous drain current @VGS=10V TC =100°C 31 A TC =25°C 200 A TA=25°C 17 A TA=70°C 14 A 25 mJ IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V EAS Avalanche energy, single pulsed ② PD Maximum power dissipation TC =25°C 30 W PDSM Maximum power dissipation ③ TA=25°C 3.6 W TSTG , TJ Storage and junction temperature range -55 to 150 °C Typical Unit Thermal Characteristics Symbol Parameter R JC Thermal Resistance, Junction-to-Case 4.1 °C/W R JA Thermal Resistance, Junction-to-Ambient 35 °C/W Copyright Vanguard Semiconductor Co., Ltd Rev C – SEP, 2018 www.vgsemi.com VS3618AE 30V/50A N-Channel Advanced Power MOSFET Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 -- -- V Zero Gate Voltage Drain Current VDS=30V,VGS=0V -- -- 0.1 μA Zero Gate Voltage Drain Current( Tj =125℃) VDS=30V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.8 2.5 V RDS(ON) Drain-Source On-State Resistance ④ VGS=10V, ID=15A -- 6 7 mΩ RDS(ON) Drain-Source On-State Resistance ④ VGS=4.5V, ID=10A -- 9 11 mΩ -- 1110 -- pF -- 180 -- pF -- 130 -- pF -- 1.9 -- Ω -- 23 -- nC -- 6.2 -- nC -- 8.9 -- nC -- 14 -- ns V(BR)DSS IDSS Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V,VGS=0V, f=1MHz f=1MHz VDS=15V,ID=15A, VGS=10V Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=15A, -- 27 -- ns t d(off) Turn-Off Delay Time RG=6.8Ω, -- 65 -- ns tf Turn-Off Fall Time -- 19 -- ns VDD=15V, VGS=10V Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=15A,VGS=0V -- 0.84 1.2 V t rr Reverse Recovery Time Tj=25℃,Isd=15A, -- 31 -- ns Qrr Reverse Recovery Charge -- 95 -- nC VGS=0V di/dt=100A/μs NOTE: ① Repetitive rating; pulse width limited by max junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 10A, VGS =10V. Part not recommended for use above this value ③The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. ④ Pulse width ≤ 300μs; duty cycle≤ 2%. Copyright Vanguard Semiconductor Co., Ltd Rev C – SEP, 2018 www.vgsemi.com VS3618AE 30V/50A N-Channel Advanced Power MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig2. VGS(TH) Gate -Source Voltage Vs.Tj Normalized On Resistance ID, Drain-Source Current (A) Tc, Case Temperature (°C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj ID - Drain Current (A) Tj - Junction Temperature (°C) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Copyright Vanguard Semiconductor Co., Ltd Rev C – SEP, 2018 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.vgsemi.com VS3618AE 30V/50A N-Channel Advanced Power MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS , Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs.Drain-Source Voltage Qg -Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms Copyright Vanguard Semiconductor Co., Ltd Rev C – SEP, 2018 Fig11. Switching Time Test Circuit and waveforms www.vgsemi.com VS3618AE 30V/50A N-Channel Advanced Power MOSFET Marking Information Vs 3618AE XXXYWW 1st line： Vanguard Code（Vs） 2nd line：Part Number（3618AE） 3rd line：Date code （XXXYWW） XXX：Wafer Lot Number Y：Year Code，e.g. E means 2017 WW：Week Code Copyright Vanguard Semiconductor Co., Ltd Rev C – SEP, 2018 www.vgsemi.com VS3618AE 30V/50A N-Channel Advanced Power MOSFET PDFN3333 Package Outline Data Symbol DIMENSIONS ( unit : mm ) Min Typ Max A 0.7 0.75 0.8 Notes: b 0.25 0.3 0.35 1. Follow JEDEC MO-240 variation CA. C 0.1 0.15 0.25 2. Dimensions "D1" and "E1" do NOT include mold flash D 3.25 3.35 3.45 protrusions or gate burrs. D1 3 3.1 3.2 3. Dimensions "D1" and "E1" include interterminal flash or D2 1.78 1.88 1.98 protrusion. Interterminal flash or protrusion shall not exceed D3 -- 0.13 -- E 3.2 3.3 3.4 E1 3 3.15 3.2 E2 2.39 2.49 2.59 0.65 BSC e H 0.3 0.39 0.5 L 0.3 0.4 0.5 L1 -- 0.13 -- θ -- 10° 12° M * * 0.15 * Not specified Copyright Vanguard Semiconductor Co., Ltd Rev C – SEP, 2018 0.25mm per side. Customer Service Sales and Service: sales@vgsemi.com Vanguard Semiconductor CO., LTD TEL: (86-755) -26902410 FAX: (86-755) -26907027 WEB: www.vgsemi.com www.vgsemi.com