VS3622DE

VS3622DE 30V/35A Dual N-Channel Advanced Power MOSFET Features V DS 30 V  Dual N-Channel，5V Logic Level Control R DS(on),TYP@ VGS=10 V 10 mΩ  Enhancement mode R DS(on),TYP@ VGS=4.5 V 14 mΩ  Low on-resistance RDS(on) @ VGS=4.5 V ID 35 A  Fast Switching PDFN3333  100% Avalanche Tested  Pb-free lead plating; RoHS compliant  Part ID Package Type Marking VS3622DE PDFN3333 3622DE Tape and reel information 5000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① EAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG Storage temperature range Rating Unit 30 V TC =25°C 35 A TC =25°C 35 A TC =100°C 22 A TC =25°C 140 A 16 mJ 20 W ±20 V -55 to 150 °C Typical Unit TC =25°C Thermal Characteristics Symbol Parameter R JC Thermal Resistance-Junction to Case 6.2 °C/W R JA Thermal Resistance-Junction to Ambient 45 °C/W Copyright Vanguard Semiconductor Co., Ltd Rev A – NOV, 2017 www.vgsemi.com VS3622DE 30V/35A Dual N-Channel Advanced Power MOSFET Typical Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 -- -- V Zero Gate Voltage Drain Current(Tc=25℃) VDS=30V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tc=125℃) VDS=30V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.3 1.9 2.4 V RDS(ON) Drain-Source On-State Resistance ③ VGS=10V, ID=20A -- 10 13 mΩ RDS(ON) Drain-Source On-State Resistance ③ VGS=4.5V, ID=10A -- 14 18 mΩ 800 880 950 pF 120 140 160 pF 90 110 130 pF -- 3.5 -- Ω -- 19 -- nC -- 4.3 -- nC -- 6.5 -- nC -- 6 -- nS V(BR)DSS IDSS Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V,VGS=0V, f=1MHz f=1MHz VDS=15V,ID=20A, VGS=10V Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=20A, -- 5 -- nS t d(off) Turn-Off Delay Time RG=3Ω, -- 25 -- nS tf Turn-Off Fall Time -- 7 -- nS VDD=15V, VGS=10V Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated) VSD Forward on voltage ISD=20A,VGS=0V -- 0.9 1.2 V t rr Reverse Recovery Time Tj=25℃,Isd=20A, -- 7 -- nS Qrr Reverse Recovery Charge VGS=0V di/dt=500A/μs 6.3 nC NOTE: ① Repetitive rating; pulse width limited by max. junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 8A, VGS =10V. Part not recommended for use above this value ③ Pulse width ≤ 300μs; duty cycle≤ 2%. Copyright Vanguard Semiconductor Co., Ltd Rev A – NOV, 2017 www.vgsemi.com VS3622DE 30V/35A Dual N-Channel Advanced Power MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Fig2. Threshold Voltage Vs. Temperature Normalized On Resistance ID, Drain-Source Current (A) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Temperature ID - Drain Current (A) Tj - Junction Temperature (°C) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Copyright Vanguard Semiconductor Co., Ltd Rev A – NOV, 2017 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.vgsemi.com VS3622DE 30V/35A Dual N-Channel Advanced Power MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS , Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Transient Thermal Resistance r(t) , Normalized Effective Fig7. Typical Capacitance Vs.Drain-Source Voltage Qg -Total Gate Charge (nC) T1, Square Wave Pulse Duration(sec) Fig9. T1 ,Transient Thermal Response Curve Tj - Junction Temperature (°C) Fig9. Threshold Voltage Vs. Temperature Fig10. Unclamped Inductive Test Circuit and Fig11. Switching Time Test Circuit and waveforms waveforms Copyright Vanguard Semiconductor Co., Ltd Rev A – NOV, 2017 www.vgsemi.com VS3622DE 30V/35A Dual N-Channel Advanced Power MOSFET Dual PDFN3333 Package Outline Data Symbol Dimensions (unit: mm) Min Typ Max A 0.70 0.75 0.80 Notes: b 0.25 0.30 0.35 1. Refer to JEDEC MO-240 variation CA. c 0.10 0.15 0.25 2. Dimensions "D1" and "E1" do NOT include mold flash D 3.25 3.35 3.45 protrusions or gate burrs. D1 3.00 3.10 3.20 3. Dimensions "D1" and "E1" include interterminal flash or D2 1.78 1.88 1.98 protrusion. Interterminal flash or protrusion shall not exceed D3 -- 0.13 -- E 3.20 3.30 3.40 E1 3.00 3.15 3.20 E2 2.39 2.49 2.59 e 0.65 BSC H 0.30 0.39 0.50 L 0.30 0.40 0.50 L1 -- 0.13 -- K 0.30 -- -- θ -- 10° 12° M * * 0.15 0.25mm per side. Customer Service Sales and Service: sales@vgsemi.com Vanguard Semiconductor CO., LTD TEL: (86-755) -26902410 FAX: (86-755) -26907027 WEB: www.vgsemi.com * Not Specified Copyright Vanguard Semiconductor Co., Ltd Rev A – NOV, 2017 www.vgsemi.com