WPT2N32-6/TR

WPT2N32 WPT2N32 Http//:www.willsemi.com Single, PNP, -30V, -1A, Power Transistor with 20V N-MOSFET Descriptions The WPT2N32 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. DFN2x2-6L Standard Product WPT2N32 is Pb-free. 1 C E 2 B C 6 G 5 S 4 D Features  Ultra low collector-to-emitter saturation voltage  High DC current gain >100  1A continue collector current  Small package DFN2x2-6L 3 D Pin configuration (Top view) 6 5 4 2N32 YYWW 1 Applications  Charging circuit  Other power management in portable 2 3 2N32 = Device code YY = Year WW = Week Marking Order information equipments Will Semiconductor Ltd. 1 Device Package Shipping WPT2N32-6/TR DFN2x2-6L 3000/Reel&Tape Jul, 2012 - Rev.1.0 WPT2N32 Absolute maximum ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO -30 V Collector-base voltage VCBO -30 V VEBO -6 V IC -1 A ICM -3 A VDS 20 V VGS ±6 V 0.80 A 0.69 A 1.4 A 1.1 W 0.6 W PNP Transistor Emitter-base voltage Continues collector current Pulse collector current b c N-MOSFET Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Continuous Drain Current b ID c Pulsed Drain Current IDM Power Dissipation and temperature Power dissipation a Power dissipation PD b Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Operation Temperature TA -40 ~ 85 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Symbol Value Unit Junction-to-Ambient Thermal Resistance a RθJA 113 °C/W Junction-to-Ambient Thermal Resistance b RθJA 208 °C/W a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width=300µs, Duty Cycle