HSU0139

HSU0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSU0139 uses advanced trench MOSFET technology to provide excellent RDS(ON) and gate charge for use in a wide variety of other applications. The HSU0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. VDS -100 V RDS(ON),typ 42 mΩ ID -30 A TO252 Pin Configuration ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -30 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -19 A IDM Pulsed Drain Current2 -100 A EAS Single Pulse Avalanche Energy3 185 mJ IAS Avalanche Current -28 A PD@TC=25℃ Total Power Dissipation4 102 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 www.hs-smei.cn Ver 2.0 Typ. Max. Unit --- 62 ℃/W --- 1.2 ℃/W 1 HSU0139 P-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -100 --- --- V VGS=-10V , ID=-10A --- 42 50 VGS=-4.5V , ID=-8A --- 46 55 m Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.8 -2.5 V IDSS Drain-Source Leakage Current VDS=-100V , VGS=0V , TJ=25℃ --- --- -50 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-10A --- 32 --- S Qg Total Gate Charge --- 92 --- Qgs Gate-Source Charge --- 17.5 --- Qgd Gate-Drain Charge --- 14 --- Turn-On Delay Time --- 20.5 --- Td(on) Tr Td(off) Tf VDS=-80V , VGS=-10V , ID=-14A Rise Time VDD=-50V , VGS=-10V , RG=3.3, --- 32.2 --- Turn-Off Delay Time ID=-14A --- 123 --- nC ns Fall Time --- 63.7 --- Ciss Input Capacitance --- 6516 --- Coss Output Capacitance --- 223 --- Crss Reverse Transfer Capacitance --- 125 --- Min. Typ. Max. Unit VDS=-25V , VGS=0V , f=1MHz pF Diode Characteristics Symbol IS Parameter Conditions Continuous Source Current1,5 VG=VD=0V , Force Current --- --- -30 A VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=-14A , di/dt=-100A/µs , --- 31.2 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 31.97 --- nC Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=-25V,VGS=-10V,L=0.88mH,IAS=-28A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-smei.cn Ver 2.0 2 HSU0139 P-Ch 100V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Typical S-D Diode Forward Voltage Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ www.hs-smei.cn Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSU0139 P-Ch 100V Fast Switching MOSFETs Fig.7 Capacitance Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hs-smei.cn Fig.11 Unclamped Inductive Waveform Ver 2.0 4 HSU0139 P-Ch 100V Fast Switching MOSFETs Ordering Information Part Number HSU0139 www.hs-smei.cn Package code TO252-2 Ver 2.0 Packaging 2500/Tape&Reel 5