HSBB0012

HSBB0012 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSBB0012 is new generation MOSFET features low on-resistance and fast switching. Making it ideal for high efficiency power management applications. The HSBB0012 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ VDS 100 V RDS(ON),TYP 93 mΩ ID 20 A PRPAK3*3 Pin Configuration Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Optimized for fast-switching application Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 20 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 14 A IDM Pulsed Drain Current2 80 A EAS Single Pulse Avalanche Energy3 1.8 mJ PD@TC=25℃ Total Power Dissipation3 21 W PD@TA=25℃ Total Power Dissipation3 1.8 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-ambient 1 --- 65 ℃/W RθJC Thermal Resistance Junction-Case1 --- 6 ℃/W www.hs-semi.cn Ver 2.0 Typ. 1 HSBB0012 N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Conditions Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=5A --- 93 105 m VGS=4.5V , ID=5A --- 118 145 m 1.0 1.8 2.5 V --- -4.57 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 4 ---  Qg Total Gate Charge (10V) --- 5.4 --- Qgs Gate-Source Charge --- 3.1 --- Qgd Gate-Drain Charge --- 0.9 --- Turn-On Delay Time --- 5 --- Td(on) Tr Td(off) Tf Ciss VDS=50V , VGS=10V , ID=5A uA nC Rise Time VDD=50V , VGS=10V , RG=3 --- 3 --- Turn-Off Delay Time ID=10A --- 20 --- --- 5 --- --- 310 --- --- 20 --- --- 3.7 --- Min. Typ. Max. Unit --- --- 20 A --- --- 80 A --- --- 1.2 V --- 18 --- nS --- 48 --- nC Fall Time Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=50V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current1,5 ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSBB0012 N-Ch 100V Fast Switching MOSFETs Typical Characteristics Fig.2 Transfer CharacteristicsVoltage Fig.1 Typical Output Characteristics 10 IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse diode 2.5 Normalized On Resistance Normalized VGS(th) (V) 1.8 2.0 1.4 1.5 1 0.6 1.0 0.2 0.5 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 50 100 150 Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 TJ , Junction Temperature (℃) Ver 2.0 3 HSBB0012 N-Ch 100V Fast Switching MOSFETs 10000 100.00 F=1.0MHz 10us 100us 10.00 1ms 1000 ID (A) Capacitance (pF) Ciss 10ms 100ms 1.00 100 DC Coss 0.10 TC=25℃ Single Pulse Crss 10 0.01 1 5 9 13 17 21 25 0.1 1 10 VDS , Drain to Source Voltage (V) 100 1000 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform www.hs-semi.cn Ver 2.0 4 HSBB0012 N-Ch 100V Fast Switching MOSFETs Ordering Information Part Number HSBB0012 www.hs-semi.cn Package code PRPAK3*3 Ver 2.0 Packaging 3000/Tape&Reel 5